Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 10

Results: 32

Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1371, doi. 10.1134/S1063782620100322
By:
- Utochkin, V. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Gavrilenko, V. I.;
- Kulikov, N. S.;
- Fadeev, M. A.;
- Rumyantsev, V. V.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.;
- Razova, A. A.;
- Morozov, S. V.
Publication type:
Article
Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1365, doi. 10.1134/S106378262010019X
By:
- Kushkov, L. A.;
- Utochkin, V.V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Kudryavtsev, K. E.;
- Gavrilenko, V. I.;
- Kulikov, N. S.;
- Fadeev, M. A.;
- Rumyantsev, V. V.;
- Mikhailov, N. N.;
- Dvoretskii, S. A.;
- Razova, A. A.;
- Morozov, S. V.
Publication type:
Article
Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1360, doi. 10.1134/S1063782620100073
By:
- Dyukov, D. I.;
- Fefelov, A. G.;
- Korotkov, A. V.;
- Pavelyev, D. G.;
- Kozlov, V. A.;
- Obolenskaya, E. S.;
- Ivanov, A. S.;
- Obolensky, S. V.
Publication type:
Article
Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1352, doi. 10.1134/S1063782620100334
By:
- Yablonskiy, A. N.;
- Novikov, A. V.;
- Stepikhova, M. V.;
- Sergeev, S. M.;
- Baidakova, N. A.;
- Shaleev, M. V.;
- Krasilnik, Z. F.
Publication type:
Article
Relaxation of the Excited States of Arsenic in Strained Germanium.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188
By:
- Kovalevsky, K. A.;
- Choporova, Yu. Yu.;
- Zhukavin, R. Kh.;
- Abrosimov, N. V.;
- Pavlov, S. G.;
- Hübers, H.-W.;
- Tsyplenkov, V. V.;
- Kukotenko, V. D.;
- Knyazev, B. A.;
- Shastin, V. N.
Publication type:
Article
Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1341, doi. 10.1134/S1063782620100061
By:
- Dorokhin, M. V.;
- Demina, P. B.;
- Danilov, Yu. A.;
- Vikhrova, O. V.;
- Kuznetsov, Yu. M.;
- Ved', M. V.;
- Iikawa, F.;
- Balanta, M. A. G.
Publication type:
Article
Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure 28Si1 –x72Gex Alloys.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1336, doi. 10.1134/S1063782620100097
By:
- Ezhevskii, A. A.;
- Sennikov, P. G.;
- Guseinov, D. V.;
- Soukhorukov, A. V.;
- Kalinina, E. A.;
- Abrosimov, N. V.
Publication type:
Article
Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1332, doi. 10.1134/S1063782620100309
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Kryukov, R. N.;
- Pitirimova, E. A.
Publication type:
Article
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Matyushenko, E. V.;
- Neizvestny, I. G.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Epov, V.S.
Publication type:
Article
Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1320, doi. 10.1134/S1063782620100267
By:
- Sibirev, N. V.;
- Berdnikov, Yu. S.;
- Sibirev, V. N.
Publication type:
Article
Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1315, doi. 10.1134/S1063782620100292
By:
- Sreseli, O. M.;
- Elistratova, M. A.;
- Goryachev, D. N.;
- Beregulin, E. V.;
- Nevedomskii, V. N.;
- Bert, N. A.;
- Ershov, A. V.
Publication type:
Article
Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1310, doi. 10.1134/S1063782620100218
By:
- Markov, L. K.;
- Smirnova, I. P.;
- Kukushkin, M. V.;
- Pavluchenko, A. S.
Publication type:
Article
Physicochemical Interactions in the GeSb2Te4–PbSb2Te4 System.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1304, doi. 10.1134/S1063782620100139
By:
- Gurbanov, G. R.;
- Adygezalova, M. B.
Publication type:
Article
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1296, doi. 10.1134/S1063782620100127
By:
- Gassoumi, M.
Publication type:
Article
Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1290, doi. 10.1134/S1063782620100243
By:
- Ramesh, L.;
- Moparthi, S.;
- Tiwari, P. K.;
- Samoju, V. R.;
- Saramekala, G. K.
Publication type:
Article
Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1284, doi. 10.1134/S106378262010005X
By:
- Dalapati, P.;
- Manik, N. B.;
- Basu, A. N.
