Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 4

Results: 27

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 573, doi. 10.1134/S106378261904016X
By:
- Kumar, B. Rajesh;
- Hymavathi, B.
Publication type:
Article
Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 566, doi. 10.1134/S1063782619040274
By:
- Zharova, Yu. A.;
- Tolmachev, V. A.;
- Pavlov, S. I.
Publication type:
Article
Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 552, doi. 10.1134/S1063782619040158
By:
- Kononov, N. N.;
- Davydova, D. V.;
- Bubenov, S. S.;
- Dorofeev, S. G.
Publication type:
Article
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 545, doi. 10.1134/S1063782619040080
By:
- Dobrov, V. A.;
- Kozlovski, V. V.;
- Mescheryakov, A. V.;
- Usychenko, V. G.;
- Chernova, A. S.;
- Shabunina, E. I.;
- Shmidt, N. M.
Publication type:
Article
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 540, doi. 10.1134/S1063782619040213
By:
- Nikolskaia, A. B.;
- Kozlov, S. S.;
- Vildanova, M. F.;
- Shevaleevskiy, O. I.
Publication type:
Article
Formation of Porous Silicon by Nanopowder Sintering.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 530, doi. 10.1134/S1063782619040031
By:
- Astrova, E. V.;
- Voronkov, V. B.;
- Nashchekin, A. V.;
- Parfeneva, A. V.;
- Lozhkina, D. A.;
- Tomkovich, M. V.;
- Kukushkina, Yu. A.
Publication type:
Article
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 524, doi. 10.1134/S1063782619040110
By:
- Gorbatyuk, A. V.;
- Ivanov, B. V.
Publication type:
Article
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 519, doi. 10.1134/S1063782619040183
By:
- Kyuregyan, A. S.
Publication type:
Article
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 511, doi. 10.1134/S1063782619040171
By:
- Kyuregyan, A. S.
Publication type:
Article
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092
By:
- Emelyanov, E. A.;
- Vasev, A. V.;
- Semyagin, B. R.;
- Yesin, M. Yu.;
- Loshkarev, I. D.;
- Vasilenko, A. P.;
- Putyato, M. A.;
- Petrushkov, M. O.;
- Preobrazhenskii, V. V.
Publication type:
Article
Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 499, doi. 10.1134/S1063782619040249
By:
- Rasmagin, S. I.;
- Novikov, I. K.
Publication type:
Article
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262
By:
- Tyschenko, I. E.;
- Volodin, V. A.;
- Popov, V. P.
Publication type:
Article
Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 489, doi. 10.1134/S1063782619040067
By:
- Jyoti Chaudhary;
- Choudhary, Shaily;
- Negi, Chandra Mohan Singh;
- Gupta, Saral K.;
- Verma, Ajay Singh
Publication type:
Article
Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 484, doi. 10.1134/S1063782619040146
By:
- Khmissi, H.;
- El Sayed, A. M.
Publication type:
Article
Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 477, doi. 10.1134/S106378261904002X
By:
- Aslanyan, A. E.;
- Avakyants, L. P.;
- Bokov, P. Yu.;
- Chervyakov, A. V.
Publication type:
Article
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Klad'ko, V. P.;
- Safryuk-Romanenko, N. V.;
- Lubchenko, A. I.;
- Sheremet, V. N.;
- Shynkarenko, V. V.;
- Slepova, A. S.;
- Pilipenko, V. A.;
- Petlitskaya, T. V.;
- Pilipchuk, A. S.;
- Konakova, R. V.;
- Sachenko, A. V.
Publication type:
Article
Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 465, doi. 10.1134/S1063782619040109
By:
- Goldman, E. I.;
- Levashov, S. A.;
- Chucheva, G. V.
Publication type:
Article
Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 458, doi. 10.1134/S1063782619040134
By:
- Karpunin, V. V.;
- Margulis, V. A.
Publication type:
Article
Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 452, doi. 10.1134/S1063782619040122
By:
- Kalygina, V. M.;
- Lygdenova, T. Z.;
- Petrova, Yu. S.;
- Chernikov, E. V.
Publication type:
Article
Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 447, doi. 10.1134/S1063782619040286
By:
- Kumar, K. Deva Arun;
- Valanarasu, S.;
- Rosario, S. Rex
Publication type:
Article
Simulated Contrast of Two Dislocations.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 442, doi. 10.1134/S1063782619040195
By:
- Ledra, M.;
- El Hdiy, A.
Publication type:
Article
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 415, doi. 10.1134/S1063782619040250
By:
- Sobolev, N. A.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Bondarev, A. D.;
- Karabeshkin, K. V.;
- Fomin, E. V.;
- Kalyadin, A. E.;
- Mikoushkin, V. M.;
- Shek, E. I.;
- Sherstnev, E. V.
Publication type:
Article
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 439, doi. 10.1134/S1063782619040201
By:
- Nabiullin, I. R.;
- Gadiev, R. M.;
- Lachinov, A. N.
Publication type:
Article
Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 419, doi. 10.1134/S1063782619040079
By:
- Dmitriev, A. V.
Publication type:
Article
Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 434, doi. 10.1134/S1063782619040237
By:
- Petrov, A. S.;
- Sitnikov, S. V.;
- Kosolobov, S. S.;
- Latyshev, A. V.
Publication type:
Article
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 428, doi. 10.1134/S1063782619040043
By:
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Semakova, A. A.;
- Zegrya, G. G.
Publication type:
Article
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 411, doi. 10.1134/S1063782619040225
By:
- Orlov, V. I.;
- Yarykin, N. A.;
- Yakimov, E. B.
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 4

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering.

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon.

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.

Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities.

Formation of Porous Silicon by Nanopowder Sintering.

Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink.

High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects.

Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode.

The Growth of InAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films.

Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.

Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device.

Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas.

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n<sup>+</sup>–n-Si Diffusion Silicon Structures.

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.

Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer.

Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures.

Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application.

Simulated Contrast of Two Dislocations.

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film.

Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures.

Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths.

Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing.

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.

Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon.