Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 8

Results: 24

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Mizerov, A. M.;
Arsentyev, I. N.;
Leiste, Harald;
Rinke, Monika

Publication type:

Article

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037

By:

Aleshkin, V. Ya.;
Baidus, N. V.;
Dubinov, A. A.;
Kudryavtsev, K. E.;
Nekorkin, S. M.;
Kruglov, A. V.;
Reunov, D. G.

Publication type:

Article

On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1042, doi. 10.1134/S1063782619080050

By:

Averkiev, N. S.;
Korotchenkov, A. V.;
Kosobukin, V. A.

Publication type:

Article

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1075, doi. 10.1134/S1063782619080207

By:

Uvarov, A. V.;
Zelentsov, K. S.;
Gudovskikh, A. S.

Publication type:

Article

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1114, doi. 10.1134/S1063782619080244

By:

Abolmasov, S. N.;
Abramov, A. S.;
Semenov, A. V.;
Shakhray, I. S.;
Terukov, E. I.;
Malchukova, E. V.;
Trapeznikova, I. N.

Publication type:

Article

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1104, doi. 10.1134/S1063782619080074

By:

Blokhin, S. A.;
Bobrov, M. A.;
Blokhin, A. A.;
Kuzmenkov, A. G.;
Maleev, N. A.;
Ustinov, V. M.;
Kolodeznyi, E. S.;
Rochas, S. S.;
Babichev, A. V.;
Novikov, I. I.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Denisov, D. V.;
Voropaev, K. O.;
Ionov, A. S.;
Egorov, A. Yu.

Publication type:

Article

Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1131, doi. 10.1134/S1063782619080189

By:

Sorokin, S. V.;
Avdienko, P. S.;
Sedova, I. V.;
Kirilenko, D. A.;
Yagovkina, M. A.;
Smirnov, A. N.;
Davydov, V. Yu.;
Ivanov, S. V.

Publication type:

Article

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1038, doi. 10.1134/S1063782619080104

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Mishchenko, A.;
Novoselov, K. S.

Publication type:

Article

Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1048, doi. 10.1134/S106378261908013X

By:

Kurdyukov, D. A.;
Feoktistov, N. A.;
Kirilenko, D. A.;
Smirnov, A. N.;
Davydov, V. Yu.;
Golubev, V. G.

Publication type:

Article

Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1110, doi. 10.1134/S1063782619080116

By:

Khvostikov, V. P.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Potapovich, N. S.;
Sorokina, S. V.;
Shvarts, M. Z.

Publication type:

Article

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220

By:

Zhukov, A. E.;
Moiseev, E. I.;
Kryzhanovskaya, N. V.;
Blokhin, S. A.;
Kulagina, M. M.;
Guseva, Yu. A.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Mozharov, A. M.;
Zubov, F. I.;
Maximov, M. V.

Publication type:

Article

Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1092, doi. 10.1134/S1063782619080128

By:

Kurbanov, M. A.;
Ramazanova, I. S.;
Dadashov, Z. A.;
Mamedov, F. I.;
Huseynova, G. Kh.;
Yusifova, U. V.;
Tatardar, F. N.;
Faraczade, I. A.

Publication type:

Article

Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1088, doi. 10.1134/S1063782619080141

By:

Lunina, M. L.;
Lunin, L. S.;
Alfimova, D. L.;
Pashchenko, A. S.;
Danilina, E. M.;
Nefedov, V. V.

Publication type:

Article

On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1082, doi. 10.1134/S1063782619080232

By:

Zhukov, N. D.;
Kryl'skiy, D. V.;
Shishkin, M. I.;
Khazanov, A. A.

Publication type:

Article

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1066, doi. 10.1134/S1063782619080025

By:

Aleshin, A. N.;
Bugaev, A. S.;
Ruban, O. A.;
Saraikin, V. V.;
Tabachkova, N. Yu.;
Shchetinin, I. V.

Publication type:

Article

Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1060, doi. 10.1134/S1063782619080086

By:

Gruzintsev, A. N.;
Redkin, A. N.;
Yakimov, E. E.

Publication type:

Article

Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1054, doi. 10.1134/S1063782619080177

By:

Sladkopevtsev, B. V.;
Kotov, G. I.;
Arsentyev, I. N.;
Shashkin, I. S.;
Mittova, I. Ya.;
Tomina, E. V.;
Samsonov, A. A.;
Kostenko, P. V.

Publication type:

Article

Some Physical Properties of the New Intermetallic Compound NbCd2.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1028, doi. 10.1134/S1063782619080219

By:

Volodin, V. N.;
Tuleushev, Y. Zh.;
Zhakanbaev, E. A.;
Migunova, A. A.;
Nicenko, A. B.

Publication type:

Article

Nanostructured ITO/SiO2 Coatings.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1033, doi. 10.1134/S1063782619080153

By:

Markov, L. K.;
Pavluchenko, A. S.;
Smirnova, I. P.

Publication type:

Article

Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1018, doi. 10.1134/S1063782619080098

By:

Kamilov, I. K.;
Stepurenko, A. A.;
Gummetov, A. E.

Publication type:

Article

Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1024, doi. 10.1134/S1063782619080049

By:

Avanesyan, V. T.;
Piskovatskova, I. V.;
Stozharov, V. M.

Publication type:

Article

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1011, doi. 10.1134/S1063782619080062

By:

Balakshin, Yu. V.;
Kozhemiako, A. V.;
Petrovic, S.;
Erich, M.;
Shemukhin, A. A.;
Chernysh, V. S.

Publication type:

Article

Diffusion and Interaction of In and As Implanted into SiO2 Films.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1004, doi. 10.1134/S1063782619080190

By:

Tyschenko, I. E.;
Voelskow, M.;
Mikhaylov, A. N.;
Tetelbaum, D. I.

Publication type:

Article

Zhores Ivanovich Alferov (March 15, 1930–March 1, 2019).

Published in:: 2019
Publication type:: Calendar

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 8

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.

On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum.

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.

Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.

Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles.

Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.

Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures.

Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures.

On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots.

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate.

Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length.

Investigation of the Current–Voltage Characteristics of New MnO<sub>2</sub>/GaAs(100) and V<sub>2</sub>O<sub>5</sub>/GaAs(100) Heterostructures Subjected to Heat Treatment.

Some Physical Properties of the New Intermetallic Compound NbCd<sub>2</sub>.

Nanostructured ITO/SiO<sub>2</sub> Coatings.

Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field.

Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals.

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon.

Diffusion and Interaction of In and As Implanted into SiO<sub>2</sub> Films.

Zhores Ivanovich Alferov (March 15, 1930–March 1, 2019).