Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 2

Results: 20

Investigation of the Influences of Post-Thermal Annealing on Physical Properties of TiO2 Thin Films Deposited by RF Sputtering.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 268, doi. 10.1134/S1063782620020086
By:
- Doghmane, H. E.;
- Touam, T.;
- Chelouche, A.;
- Challali, F.;
- Bordji, B.
Publication type:
Article
Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 263, doi. 10.1134/S1063782620020177
By:
- Moiseev, E. I.;
- Maximov, M. V.;
- Kryzhanovskaya, N. V.;
- Simchuk, O. I.;
- Kulagina, M. M.;
- Kadinskaya, S. A.;
- Guina, M.;
- Zhukov, A. E.
Publication type:
Article
Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 258, doi. 10.1134/S1063782620020153
By:
- Lebedeva, N. M.;
- Il'inskaya, N. D.;
- Ivanov, P. A.
Publication type:
Article
Exactly Solvable Model Problem on a Graphene Nanoribbon with Zigzag Edges.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 222, doi. 10.1134/S1063782620020074
By:
- Davydov, S. Yu.;
- Zubov, A. V.
Publication type:
Article
Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 253, doi. 10.1134/S1063782620020189
By:
- Romanov, V. V.;
- Ivanov, E. V.;
- Pivovarova, A. A.;
- Moiseev, K. D.;
- Yakovlev, Yu. P.
Publication type:
Article
Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 240, doi. 10.1134/S1063782620020025
By:
- Aleksandrov, O. V.;
- Mokrushina, S. A.
Publication type:
Article
Model of the Negative-Bias Temperature Instability of p-MOS Transistors.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 233, doi. 10.1134/S1063782620020037
By:
- Aleksandrov, O. V.
Publication type:
Article
Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 228, doi. 10.1134/S1063782620020049
By:
- Baglov, A. V.;
- Chubenko, E. B.;
- Hnitsko, A. A.;
- Borisenko, V. E.;
- Malashevich, A. A.;
- Uglov, V. V.
Publication type:
Article
Energy-Efficient Gas Sensors Based on Nanocrystalline Indium Oxide.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 217, doi. 10.1134/S1063782620020098
By:
- Forsh, E. A.;
- Guseva, E. A.
Publication type:
Article
Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 246, doi. 10.1134/S1063782620020128
By:
- Kalinina, E. V.;
- Violina, G. N.;
- Nikitina, I. P.;
- Ivanova, E. V.;
- Zabrodski, V. V.;
- Shvarts, M. Z.;
- Levina, S. A.;
- Nikolaev, A. V.
Publication type:
Article
Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation).
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 212, doi. 10.1134/S1063782620020190
By:
- Spirina, A. A.;
- Shwartz, N. L.
Publication type:
Article
Dielectric Spectroscopy and Features of the Mechanism of the Semiconductor–Metal Phase Transition in VO2 Films.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 205, doi. 10.1134/S1063782620020116
By:
- Ilinskiy, A. V.;
- Kastro, R. A.;
- Pashkevich, M. E.;
- Shadrin, E. B.
Publication type:
Article
Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 201, doi. 10.1134/S106378262002013X
By:
- Castro-Arata, R. A.;
- Stozharov, V. M.;
- Dolginsev, D. M.;
- Kononov, A. A.;
- Saito, Y.;
- Fons, P.;
- Tominaga, J.;
- Anisimova, N. I.;
- Kolobov, A. V.
Publication type:
Article
Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 196, doi. 10.1134/S1063782620020062
By:
- Bogatov, N. M.;
- Grigorian, L. R.;
- Kovalenko, A. I.;
- Kovalenko, M. S.;
- Kolokolov, F. A.;
- Lunin, L. S.
Publication type:
Article
Molecular States of Composite Fermions in Self-Organized InP/GaInP Quantum Dots in Zero Magnetic Field.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 190, doi. 10.1134/S1063782620020165
By:
- Mintairov, A. M.
Publication type:
Article
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207
By:
- Sreseli, O. M.;
- Bert, N. A.;
- Nevedomskii, V. N.;
- Lihachev, A. I.;
- Yassievich, I. N.;
- Ershov, A. V.;
- Nezhdanov, A. V.;
- Mashin, A. I.;
- Andreev, B. A.;
- Yablonsky, A. N.
Publication type:
Article
Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 176, doi. 10.1134/S1063782620020219
By:
- Zaitseva, E. G.;
- Naumova, O. V.;
- Fomin, B. I.
Publication type:
Article
Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 169, doi. 10.1134/S1063782620020141
By:
- Kumar, S.;
- Kumar, M. V.;
- Krishnaveni, S.
Publication type:
Article
Negative Differential Conductivity of Lanthanum-Oxide-Based Structures.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 163, doi. 10.1134/S1063782620020104
By:
- Igityan, A.;
- Aghamalyan, N.;
- Hovsepyan, R.;
- Petrosyan, S.;
- Badalyan, G.;
- Gambaryan, I.;
- Papikyan, A.;
- Kafadaryan, Y.
Publication type:
Article
Thermal Conductivity of Cu2ZnGe1 –xSnxSe4 Alloys.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 159, doi. 10.1134/S1063782620020050
By:
- Bodnar, I. V.
Publication type:
Article