Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 9
Results: 27
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes.
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- Semiconductors, 2019, v. 53, n. 9, p. 1272, doi. 10.1134/S1063782619090069
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Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature.
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- Semiconductors, 2019, v. 53, n. 9, p. 1266, doi. 10.1134/S1063782619090240
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Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.
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- Semiconductors, 2019, v. 53, n. 9, p. 1262, doi. 10.1134/S1063782619090161
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Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.
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- Semiconductors, 2019, v. 53, n. 9, p. 1258, doi. 10.1134/S1063782619090082
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Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.
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- Semiconductors, 2019, v. 53, n. 9, p. 1255, doi. 10.1134/S1063782619090288
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Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure.
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- Semiconductors, 2019, v. 53, n. 9, p. 1249, doi. 10.1134/S1063782619090276
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Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides.
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- Semiconductors, 2019, v. 53, n. 9, p. 1246, doi. 10.1134/S1063782619090252
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Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al<sub>2</sub>O<sub>3</sub> Substrate.
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- Semiconductors, 2019, v. 53, n. 9, p. 1242, doi. 10.1134/S1063782619090227
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Tunnel Diodes Based on n<sup>+</sup>-Ge/p<sup>+</sup>-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition.
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- Semiconductors, 2019, v. 53, n. 9, p. 1238, doi. 10.1134/S1063782619090203
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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.
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- Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197
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On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction.
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- Semiconductors, 2019, v. 53, n. 9, p. 1229, doi. 10.1134/S1063782619090215
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Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes.
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- Semiconductors, 2019, v. 53, n. 9, p. 1222, doi. 10.1134/S1063782619090173
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Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1217, doi. 10.1134/S1063782619090185
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On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing.
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- Semiconductors, 2019, v. 53, n. 9, p. 1211, doi. 10.1134/S106378261909015X
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On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1207, doi. 10.1134/S1063782619090148
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Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond.
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- Semiconductors, 2019, v. 53, n. 9, p. 1203, doi. 10.1134/S1063782619090136
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Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1198, doi. 10.1134/S1063782619090100
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Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices.
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- Semiconductors, 2019, v. 53, n. 9, p. 1192, doi. 10.1134/S1063782619090124
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On the Specific Features of the Plasma-Assisted MBE Synthesis of n<sup>+</sup>-GaN Layers on GaN/c-Al<sub>2</sub>O<sub>3</sub> Templates.
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- Semiconductors, 2019, v. 53, n. 9, p. 1187, doi. 10.1134/S1063782619090112
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Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.
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- Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094
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Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors.
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- Semiconductors, 2019, v. 53, n. 9, p. 1175, doi. 10.1134/S1063782619090070
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On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons.
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- Semiconductors, 2019, v. 53, n. 9, p. 1170, doi. 10.1134/S1063782619090239
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Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure.
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- Semiconductors, 2019, v. 53, n. 9, p. 1164, doi. 10.1134/S1063782619090057
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In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique.
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- Semiconductors, 2019, v. 53, n. 9, p. 1158, doi. 10.1134/S1063782619090045
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Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd<sub>0.7</sub>Hg<sub>0.3</sub>Te QWs Near 14 μm.
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- Semiconductors, 2019, v. 53, n. 9, p. 1154, doi. 10.1134/S1063782619090264
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Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators.
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- Semiconductors, 2019, v. 53, n. 9, p. 1148, doi. 10.1134/S1063782619090033
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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.
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- Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021
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