Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 3
Results: 18
Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
- Published in:
- 2021
- By:
- Publication type:
- Correction Notice
High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 387, doi. 10.1134/S1063782621030180
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- Publication type:
- Article
Electrodeposition of Metals on p-Si from Aqueous Electrolytes.
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- Semiconductors, 2021, v. 55, n. 3, p. 384, doi. 10.1134/S1063782621030064
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- Publication type:
- Article
Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 379, doi. 10.1134/S1063782621030076
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- Publication type:
- Article
Modeling and Simulation of High-Efficiency Eco-Friendly Perovskite-CZTSe1 –xSx Solar Cell.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 373, doi. 10.1134/S1063782621030088
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- Publication type:
- Article
Evolution of Electron Transport under Resistive Switching in Porphyrazine Films.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 296, doi. 10.1134/S1063782621030052
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- Publication type:
- Article
Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179
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- Publication type:
- Article
Deposition of CZTS|ZnO Hetero-Junction Using SILAR and Spray Pyrolysis.
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- Semiconductors, 2021, v. 55, n. 3, p. 363, doi. 10.1134/S106378262103009X
- By:
- Publication type:
- Article
Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 354, doi. 10.1134/S1063782621030155
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- Publication type:
- Article
Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation.
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- Semiconductors, 2021, v. 55, n. 3, p. 341, doi. 10.1134/S1063782621030118
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- Publication type:
- Article
TlGaN Quantum-Dot Photodetectors.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 359, doi. 10.1134/S1063782621030039
- By:
- Publication type:
- Article
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167
- By:
- Publication type:
- Article
On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 328, doi. 10.1134/S1063782621030040
- By:
- Publication type:
- Article
Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures.
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- Semiconductors, 2021, v. 55, n. 3, p. 346, doi. 10.1134/S1063782621030027
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- Publication type:
- Article
Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 308, doi. 10.1134/S106378262103012X
- By:
- Publication type:
- Article
Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 301, doi. 10.1134/S1063782621030131
- By:
- Publication type:
- Article
Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 319, doi. 10.1134/S1063782621030143
- By:
- Publication type:
- Article
Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots.
- Published in:
- Semiconductors, 2021, v. 55, n. 3, p. 315, doi. 10.1134/S1063782621030106
- By:
- Publication type:
- Article