Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 9

Results: 31

Diffraction-Mode Selection in Heterolasers with Planar Bragg Structures.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1161, doi. 10.1134/S1063782620090122

By:

Ginzburg, N. S.;
Sergeev, A. S.;
Kocharovskaya, E. R.;
Malkin, A. M.;
Egorova, E. D.;
Zaslavsky, V. Yu.

Publication type:

Article

Coherent Spin Dynamics of a Two-Dimensional Electron Gas in the Mode of a Hall Ferromagnet.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1166, doi. 10.1134/S1063782620090171

By:

Larionov, A. V.;
Stepanets-Khussein, E.;
Kulik, L. V.

Publication type:

Article

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1155, doi. 10.1134/S1063782620090274

By:

Tarasova, E. A.;
Obolensky, S. V.;
Khazanova, S. V.;
Grigoryeva, N. N.;
Golikov, O. L.;
Ivanov, A. B.;
Puzanov, A. S.

Publication type:

Article

Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1150, doi. 10.1134/S1063782620090067

By:

Chumakov, N. K.;
Chernykh, I. A.;
Davydov, A. B.;
Ezubchenko, I. S.;
Grishchenko, Yu. V.;
Lev, L. L.;
Maiboroda, I. O.;
Morgun, L. A.;
Strocov, V. N.;
Valeyev, V. G.;
Zanaveskin, M. L.

Publication type:

Article

Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1141, doi. 10.1134/S1063782620090158

By:

Khrebtov, A. I.;
Kulagina, A. S.;
Danilov, V. V.;
Gromova, E. S.;
Skurlov, I. D.;
Litvin, A. P.;
Reznik, R. R.;
Shtrom, I. V.;
Cirlin, G. E.

Publication type:

Article

Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1147, doi. 10.1134/S1063782620090080

By:

Drozdov, Yu. N.;
Kraev, S. A.;
Okhapkin, A. I.;
Daniltsev, V. M.;
Skorokhodov, E. V.

Publication type:

Article

Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1134, doi. 10.1134/S1063782620090328

By:

Zabavichev, I. Yu.;
Puzanov, A. S.;
Obolenskiy, S. V.;
Kozlov, V. A.

Publication type:

Article

Optical and Transport Properties of Epitaxial Pb0.74Sn0.26Te(In) Films with a Modifiable Surface.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1086, doi. 10.1134/S1063782620090134

By:

Ikonnikov, A. V.;
Dudin, V. S.;
Artamkin, A. I.;
Akimov, A. N.;
Klimov, A. E.;
Tereshchenko, O. E.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article

Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1051, doi. 10.1134/S1063782620090146

By:

Kaveev, A. K.;
Banshchikov, A. G.;
Terpitskiy, A. N.;
Golyashov, V. A.;
Tereshchenko, O. E.;
Kokh, K. A.;
Estyunin, D. A.;
Shikin, A. M.

Publication type:

Article

Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic 28Si1 – x72Gex Alloys.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1123, doi. 10.1134/S1063782620090092

By:

Ezhevskii, A. A.;
Sennikov, P. G.;
Guseinov, D. V.;
Soukhorukov, A. V.;
Kalinina, E. A.;
Abrosimov, N. V.

Publication type:

Article

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304

By:

Utochkin, V. V.;
Fadeev, M. A.;
Krishtopenko, S. S.;
Rumyantsev, V. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Morozov, S. V.;
Semyagin, B. R.;
Putyato, M. A.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gavrilenko, V. I.

Publication type:

Article

Influence of Uniaxial Deformation along the [110] Direction on the Relaxation of Arsenic Shallow Donor States in Germanium.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1108, doi. 10.1134/S1063782620090286

By:

Tsyplenkov, V. V.;
Shastin, V. N.

Publication type:

Article

Electron States of Group-V Donors in Germanium: Variational Calculation Taking into Account the Short-Range Potential.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1127, doi. 10.1134/S1063782620090225

By:

Revin, A. A.;
Mikhaylova, A. M.;
Konakov, A. A.;
Shastin, V. N.

Publication type:

Article

Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1047, doi. 10.1134/S1063782620090316

By:

Yunin, P. A.;
Okhapkin, A. I.;
Drozdov, M. N.;
Korolev, S. A.;
Arkhipova, E. A.;
Kraev, S. A.;
Drozdov, Yu. N.;
Shashkin, V. I.;
Radishev, D. B.

Publication type:

Article

Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1096, doi. 10.1134/S1063782620090249

By:

Rumyantsev, V. V.;
Maremyanin, K. V.;
Razova, A. A.;
Sergeev, S. M.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Gavrilenko, V. I.;
Morozov, S. V.

Publication type:

Article

Multiphonon Relaxation of the 1s(T2) States of a Singly Ionized Selenium Donor in Silicon.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1112, doi. 10.1134/S1063782620090043

By:

Bekin, N. A.

Publication type:

Article

Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1092, doi. 10.1134/S1063782620090298

By:

Cirlin, G. E.;
Reznik, R. R.;
Zhukov, A. E.;
Khabibullin, R. A.;
Maremyanin, K. V.;
Gavrilenko, V. I.;
Morozov, S. V.

Publication type:

Article

Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1103, doi. 10.1134/S1063782620090250

By:

Shvetsov, B. S.;
Minnekhanov, A. A.;
Nesmelov, A. A.;
Martyshov, M. N.;
Rylkov, V. V.;
Demin, V. A.;
Emelyanov, A. V.

Publication type:

Article

Effect of the Boundary Conditions on the High-Frequency Electrical Conductivity of a Thin Conducting Layer in a Longitudinal Magnetic Field.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1039, doi. 10.1134/S106378262009016X

By:

Kuznetsova, I. V.;
Savenko, O. V.;
Kuznetsov, P. A.

Publication type:

Article

Effect of Submicron Structural Parameters on the Performance of a Multi-Diode CMOS Compatible Silicon Avalanche Photodetector.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1032, doi. 10.1134/S1063782620090183

By:

Majumder, K.;
Rakshit, P.;
Das, N. Ranjan

Publication type:

Article

Terahertz Dispersion and Amplification under Electron Streaming in Graphene at 300 K.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1078, doi. 10.1134/S106378262009002X

By:

Andronov, A. A.;
Pozdniakova, V. I.

Publication type:

Article

Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1075, doi. 10.1134/S1063782620090237

By:

Reznik, R. R.;
Gridchin, V. O.;
Kotlyar, K. P.;
Kryzhanovskaya, N. V.;
Morozov, S. V.;
Cirlin, G. E.

Publication type:

Article

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1069, doi. 10.1134/S1063782620090195

By:

Maremyanin, K. V.;
Parshin, V. V.;
Serov, E. A.;
Rumyantsev, V. V.;
Kudryavtsev, K. E.;
Dubinov, A. A.;
Fokin, A. P.;
Morosov, S. S.;
Aleshkin, V. Ya.;
Glyavin, M. Yu.;
Denisov, G. G.;
Morozov, S. V.

Publication type:

Article

Transport Features in the Topological Phase Hg0.87Cd0.13Te under Terahertz Photoexcitation.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1064, doi. 10.1134/S1063782620090109

By:

Galeeva, A. V.;
Kazakov, A. S.;
Artamkin, A. I.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Bannikov, M. I.;
Danilov, S. N.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079

By:

Danilov, Yu. A.;
Ved', M. V.;
Vikhrova, O. V.;
Dikareva, N. V.;
Drozdov, M. N.;
Zvonkov, B. N.;
Kovalskiy, V. A.;
Kriukov, R. N.;
Kudrin, A. V.;
Lesnikov, V. P.;
Yunin, P. A.;
Andreev, A. M.

Publication type:

Article

Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1056, doi. 10.1134/S1063782620090213

By:

Okhapkin, A. I.;
Yunin, P. A.;
Arkhipova, E. A.;
Kraev, S. A.;
Korolyov, S. A.;
Drozdov, M. N.;
Shashkin, V. I.

Publication type:

Article

Elemental, Optical, and Electrochemical Study of CH3NH3PbI3 Perovskite-Based Hole Transport Layer-Free Photodiode.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1023, doi. 10.1134/S1063782620090055

By:

Chaudhary, J.;
Choudhary, S.;
Agrawal, B.;
Verma, A. S.

Publication type:

Article

Structural, Optical, and Electrical Studies of Sonochemically Synthesized CuS Nanoparticles.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1016, doi. 10.1134/S1063782620090262

By:

Singh, N.;
Taunk, M.

Publication type:

Article

Comparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 999, doi. 10.1134/S1063782620090201

By:

Khan, H. Naeem-ur-Rehman;
Mehmood, M.;
Ling, F. C. C.;
Khan, A. Faheem;
Ali, S. M.

Publication type:

Article

A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 991, doi. 10.1134/S1063782620090031

By:

Babichev, A. V.;
Kadinskaya, S. A.;
Shubina, K. Yu.;
Vasiliev, A. A.;
Blokhin, A. A.;
Moiseev, E. I.;
Blokhin, S. A.;
Mukhin, I. S.;
Eliseyev, I. A.;
Davydov, V. Yu.;
Brunkov, P. N.;
Kryzhanovskaya, N. V.;
Egorov, A. Yu.

Publication type:

Article

Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1011, doi. 10.1134/S1063782620090110

By:

Shaikh, R. A. Gani;
More, S. A.;
Bisen, G. G.;
Ghosh, S. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 9

Diffraction-Mode Selection in Heterolasers with Planar Bragg Structures.

Coherent Spin Dynamics of a Two-Dimensional Electron Gas in the Mode of a Hall Ferromagnet.

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm.

Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures.

Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.

Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates.

Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures.

Optical and Transport Properties of Epitaxial Pb<sub>0.74</sub>Sn<sub>0.26</sub>Te(In) Films with a Modifiable Surface.

Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe<sub>2</sub>.

Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic <sup>28</sup>Si<sub>1 –</sub> <sub>x</sub><sup>72</sup>Ge<sub>x</sub> Alloys.

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.

Influence of Uniaxial Deformation along the [110] Direction on the Relaxation of Arsenic Shallow Donor States in Germanium.

Electron States of Group-V Donors in Germanium: Variational Calculation Taking into Account the Short-Range Potential.

Modification of the Ratio between sp<sup>2</sup>- to sp<sup>3</sup>-Hybridized Carbon Components in PECVD Diamond-Like Films.

Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range.

Multiphonon Relaxation of the 1s(T<sub>2</sub>) States of a Singly Ionized Selenium Donor in Silicon.

Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.

Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene.

Effect of the Boundary Conditions on the High-Frequency Electrical Conductivity of a Thin Conducting Layer in a Longitudinal Magnetic Field.

Effect of Submicron Structural Parameters on the Performance of a Multi-Diode CMOS Compatible Silicon Avalanche Photodetector.

Terahertz Dispersion and Amplification under Electron Streaming in Graphene at 300 K.

Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties.

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.

Transport Features in the Topological Phase Hg<sub>0.87</sub>Cd<sub>0.13</sub>Te under Terahertz Photoexcitation.

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.

Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate.

Elemental, Optical, and Electrochemical Study of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite-Based Hole Transport Layer-Free Photodiode.

Structural, Optical, and Electrical Studies of Sonochemically Synthesized CuS Nanoparticles.

Comparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques.

A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition.

Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time.