S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities.
- Published in:
- Semiconductors, 2020, v. 54, n. 5, p. 567, doi. 10.1134/S1063782620050152
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 5
Results: 15
1
2
Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon.
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- Semiconductors, 2020, v. 54, n. 5, p. 609, doi. 10.1134/S1063782620050024
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- Article
3
Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure.
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- Semiconductors, 2020, v. 54, n. 5, p. 575, doi. 10.1134/S1063782620050140
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- Article
4
Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
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- Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
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- Article
5
Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes.
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- Semiconductors, 2020, v. 54, n. 5, p. 563, doi. 10.1134/S1063782620050085
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- Article
6
Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect.
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- Semiconductors, 2020, v. 54, n. 5, p. 518, doi. 10.1134/S1063782620050127
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- Article
7
Photoluminescence of (Zn, Pb, Mn)S Quantum Dots in Polyacrylate Matrix.
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- Semiconductors, 2020, v. 54, n. 5, p. 511, doi. 10.1134/S106378262005005X
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- Article
8
A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss.
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- Semiconductors, 2020, v. 54, n. 5, p. 587, doi. 10.1134/S1063782620050061
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- Article
9
Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures.
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- Semiconductors, 2020, v. 54, n. 5, p. 581, doi. 10.1134/S1063782620050097
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- Article
10
Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering.
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- Semiconductors, 2020, v. 54, n. 5, p. 558, doi. 10.1134/S1063782620050073
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- Article
11
Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System.
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- Semiconductors, 2020, v. 54, n. 5, p. 534, doi. 10.1134/S1063782620050164
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- Article
12
Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier.
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- Semiconductors, 2020, v. 54, n. 5, p. 529, doi. 10.1134/S1063782620050139
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- Article
13
Low-Dimensional Silicon-Carbide Structures: Analytical Estimates of Electron-Spectrum Characteristics.
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- Semiconductors, 2020, v. 54, n. 5, p. 523, doi. 10.1134/S1063782620050048
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- Article
14
Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure.
- Published in:
- Semiconductors, 2020, v. 54, n. 5, p. 554, doi. 10.1134/S1063782620050103
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- Article
15
Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram.
- Published in:
- Semiconductors, 2020, v. 54, n. 5, p. 543, doi. 10.1134/S1063782620050036
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- Publication type:
- Article