Publication type:
Article
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048
By:
- Blokhin, S. A.;
- Nevedomsky, S. N.;
- Bobrov, M. A.;
- Maleev, N. A.;
- Blokhin, A. A.;
- Kuzmenkov, A. G.;
- Vasyl'ev, A. P.;
- Rohas, S. S.;
- Babichev, A. V.;
- Gladyshev, A. G.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Ionov, A. S.;
- Egorov, A. Yu.;
- Ustinov, V. M.
Publication type:
Article
Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255
By:
- Salii, R. A.;
- Mintairov, S. A.;
- Nadtochiy, A. M.;
- Nevedomskii, V. N.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1260, doi. 10.1134/S1063782620100280
By:
- Sobolev, M. M.;
- Soldatenkov, F. Y.
Publication type:
Article
External Quantum Efficiency of Bifacial HIT Solar Cells.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1254, doi. 10.1134/S1063782620100085
By:
- Ermachikhin, A. V.;
- Vorobyov, Yu. V.;
- Maslov, A. D.;
- Trusov, E. P.;
- Litvinov, V. G.
Publication type:
Article
Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036
By:
- Aleksandrov, O. V.
Publication type:
Article
Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1241, doi. 10.1134/S1063782620100140
By:
- Isayev, A. I.;
- Mammadova, H. I.;
- Mekhtiyeva, S. I.;
- Alekberov, R. I.
Publication type:
Article
Structure, Optical, and Photoelectric Properties of Lead-Sulfide Films Doped with Strontium and Barium.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1230, doi. 10.1134/S1063782620100231
By:
- Maskaeva, L. N.;
- Mostovshchikova, E. V.;
- Voronin, V. I.;
- Lekomtseva, E. E.;
- Bogatova, P. S.;
- Markov, V. F.
Publication type:
Article
Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1224, doi. 10.1134/S1063782620100152
By:
- Kalygina, V. M.;
- Nikolaev, V. I.;
- Almaev, A. V.;
- Tsymbalov, A. V.;
- Kopyev, V. V.;
- Petrova, Y. S.;
- Pechnikov, I. A.;
- Butenko, P. N.
Publication type:
Article
Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1220, doi. 10.1134/S1063782620100103
By:
- Farhat, O. F.;
- Hisham, M.;
- Bououdina, M.;
- Oglat, Ammar A.;
- Mohammed, Nyan J.
Publication type:
Article
Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1247, doi. 10.1134/S1063782620100310
By:
- Svitsiankou, I. E.;
- Pavlovskii, V. N.;
- Muravitskaya, E. V.;
- Lutsenko, E. V.;
- Yablonskii, G. P.;
- Borodavchenko, O. M.;
- Zhivulko, V. D.;
- Mudry, A. V.;
- Yakushev, M. V.;
- Kognovitckii, S. O.
Publication type:
Article
Electron-Population Bragg Grating Induced in an AlxGa1 –xAs–GaAs–AlxGa1 –xAs Heterostructure by Intrinsic Stimulated Picosecond Emission.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1205, doi. 10.1134/S1063782620100024
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Zabegaev, D. N.;
- Krivonosov, A. N.
Publication type:
Article
Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1198, doi. 10.1134/S1063782620100176
By:
- Komkov, O. S.;
- Khakhulin, S. A.;
- Firsov, D. D.;
- Avdienko, P. S.;
- Sedova, I. V.;
- Sorokin, S. V.
Publication type:
Article
Structure and Photoelectric Properties of PbSe Films Deposited in the Presence of Ascorbic Acid.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1191, doi. 10.1134/S106378262010022X
By:
- Maskaeva, L. N.;
- Yurk, V. M.;
- Markov, V. F.;
- Kuznetsov, M. V.;
- Voronin, V. I.;
- Lipina, O. A.
Publication type:
Article
Elastic and Thermal Properties of Orthorhombic and Tetragonal Phases of Cu2ZnSiSe4 by First Principles Calculations.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1185, doi. 10.1134/S1063782620100115
By:
- Yan Li Gao;
- Wen Shui Guan;
- Yu Jing Dong
Publication type:
Article
Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe2 Single Crystals under Hydrostatic Pressure.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1180, doi. 10.1134/S1063782620100206
By:
- Madatov, R. S.;
- Gasimov, Sh. G.;
- Babayev, S. S.;
- Alekperov, A. S.;
- Movsumova, I. M.;
- Jabarov, S. H.
Publication type:
Article
Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1171, doi. 10.1134/S1063782620100279
By:
- Skipetrov, E. P.;
- Kovalev, B. B.;
- Shevchenko, I. V.;
- Knotko, A. V.;
- Slynko, V. E.
Publication type:
Article