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Results: 26

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1393, doi. 10.1134/S1063782619100208
By:
- Sobolev, M. M.;
- Yavsin, D. A.;
- Gurevich, S. A.
Publication type:
Article
Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas.
Published in:
2019
By:
- Khmissi, H.;
- El Sayed, A. M.
Publication type:
Correction Notice
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1409, doi. 10.1134/S1063782619100130
By:
- Lebedev, A. A.;
- Kozlovski, V. V.;
- Ivanov, P. A.;
- Levinshtein, M. E.;
- Zubov, A. V.
Publication type:
Article
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1405, doi. 10.1134/S1063782619100087
By:
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Maximov, M. V.
Publication type:
Article
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1398, doi. 10.1134/S1063782619100117
By:
- Kukushkin, V. A.
Publication type:
Article
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1389, doi. 10.1134/S106378261910018X
By:
- Shutaev, V. A.;
- Sidorov, V. G.;
- Grebenshchikova, E. A.;
- Vlasov, L. K.;
- Pivovarova, A. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1386, doi. 10.1134/S1063782619100166
By:
- Prasolov, N. D.;
- Gutkin, A. A.;
- Brunkov, P. N.
Publication type:
Article
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1381, doi. 10.1134/S1063782619100269
By:
- Zavodinsky, V. G.;
- Kuz'menko, A. P.
Publication type:
Article
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1375, doi. 10.1134/S1063782619100233
By:
- Veinger, A. I.;
- Kochman, I. V.;
- Frolov, D. A.;
- Okulov, V. I.;
- Govorkova, T. E.;
- Paranchich, L. D.
Publication type:
Article
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1367, doi. 10.1134/S1063782619100026
By:
- Alekseev, P. S.
Publication type:
Article
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1363, doi. 10.1134/S106378261910021X
By:
- Spirin, K. E.;
- Gaponova, D. M.;
- Gavrilenko, V. I.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.
Publication type:
Article
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
By:
- Andreev, B. A.;
- Lobanov, D. N.;
- Krasil'nikova, L. V.;
- Bushuykin, P. A.;
- Yablonskiy, A. N.;
- Novikov, A. V.;
- Davydov, V. Yu.;
- Yunin, P. A.;
- Kalinnikov, M. I.;
- Skorohodov, E. V.;
- Krasil'nik, Z. F.
Publication type:
Article
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178
By:
- Shobolova, T. A.;
- Korotkov, A. V.;
- Petryakova, E. V.;
- Lipatnikov, A. V.;
- Puzanov, A. S.;
- Obolensky, S. V.;
- Kozlov, V. A.
Publication type:
Article
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1348, doi. 10.1134/S106378261910004X
By:
- Arkhipova, E. A.;
- Demidov, E. V.;
- Drozdov, M. N.;
- Kraev, S. A.;
- Shashkin, V. I.;
- Lobaev, M. A.;
- Vikharev, A. L.;
- Gorbachev, A. M.;
- Radishchev, D. B.;
- Isaev, V. A.;
- Bogdanov, S. A.
Publication type:
Article
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1340, doi. 10.1134/S1063782619100051
By:
- Bekin, N. A.
Publication type:
Article
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1334, doi. 10.1134/S1063782619100221
By:
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1329, doi. 10.1134/S1063782619100191
By:
- Smagina, Zn. V.;
- Zinovyev, V. A.;
- Rodyakina, E. E.;
- Fomin, B. I.;
- Stepikhova, M. V.;
- Yablonskiy, A. N.;
- Gusev, S. A.;
- Novikov, A. V.;
- Dvurechenskii, A. V.
Publication type:
Article
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1324, doi. 10.1134/S1063782619100257
By:
- Yurasov, D. V.;
- Baidakova, N. A.;
- Verbus, V. A.;
- Gusev, N. S.;
- Mashin, A. I.;
- Morozova, E. E.;
- Nezhdanov, A. V.;
- Novikov, A. V.;
- Skorohodov, E. V.;
- Shengurov, D. V.;
- Yablonskiy, A. N.
Publication type:
Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
By:
- Novikov, A. V.;
- Yurasov, D. V.;
- Baidakova, N. A.;
- Bushuykin, P. A.;
- Andreev, B. A.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Yablonskiy, A. N.;
- Kalinnikov, M. A.;
- Krasilnik, Z. F.
Publication type:
Article
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1314, doi. 10.1134/S1063782619100142
By:
- Morozov, K. M.;
- Belonovskii, A. V.;
- Ivanov, K. A.;
- Girshova, E. I.;
- Kaliteevski, M. A.
Publication type:
Article
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1308, doi. 10.1134/S1063782619100129
By:
- Kulakovskii, V. D.;
- Demenev, A. A.
Publication type:
Article
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1304, doi. 10.1134/S1063782619100063
By:
- Derebezov, I. A.;
- Gaisler, V. A.;
- Gaisler, A. V.;
- Dmitriev, D. V.;
- Toropov, A. I.;
- von Helversen, M.;
- de la Haye, C.;
- Bounouar, S.;
- Reitzenstein, S.
Publication type:
Article
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1295, doi. 10.1134/S1063782619100099
By:
- Kocharovskaya, E. R.;
- Mishin, A. V.;
- Ryabinin, I. S.;
- Kocharovsky, V. V.
Publication type:
Article
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1287, doi. 10.1134/S1063782619100105
By:
- Kocharovsky, Vl. V.;
- Kukushkin, V. A.;
- Tarasov, S. V.;
- Kocharovskaya, E. R.;
- Kocharovsky, V. V.
Publication type:
Article
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing).
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1282, doi. 10.1134/S1063782619100075
By:
- Ginzburg, N. S.;
- Peskov, N. Yu.;
- Zaslavsky, V. Yu.;
- Kocharovskaya, E. R.;
- Malkin, A. M.;
- Sergeev, A. S.;
- Baryshev, V. R.;
- Proyavin, M. D.;
- Sobolev, D. I.
Publication type:
Article
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1279, doi. 10.1134/S1063782619100245
By:
- Vostokov, N. V.;
- Daniltsev, V. M.;
- Kraev, S. A.;
- Krukov, V. L.;
- Skorokhodov, E. V.;
- Strelchenko, S. S.;
- Shashkin, V. I.
Publication type:
Article