Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 1
Results: 31
Dependence of ZnCl<sub>2</sub> Precursor Concentrations on Structural, Optical, and Cathodoluminescence Properties of Spin-Coated ZnO Thin Films.
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- Semiconductors, 2021, v. 55, n. 1, p. S80, doi. 10.1134/S1063782621100109
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Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films.
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- Semiconductors, 2021, v. 55, n. 1, p. S72, doi. 10.1134/S1063782621100055
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Saturation Power of a Semiconductor Optical Amplifier Based on Self-Organized Quantum Dots.
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- Semiconductors, 2021, v. 55, n. 1, p. S67, doi. 10.1134/S1063782621090256
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Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy.
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- Semiconductors, 2021, v. 55, n. 1, p. S62, doi. 10.1134/S1063782621090220
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Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes.
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- Semiconductors, 2021, v. 55, n. 1, p. S54, doi. 10.1134/S1063782621090086
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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells.
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- Semiconductors, 2021, v. 55, n. 1, p. S49, doi. 10.1134/S1063782621090074
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Two-Dimensional Electron-Hole System under the Influence of the Chern–Simons Gauge Field Created by the Quantum Point Vortices.
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- Semiconductors, 2021, v. 55, n. 1, p. S35, doi. 10.1134/S1063782621080145
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Amplification of Terahertz Electromagnetic Waves in a Structure with Two Graphene Layers under a Direct Electric Current Flow: a Hydrodynamic Approximation.
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- Semiconductors, 2021, v. 55, n. 1, p. S30, doi. 10.1134/S1063782621080133
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I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters.
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- Semiconductors, 2021, v. 55, n. 1, p. S22, doi. 10.1134/S1063782621060142
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RF Performance Investigation of NiO Pocket on Ga<sub>2</sub>O<sub>3</sub>-Based Hetero-MOSFET.
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- Semiconductors, 2021, v. 55, n. 1, p. S14, doi. 10.1134/S1063782621050171
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Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping.
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- Semiconductors, 2021, v. 55, n. 1, p. S8, doi. 10.1134/S1063782621050158
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Surface Morphology and Optical Properties of Glassy Selenium Films after Laser Modification.
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- Semiconductors, 2021, v. 55, n. 1, p. S1, doi. 10.1134/S1063782621050031
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon.
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- Semiconductors, 2021, v. 55, n. 1, p. 122, doi. 10.1134/S1063782621010140
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Device Performance Optimization of Organic Thin-Film Transistors at Short-Channel Lengths Using Vertical Channel Engineering Techniques.
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- Semiconductors, 2021, v. 55, n. 1, p. 116, doi. 10.1134/S1063782621010024
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Effect of Total Ionizing Dose Damage on 8-Transistor CMOS Star Sensor Performance.
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- Semiconductors, 2021, v. 55, n. 1, p. 108, doi. 10.1134/S1063782621010073
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Silicon Nanowire Parameter Extraction Using DFT and Comparative Performance Analysis of SiNWFET and CNTFET Devices.
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- Semiconductors, 2021, v. 55, n. 1, p. 100, doi. 10.1134/S1063782621010152
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High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic.
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- Semiconductors, 2021, v. 55, n. 1, p. 92, doi. 10.1134/S1063782621010164
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Effect of Electron–Phonon Interaction and γ-Ray Irradiation on the Reverse Currents of Silicon Photodiodes.
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- Semiconductors, 2021, v. 55, n. 1, p. 86, doi. 10.1134/S1063782621010048
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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices.
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- Semiconductors, 2021, v. 55, n. 1, p. 76, doi. 10.1134/S1063782621010188
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Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition.
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- Semiconductors, 2021, v. 55, n. 1, p. 66, doi. 10.1134/S106378262101019X
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Quantum-Confinement Effect in Silicon Nanocrystals during Their Dissolution in Model Biological Fluids.
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- Semiconductors, 2021, v. 55, n. 1, p. 61, doi. 10.1134/S1063782621010097
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Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique.
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- Semiconductors, 2021, v. 55, n. 1, p. 56, doi. 10.1134/S106378262101005X
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Frequency Dependent Capacitance and Conductance–Voltage Characteristics of Nitride GaAs Schottky Diode.
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- Semiconductors, 2021, v. 55, n. 1, p. 51, doi. 10.1134/S1063782621010206
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Spectroscopic Studies of Integrated GaAs/Si Heterostructures.
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- Semiconductors, 2021, v. 55, n. 1, p. 44, doi. 10.1134/S1063782621010139
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Spray Pyrolysis Synthesized and ZnO–NiO Nanostructured Thin Films Analysis with Their Nanocomposites for Waveguiding Applications.
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- Semiconductors, 2021, v. 55, n. 1, p. 37, doi. 10.1134/S1063782621010085
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Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering.
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- Semiconductors, 2021, v. 55, n. 1, p. 28, doi. 10.1134/S1063782621010115
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Thin-Film Baroresistors Based on Sm1 –xGdxS Solid Solutions.
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- Semiconductors, 2021, v. 55, n. 1, p. 25, doi. 10.1134/S1063782621010103
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Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages.
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- Semiconductors, 2021, v. 55, n. 1, p. 21, doi. 10.1134/S1063782621010036
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Room-Temperature Observation of Local and Nonlocal Electronic Quantum States on the Surface of Silicon.
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- Semiconductors, 2021, v. 55, n. 1, p. 14, doi. 10.1134/S1063782621010176
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Arsenic Doping Upon the Deposition of CdTe Layers from Dimethylcadmium and Diisopropyltellurium.
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- Semiconductors, 2021, v. 55, n. 1, p. 7, doi. 10.1134/S1063782621010061
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Local Structure and Anti-Structural Defects of Tin in Amorphous and Crystalline Ge2Sb2Te5 Films.
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- Semiconductors, 2021, v. 55, n. 1, p. 1, doi. 10.1134/S1063782621010127
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