Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 10

Results: 26

Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas.

Published in:

2019

By:

Khmissi, H.;
El Sayed, A. M.

Publication type:

Correction Notice

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1409, doi. 10.1134/S1063782619100130

By:

Lebedev, A. A.;
Kozlovski, V. V.;
Ivanov, P. A.;
Levinshtein, M. E.;
Zubov, A. V.

Publication type:

Article

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1405, doi. 10.1134/S1063782619100087

By:

Gordeev, N. Yu.;
Payusov, A. S.;
Maximov, M. V.

Publication type:

Article

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1398, doi. 10.1134/S1063782619100117

By:

Kukushkin, V. A.

Publication type:

Article

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1393, doi. 10.1134/S1063782619100208

By:

Sobolev, M. M.;
Yavsin, D. A.;
Gurevich, S. A.

Publication type:

Article

Influence of Hydrogen on the Electrical Properties of Pd/InP Structures.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1389, doi. 10.1134/S106378261910018X

By:

Shutaev, V. A.;
Sidorov, V. G.;
Grebenshchikova, E. A.;
Vlasov, L. K.;
Pivovarova, A. A.;
Yakovlev, Yu. P.

Publication type:

Article

Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1386, doi. 10.1134/S1063782619100166

By:

Prasolov, N. D.;
Gutkin, A. A.;
Brunkov, P. N.

Publication type:

Article

Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1381, doi. 10.1134/S1063782619100269

By:

Zavodinsky, V. G.;
Kuz'menko, A. P.

Publication type:

Article

Microwave Magnetic Absorption in HgSe with Co and Ni Impurities.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1375, doi. 10.1134/S1063782619100233

By:

Veinger, A. I.;
Kochman, I. V.;
Frolov, D. A.;
Okulov, V. I.;
Govorkova, T. E.;
Paranchich, L. D.

Publication type:

Article

Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1367, doi. 10.1134/S1063782619100026

By:

Alekseev, P. S.

Publication type:

Article

Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1363, doi. 10.1134/S106378261910021X

By:

Spirin, K. E.;
Gaponova, D. M.;
Gavrilenko, V. I.;
Mikhailov, N. N.;
Dvoretsky, S. A.

Publication type:

Article

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038

By:

Andreev, B. A.;
Lobanov, D. N.;
Krasil'nikova, L. V.;
Bushuykin, P. A.;
Yablonskiy, A. N.;
Novikov, A. V.;
Davydov, V. Yu.;
Yunin, P. A.;
Kalinnikov, M. I.;
Skorohodov, E. V.;
Krasil'nik, Z. F.

Publication type:

Article

Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178

By:

Shobolova, T. A.;
Korotkov, A. V.;
Petryakova, E. V.;
Lipatnikov, A. V.;
Puzanov, A. S.;
Obolensky, S. V.;
Kozlov, V. A.

Publication type:

Article

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1348, doi. 10.1134/S106378261910004X

By:

Arkhipova, E. A.;
Demidov, E. V.;
Drozdov, M. N.;
Kraev, S. A.;
Shashkin, V. I.;
Lobaev, M. A.;
Vikharev, A. L.;
Gorbachev, A. M.;
Radishchev, D. B.;
Isaev, V. A.;
Bogdanov, S. A.

Publication type:

Article

On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1340, doi. 10.1134/S1063782619100051

By:

Bekin, N. A.

Publication type:

Article

On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1334, doi. 10.1134/S1063782619100221

By:

Tsyplenkov, V. V.;
Shastin, V. N.

Publication type:

Article

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1329, doi. 10.1134/S1063782619100191

By:

Smagina, Zn. V.;
Zinovyev, V. A.;
Rodyakina, E. E.;
Fomin, B. I.;
Stepikhova, M. V.;
Yablonskiy, A. N.;
Gusev, S. A.;
Novikov, A. V.;
Dvurechenskii, A. V.

Publication type:

Article

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1324, doi. 10.1134/S1063782619100257

By:

Yurasov, D. V.;
Baidakova, N. A.;
Verbus, V. A.;
Gusev, N. S.;
Mashin, A. I.;
Morozova, E. E.;
Nezhdanov, A. V.;
Novikov, A. V.;
Skorohodov, E. V.;
Shengurov, D. V.;
Yablonskiy, A. N.

Publication type:

Article

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154

By:

Novikov, A. V.;
Yurasov, D. V.;
Baidakova, N. A.;
Bushuykin, P. A.;
Andreev, B. A.;
Yunin, P. A.;
Drozdov, M. N.;
Yablonskiy, A. N.;
Kalinnikov, M. A.;
Krasilnik, Z. F.

Publication type:

Article

Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1314, doi. 10.1134/S1063782619100142

By:

Morozov, K. M.;
Belonovskii, A. V.;
Ivanov, K. A.;
Girshova, E. I.;
Kaliteevski, M. A.

Publication type:

Article

Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1308, doi. 10.1134/S1063782619100129

By:

Kulakovskii, V. D.;
Demenev, A. A.

Publication type:

Article

Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1304, doi. 10.1134/S1063782619100063

By:

Derebezov, I. A.;
Gaisler, V. A.;
Gaisler, A. V.;
Dmitriev, D. V.;
Toropov, A. I.;
von Helversen, M.;
de la Haye, C.;
Bounouar, S.;
Reitzenstein, S.

Publication type:

Article

Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1295, doi. 10.1134/S1063782619100099

By:

Kocharovskaya, E. R.;
Mishin, A. V.;
Ryabinin, I. S.;
Kocharovsky, V. V.

Publication type:

Article

On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1287, doi. 10.1134/S1063782619100105

By:

Kocharovsky, Vl. V.;
Kukushkin, V. A.;
Tarasov, S. V.;
Kocharovskaya, E. R.;
Kocharovsky, V. V.

Publication type:

Article

2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing).

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1282, doi. 10.1134/S1063782619100075

By:

Ginzburg, N. S.;
Peskov, N. Yu.;
Zaslavsky, V. Yu.;
Kocharovskaya, E. R.;
Malkin, A. M.;
Sergeev, A. S.;
Baryshev, V. R.;
Proyavin, M. D.;
Sobolev, D. I.

Publication type:

Article

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1279, doi. 10.1134/S1063782619100245

By:

Vostokov, N. V.;
Daniltsev, V. M.;
Kraev, S. A.;
Krukov, V. L.;
Skorokhodov, E. V.;
Strelchenko, S. S.;
Shashkin, V. I.

Publication type:

Article