Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 10
Results: 26
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes.
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- Semiconductors, 2019, v. 53, n. 10, p. 1409, doi. 10.1134/S1063782619100130
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- Article
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles.
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- Semiconductors, 2019, v. 53, n. 10, p. 1393, doi. 10.1134/S1063782619100208
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- Article
Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas.
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- 2019
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- Publication type:
- Correction Notice
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations.
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- Semiconductors, 2019, v. 53, n. 10, p. 1295, doi. 10.1134/S1063782619100099
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- Article
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity.
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- Semiconductors, 2019, v. 53, n. 10, p. 1287, doi. 10.1134/S1063782619100105
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- Article
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction.
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- Semiconductors, 2019, v. 53, n. 10, p. 1279, doi. 10.1134/S1063782619100245
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- Article
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing).
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- Semiconductors, 2019, v. 53, n. 10, p. 1282, doi. 10.1134/S1063782619100075
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- Article
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels.
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- Semiconductors, 2019, v. 53, n. 10, p. 1405, doi. 10.1134/S1063782619100087
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- Article
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers.
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- Semiconductors, 2019, v. 53, n. 10, p. 1398, doi. 10.1134/S1063782619100117
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- Article
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures.
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- Semiconductors, 2019, v. 53, n. 10, p. 1389, doi. 10.1134/S106378261910018X
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- Article
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process.
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- Semiconductors, 2019, v. 53, n. 10, p. 1386, doi. 10.1134/S1063782619100166
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- Article
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form.
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- Semiconductors, 2019, v. 53, n. 10, p. 1381, doi. 10.1134/S1063782619100269
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- Article
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities.
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- Semiconductors, 2019, v. 53, n. 10, p. 1375, doi. 10.1134/S1063782619100233
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- Article
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid.
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- Semiconductors, 2019, v. 53, n. 10, p. 1367, doi. 10.1134/S1063782619100026
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- Article
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures.
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- Semiconductors, 2019, v. 53, n. 10, p. 1363, doi. 10.1134/S106378261910021X
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- Article
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
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- Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
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- Article
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.
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- Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178
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- Article
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers.
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- Semiconductors, 2019, v. 53, n. 10, p. 1348, doi. 10.1134/S106378261910004X
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- Article
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond.
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- Semiconductors, 2019, v. 53, n. 10, p. 1340, doi. 10.1134/S1063782619100051
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- Article
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium.
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- Semiconductors, 2019, v. 53, n. 10, p. 1334, doi. 10.1134/S1063782619100221
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- Article
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals.
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- Semiconductors, 2019, v. 53, n. 10, p. 1329, doi. 10.1134/S1063782619100191
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- Article
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics.
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- Semiconductors, 2019, v. 53, n. 10, p. 1324, doi. 10.1134/S1063782619100257
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- Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
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- Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
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- Article
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode.
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- Semiconductors, 2019, v. 53, n. 10, p. 1314, doi. 10.1134/S1063782619100142
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- Article
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation.
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- Semiconductors, 2019, v. 53, n. 10, p. 1308, doi. 10.1134/S1063782619100129
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- Article
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots.
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- Semiconductors, 2019, v. 53, n. 10, p. 1304, doi. 10.1134/S1063782619100063
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- Article