Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 3

Results: 18

Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 341, doi. 10.1134/S1063782621030118

By:

Kalygina, V. M.;
Tsymbalov, A. V.;
Almaev, A. V.;
Petrova, Yu. S.

Publication type:

Article

High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 387, doi. 10.1134/S1063782621030180

By:

Zhang, X.-M.;
Yan, C.-L.;
Yu, G.-H.;
Zeng, C.-H.;
Sun, T.-Y.;
Xing, Z.;
Wang, Y.-Q.;
Yang, J.-H.;
Zhang, B.-S.

Publication type:

Article

Electrodeposition of Metals on p-Si from Aqueous Electrolytes.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 384, doi. 10.1134/S1063782621030064

By:

Goriaeva, V. N.;
Bisengaliev, R. A.

Publication type:

Article

Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 346, doi. 10.1134/S1063782621030027

By:

Almaev, A. V.;
Nikolaev, V. I.;
Stepanov, S. I.;
Yakovlev, N. N.;
Pechnikov, A. I.;
Chernikov, E. V.;
Kushnarev, B. O.

Publication type:

Article

Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 354, doi. 10.1134/S1063782621030155

By:

Semakova, A. A.;
Romanov, V. V.;
Bazhenov, N. L.;
Mynbaev, K. D.;
Moiseev, K. D.

Publication type:

Article

Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.

Published in:

2021

By:

Strel'chuk, A. M.;
Lebedev, A. A.;
Bulat, P. V.

Publication type:

Correction Notice

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179

By:

Tyschenko, I. E.;
Voelskow, M.;
Si, Zh.;
Popov, V. P.

Publication type:

Article

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 379, doi. 10.1134/S1063782621030076

By:

Jabli, F.;
Dhouibi, S.;
Gassoumi, M.

Publication type:

Article

Modeling and Simulation of High-Efficiency Eco-Friendly Perovskite-CZTSe1 –xSx Solar Cell.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 373, doi. 10.1134/S1063782621030088

By:

Jalalian, D.;
Ghadimi, A.;
Kaleh, A. K. Sar

Publication type:

Article

Deposition of CZTS|ZnO Hetero-Junction Using SILAR and Spray Pyrolysis.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 363, doi. 10.1134/S106378262103009X

By:

Jayakrishnan, R.;
Raj, A.;
Nair, V. G.

Publication type:

Article

TlGaN Quantum-Dot Photodetectors.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 359, doi. 10.1134/S1063782621030039

By:

Al-Shatravi, A. G.;
Hassan, H.;
Abdulalmuhsin, S. M.;
Al-Khursan, A. H.

Publication type:

Article

Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167

By:

Shernyakov, Yu. M.;
Gordeev, N. Yu.;
Payusov, A. S.;
Serin, A. A.;
Kornyshov, G. O.;
Nadtochiy, A. M.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 328, doi. 10.1134/S1063782621030040

By:

Breev, I. D.;
Yakovleva, V. D.;
Kudryavtsev, O. S.;
Baranov, P. G.;
Mokhov, E. N.;
Anisimov, A. N.

Publication type:

Article

Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 319, doi. 10.1134/S1063782621030143

By:

Orlov, M. L.;
Orlov, L. K.

Publication type:

Article

Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 315, doi. 10.1134/S1063782621030106

By:

Kabanov, V. F.;
Mikhailov, A. I.;
Gavrikov, M. V.

Publication type:

Article

Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 308, doi. 10.1134/S106378262103012X

By:

Kostishin, V. G.;
Mironovich, A. Yu.;
Timofeev, A. V.;
Isaev, I. M.;
Shakirzyanov, R. I.;
Ril, A. I.;
Sergienko, A. A.

Publication type:

Article

Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 301, doi. 10.1134/S1063782621030131

By:

Malek, S.;
Pajouh, H. Hakimi

Publication type:

Article

Evolution of Electron Transport under Resistive Switching in Porphyrazine Films.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 296, doi. 10.1134/S1063782621030052

By:

Drozdov, K. A.;
Krylov, I. V.;
Vasilik, V. A.;
Kosov, A. D.;
Dubinina, T. V.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article