Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 4

Results: 20

Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 506, doi. 10.1134/S106378262004003X
By:
- Baraban, A. P.;
- Denisov, E. A.;
- Dmitriev, V. A.;
- Drozd, A. V.;
- Drozd, V. E.;
- Selivanov, A. A.;
- Seisyan, R. P.
Publication type:
Article
TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 501, doi. 10.1134/S1063782620040211
By:
- Vimala, P.;
- Arun Samuel, T. S.
Publication type:
Article
Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 495, doi. 10.1134/S1063782620040028
By:
- Aslanyan, A. E.;
- Avakyants, L. P.;
- Chervyakov, A. V.;
- Turkin, A. N.;
- Mirzai, S. S.;
- Kureshov, V. A.;
- Sabitov, D. R.;
- Marmalyuk, A. A.
Publication type:
Article
Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 489, doi. 10.1134/S1063782620040181
By:
- Shashkin, I. S.;
- Leshko, A. Y.;
- Nikolaev, D. N.;
- Shamakhov, V. V.;
- Veselov, D. A.;
- Rudova, N. A.;
- Bakhvalov, K. V.;
- Zolotarev, V. V.;
- Slipchenko, S. O.;
- Pikhtin, N. A.;
- Kop'ev, P. S.
Publication type:
Article
Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 484, doi. 10.1134/S106378262004017X
By:
- Shashkin, I. S.;
- Leshko, A. Y.;
- Nikolaev, D. N.;
- Shamakhov, V. V.;
- Rudova, N. A.;
- Bakhvalov, K. V.;
- Lutetskiy, A. V.;
- Kapitonov, V. A.;
- Zolotarev, V. V.;
- Slipchenko, S. O.;
- Pikhtin, N. A.;
- Kop'ev, P. S.
Publication type:
Article
Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 476, doi. 10.1134/S1063782620040053
By:
- Emelyanov, V. M.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Nakhimovich, M. V.;
- Salii, R. A.;
- Shvarts, M. Z.
Publication type:
Article
Surface Modification of SOI Sensors for the Detection of RNA Biomarkers.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 471, doi. 10.1134/S1063782620040090
By:
- Naumova, O. V.;
- Fomin, B. I.;
- Dmitrienko, E. V.;
- Pyshnaya, I. A.;
- Pyshnyi, D. V.
Publication type:
Article
Terahertz Photoconductivity in Graphene in a Magnetic Field.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 465, doi. 10.1134/S106378262004020X
By:
- Vasiliev, Yu. B.;
- Novikov, S. N.;
- Danilov, S. N.;
- Ganichev, S. D.
Publication type:
Article
Study of the Properties of Two-Dimensional MoS2 and WS2 Films Synthesized by Chemical-Vapor Deposition.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 454, doi. 10.1134/S1063782620040193
By:
- Smagulova, S. A.;
- Vinokurov, P. V.;
- Semenova, A. A.;
- Popova, E. I.;
- Vasylieva, F. D.;
- Obraztsova, E. D.;
- Fedotov, P. V.;
- Antonova, I. V.
Publication type:
Article
Multilevel Recording in Ge2Sb2Te5 Thin Films.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 450, doi. 10.1134/S1063782620040065
By:
- Fefelov, S. A.;
- Kazakova, L. P.;
- Bogoslovskiy, N. A.;
- Bylev, A. B.;
- Yakubov, A. O.
Publication type:
Article
Growth and Characterization of TCNQ-Doped Ni(II)TAAB Thin Film As a New π-Conjugated Organic Semiconductor.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 441, doi. 10.1134/S1063782620040144
By:
- Sánchez-Vergara, M. E.;
- Molina, B.;
- Hernández-García, A.;
- Álvarez-Bada, J. R.;
- Salcedo, R.
Publication type:
Article
Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 437, doi. 10.1134/S1063782620040119
By:
- Ormont, N. N.;
- Kurova, I. A.
Publication type:
Article
On the Dominant Mechanism of the Nonradiative Excitation of Manganese Ions in II–VI Diluted Magnetic Semiconductors.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 433, doi. 10.1134/S1063782620040041
By:
- Chernenko, A. V.
Publication type:
Article
Size Quantization in n-GaP.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 429, doi. 10.1134/S1063782620040132
By:
- Rasulov, V. R.;
- Rasulov, P. Ya.;
- Eshboltaev, I. M.;
- Sultonov, R. R.
Publication type:
Article
Dependence of the Crystallization Kinetics of Cr0.26Si0.74 Thin Films on Their Thickness.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 426, doi. 10.1134/S1063782620040107
By:
- Novikov, S. V.;
- Kuznetsova, V. S.;
- Burkov, A. T.;
- Schumann, J.
Publication type:
Article
Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Nikitina, E. V.;
- Arsentiev, I. N.;
- Kukushkin, S. A.
Publication type:
Article
Raman Scattering in the InSb–MnSb Eutectic Composite.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 412, doi. 10.1134/S1063782620040089
By:
- Mammadov, I. Kh.;
- Arasly, D. H.;
- Rahimov, R. N.;
- Khalilova, A. A.
Publication type:
Article
Dielectric Spectroscopy and Mechanism of the Semiconductor–Metal Phase Transition in Doped VO2:Ge and VO2:Mg Films.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 403, doi. 10.1134/S1063782620040077
By:
- Ilinskiy, A. V.;
- Kastro, R. A.;
- Pashkevich, M. E.;
- Shadrin, E. B.
Publication type:
Article
Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 399, doi. 10.1134/S1063782620040156
By:
- Seisyan, R. P.;
- Vaganov, S. A.
Publication type:
Article
Investigation of the Magnesium Impurity in Silicon.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 393, doi. 10.1134/S1063782620040120
By:
- Portsel, L. M.;
- Shuman, V. B.;
- Lavrent'ev, A. A.;
- Lodygin, A. N.;
- Abrosimov, N. V.;
- Astrov, Yu. A.
Publication type:
Article