Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 11

Results: 26

Manganese-Doped ZnS QDs: an Investigation into the Optimal Amount of Doping.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1450, doi. 10.1134/S106378262011024X

By:

Tomar, S.;
Gupta, S.;
Mukherjee, S.;
Singh, A.;
Kumar, S.;
Choubey, R. K.

Publication type:

Article

Growth and Characterization of ZnO and Al-Doped ZnO Thin Films by a Homemade Spray Pyrolysis.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1439, doi. 10.1134/S1063782620110184

By:

Larbah, Y.;
Adnane, M.;
Rahal, B.

Publication type:

Article

Energy Spectrum in a Shallow GaAs/AlGaAs Quantum Well Probed by Spectroscopy of Nonradiative Broadening of Exciton Resonances.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1514, doi. 10.1134/S1063782620110172

By:

Kurdyubov, A. S.;
Gribakin, B. F.;
Mikhailov, A. V.;
Trifonov, A. V.;
Efimov, Yu. P.;
Eliseev, S. A.;
Lovtcius, V. A.;
Ignatiev, I. V.

Publication type:

Article

Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers MoxW1–xSe2/WSe2.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1518, doi. 10.1134/S1063782620110196

By:

Liubomirov, A. D.;
Kravtsov, V.;
Cherbunin, R. V.

Publication type:

Article

Optical Parameters of Both As2S3 and As2Se3 Thin Films from Ultraviolet to the Near-Infrared via Variable-Angle Spectroscopic Ellipsometer.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1430, doi. 10.1134/S1063782620110020

By:

Abdel-Wahab, F.;
Ashraf, I. M.;
Ahmed, F. B. M.

Publication type:

Article

Thermodynamics of the Ideal Two-Dimensional Magnetoexciton Gas with Linear Dispersion Law.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1522, doi. 10.1134/S1063782620110202

By:

Moskalenko, S. A.;
Podlesny, I. V.;
Zubac, I. A.;
Novikov, B. V.

Publication type:

Article

Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1483, doi. 10.1134/S106378262011010X

By:

Jain, S. K.;
Joshi, A. M.;
Bharti, D.

Publication type:

Article

Synthesis of Silicon-Carbide Nanoparticles by the Laser Pyrolysis of a Mixture of Monosilane and Acetylene.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1467, doi. 10.1134/S1063782620110081

By:

Ershov, I. A.;
Iskhakova, L. D.;
Krasovskii, V. I.;
Milovich, F. O.;
Rasmagin, S. I.;
Pustovoi, V. I.

Publication type:

Article

Polarization Conversion in MoS2 Flakes.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1509, doi. 10.1134/S1063782620110160

By:

Kotova, L. V.;
Platonov, A. V.;
Poshakinskiy, A. V.;
Shubina, T. V.

Publication type:

Article

Coupling of Quantum-Well Excitons to Plasmons in One-Dimensional Metal Nanocylinder Gratings.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1506, doi. 10.1134/S1063782620110159

By:

Korotchenkov, A. V.

Publication type:

Article

Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1503, doi. 10.1134/S1063782620110135

By:

Khramtsov, E. S.;
Gribakin, B. F.;
Trifonov, A. V.;
Ignatiev, I. V.

Publication type:

Article

Two-Stage Synthesis of Structured Microsystems Based on Zinc-Oxide Nanorods by Ultrasonic Spray Pyrolysis and the Low-Temperature Hydrothermal Method.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1496, doi. 10.1134/S1063782620110238

By:

Ryabko, A. A.;
Maximov, A. I.;
Verbitskii, V. N.;
Levitskii, V. S.;
Moshnikov, V. A.;
Terukov, E. I.

Publication type:

Article

Dual Material Gate Engineering to Reduce DIBL in Cylindrical Gate All Around Si Nanowire MOSFET for 7-nm Gate Length.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1490, doi. 10.1134/S1063782620110111

By:

Sanjay;
Prasad, B.;
Vohra, Anil

Publication type:

Article

Comparison of the Bulk and Surface Properties of InBV–ZnS Semiconductor Solid Solutions.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1459, doi. 10.1134/S1063782620110147

By:

Kirovskaya, I. A.;
Ekkert, R. V.;
Umansky, I. Yu.;
Ekkert, A. O.;
Kropotin, O. V.

Publication type:

Article

Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1478, doi. 10.1134/S1063782620110123

By:

Kalinina, E. V.;
Kudoyarov, M. F.;
Nikitina, I. P.;
Ivanova, E. V.;
Zabrodskii, V. V.

Publication type:

Article

Influence of the Surface Morphology of the Microwave Microstrip Line on Its Transmission Performance.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1472, doi. 10.1134/S1063782620110251

By:

Torkhov, N. A.;
Kokolov, A. A.;
Babak, L. I.

Publication type:

Article

Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1445, doi. 10.1134/S1063782620110032

By:

Afanasiev, M. S.;
Belorusov, D. A.;
Kiselev, D. A.;
Sivov, A. A.;
Chucheva, G. V.

Publication type:

Article

Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1417, doi. 10.1134/S1063782620110093

By:

Galiev, G. B.;
Klimov, E. A.;
Pushkarev, S. S.;
Zaytsev, A. A.;
Klochkov, A. N.

Publication type:

Article

Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1406, doi. 10.1134/S1063782620110044

By:

Alekperov, A. S.;
Dashdemirov, A. O.;
Ismayilova, N. A.;
Jabarov, S. H.

Publication type:

Article

Two- and Three-Photon Linear-Circular Dichroism in Cubic-Symmetry Semiconductors.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1381, doi. 10.1134/S1063782620110226

By:

Rasulov, V. R.;
Rasulov, R. Ya.;
Sultonov, R. R.;
Akhmedov, B. B.

Publication type:

Article

Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111).

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1424, doi. 10.1134/S1063782620110263

By:

Umirzakov, B. E.;
Tashmukhamedova, D. A.;
Tashatov, A. K.;
Mustafoeva, N. M.;
Muradkabilov, D. M.

Publication type:

Article

Adsorption of Group-I and -VII Atoms on Silicon-Carbide Polytypes.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1410, doi. 10.1134/S1063782620110275

By:

Davydov, S. Yu.;
Posrednik, O. V.

Publication type:

Article

Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1398, doi. 10.1134/S1063782620110214

By:

Rabehi, A.;
Nail, B.;
Helal, H.;
Douara, A.;
Ziane, A.;
Amrani, M.;
Akkal, B.;
Benamara, Z.

Publication type:

Article

Resonance Light Scattering by Optical Phonons in Diamond Crystal with Nitogen-Vacancy Centres.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1395, doi. 10.1134/S1063782620110056

By:

Bairamov, B. H.;
Toropov, V. V.;
Bairamov, F. B.

Publication type:

Article

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1388, doi. 10.1134/S106378262011007X

By:

Emtsev, V. V.;
Oganesyan, G. A.

Publication type:

Article

Estimates of the Elastic, Dielectric, and Optical Characteristics of a Cubic BAs Single Crystal.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1377, doi. 10.1134/S1063782620110068

By:

Davydov, S. Yu.

Publication type:

Article