Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 12

Results: 20

Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 891, doi. 10.1134/S1063782621100237
By:
- Sobolev, N. A.;
- Kalyadin, A. E.;
- Shtel’makh, K. F.;
- Shek, E. I.
Publication type:
Article
Impact of (Pr, Dy) Co-doping at Bi Site on Optical and Multiferroic Properties of BiFeO3 Ceramics Prepared by Sonochemical Method.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 914, doi. 10.1134/S1063782621100298
By:
- Bismibanu, A.;
- Vanga, Pradeep Reddy;
- Alagar, M.;
- Selvalakshmi, Thangaraj;
- Banu, I. B. Shameem;
- Ashok, M.
Publication type:
Article
Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 899, doi. 10.1134/S1063782621100262
By:
- Utochkin, V. V.;
- Dubinov, A. A.;
- Fadeev, M. A.;
- Rumyantsev, V. V.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.;
- Gavrilenko, V. I.;
- Morozov, S. V.
Publication type:
Article
Silicon Metal–Oxide–Semiconductor Transistor with a Dependent Pocket Contact and Two-Layer Polysilicon Gate.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 885, doi. 10.1134/S1063782621100225
By:
- Shobolova, T. A.;
- Mokeev, A. S.;
- Rudakov, S. D.;
- Obolensky, S. V.;
- Shobolov, E. L.
Publication type:
Article
Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 895, doi. 10.1134/S1063782621100250
By:
- Tarasova, E. A.;
- Khazanova, S. V.;
- Golikov, O. L.;
- Puzanov, A. S.;
- Obolensky, S. V.;
- Zemlyakov, V. E.
Publication type:
Article
Calculation of the Temperature Dependence of the Coulomb-Acceptor State Energy in a Narrow-Gap HgCdTe Solid Solution.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 907, doi. 10.1134/S1063782621100286
By:
- Zholudev, M. S.;
- Rumyantsev, V. V.;
- Morozov, S. V.
Publication type:
Article
Features of the Damping and Amplification of Terahertz Plasmon Eigenmodes in Graphene Taking the Spatial Dispersion into Account.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 875, doi. 10.1134/S1063782621100195
By:
- Polischuk, O. V.;
- Fateev, D.V.;
- Popov, V. V.
Publication type:
Article
Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 903, doi. 10.1134/S1063782621100274
By:
- Volkova, E. V.;
- Loginov, A. B.;
- Loginov, B. A.;
- Tarasova, E. A.;
- Puzanov, A. S.;
- Korolev, S. A.;
- Semyonovykh, E. S.;
- Khazanova, S. V.;
- Obolensky, S. V.
Publication type:
Article
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 995, doi. 10.1134/S1063782621080170
By:
- Seredin, P. V.;
- Barkov, K. A.;
- Goloshchapov, D. L.;
- Lenshin, A. S.;
- Khudyakov, Yu. Yu.;
- Arsentiev, I. N.;
- Lebedev, A. A.;
- Sharofidinov, Sh. Sh.;
- Mizerov, A. M.;
- Kasatkin, I. A.;
- Prutskij, Tatiana
Publication type:
Article
Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 989, doi. 10.1134/S1063782621080169
By:
- Semakova, A. A.;
- Smirnov, A. M.;
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Pivovarova, A. A.;
- Chernyaev, A. V.;
- Kizhaev, S. S.;
- Stoyanov, N. D.
Publication type:
Article
Ag Doping Effects on the Microstructure, Morphology, Optical, and Luminescence Properties of Sol–Gel-Deposited ZnO Thin Films.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 976, doi. 10.1134/S1063782621080030
By:
- Atoui, M.;
- Benzeghda, S.;
- Touam, T.;
- Chelouche, A.;
- Djouadi, D.
Publication type:
Article
Ellipsometric Studies of the Optical Properties of Bi2Se3 and Bi2Se3〈Cu〉 Single Crystals.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 985, doi. 10.1134/S1063782621080091
By:
- Qudavasov, Sh. K.;
- Abdullayev, N. A.;
- Jalilli, J. N.;
- Badalova, Z. I.;
- Mamedova, I. A.;
- Nemov, S. A.
Publication type:
Article
Optical Properties of the Ge14Sb29Te57 and Ge15Sb15Te70 Phase-Change Materials in the Far-Infrared Range.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 968, doi. 10.1134/S1063782621070162
By:
- Ryzhov, V. A.;
- Melekh, B. T.;
- Kazakova, L. P.
Publication type:
Article
Microstructural and Electronic Properties of Rapid Thermally Grown MoS2|Silicon Hetero-Junctions with Various Process Parameters.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 948, doi. 10.1134/S1063782621060117
By:
- Pradhan, D.;
- Kar, J. P.
Publication type:
Article
Character of Interaction in the SnSb2Te4–SnBi2Te4 System and the Thermoelectric Properties of (SnSb2Te4)1 –x(SnBi2Te4)x Solid Solutions.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 943, doi. 10.1134/S1063782621060063
By:
- Gurbanov, G. R.;
- Adygezalova, M. B.
Publication type:
Article
Performance Evaluation of Inversion Mode and Junctionless Dual-Material Double-Surrounding Gate Si Nanotube MOSFET for 5-nm Gate Length.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 936, doi. 10.1134/S1063782621040151
By:
- Sanjay;
- Prasad, B.;
- Vohra, A.
Publication type:
Article
On the Band Gap of AgSbSe2.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 928, doi. 10.1134/S106378262104014X
By:
- Ragimov, S. S.;
- Bagiev, V. E.;
- Alieva, A. I.;
- Saddinova, A. A.
Publication type:
Article
Quantitative Analysis of Valley–Orbit Coupling in Germanium Doped with Group-V Donors.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 879, doi. 10.1134/S1063782621100201
By:
- Revin, A. A.;
- Mikhaylova, A. M.;
- Konakov, A. A.;
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Calculation of Lattice Thermal Conductivity for Si Fishbone Nanowire Using Modified Callaway Model.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 960, doi. 10.1134/S1063782621070137
By:
- Qader, I. N.;
- Qadr, H. M.;
- Ali, P. H.
Publication type:
Article
Effect of Absorber Layer Thickness on the Performance of Bismuth-Based Perovskite Solar Cells.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 922, doi. 10.1134/S1063782621040114
By:
- Obi, U. C.;
- Sanni, D. M.;
- Bello, A.
Publication type:
Article

Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 12

Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates.

Impact of (Pr, Dy) Co-doping at Bi Site on Optical and Multiferroic Properties of BiFeO<sub>3</sub> Ceramics Prepared by Sonochemical Method.

Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells.

Silicon Metal–Oxide–Semiconductor Transistor with a Dependent Pocket Contact and Two-Layer Polysilicon Gate.

Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs.

Calculation of the Temperature Dependence of the Coulomb-Acceptor State Energy in a Narrow-Gap HgCdTe Solid Solution.

Features of the Damping and Amplification of Terahertz Plasmon Eigenmodes in Graphene Taking the Spatial Dispersion into Account.

Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons.

Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer.

Ag Doping Effects on the Microstructure, Morphology, Optical, and Luminescence Properties of Sol–Gel-Deposited ZnO Thin Films.

Ellipsometric Studies of the Optical Properties of Bi<sub>2</sub>Se<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub>〈Cu〉 Single Crystals.

Optical Properties of the Ge<sub>14</sub>Sb<sub>29</sub>Te<sub>57</sub> and Ge<sub>15</sub>Sb<sub>15</sub>Te<sub>70</sub> Phase-Change Materials in the Far-Infrared Range.

Microstructural and Electronic Properties of Rapid Thermally Grown MoS<sub>2</sub>|Silicon Hetero-Junctions with Various Process Parameters.

Character of Interaction in the SnSb<sub>2</sub>Te<sub>4</sub>–SnBi<sub>2</sub>Te<sub>4</sub> System and the Thermoelectric Properties of (SnSb<sub>2</sub>Te<sub>4</sub>)<sub>1 –</sub><sub>x</sub>(SnBi<sub>2</sub>Te<sub>4</sub>)<sub>x</sub> Solid Solutions.

Performance Evaluation of Inversion Mode and Junctionless Dual-Material Double-Surrounding Gate Si Nanotube MOSFET for 5-nm Gate Length.

On the Band Gap of AgSbSe<sub>2</sub>.

Quantitative Analysis of Valley–Orbit Coupling in Germanium Doped with Group-V Donors.

Calculation of Lattice Thermal Conductivity for Si Fishbone Nanowire Using Modified Callaway Model.

Effect of Absorber Layer Thickness on the Performance of Bismuth-Based Perovskite Solar Cells.