Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 2
Results: 25
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile.
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- Semiconductors, 2019, v. 53, n. 2, p. 268, doi. 10.1134/S1063782619020076
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Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves.
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- Semiconductors, 2019, v. 53, n. 2, p. 264, doi. 10.1134/S1063782619020258
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On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method.
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- Semiconductors, 2019, v. 53, n. 2, p. 260, doi. 10.1134/S1063782619020155
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Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering.
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- Semiconductors, 2019, v. 53, n. 2, p. 255, doi. 10.1134/S106378261902026X
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Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates.
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- Semiconductors, 2019, v. 53, n. 2, p. 246, doi. 10.1134/S1063782619020088
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Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers.
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- Semiconductors, 2019, v. 53, n. 2, p. 241, doi. 10.1134/S1063782619020246
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Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers.
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- Semiconductors, 2019, v. 53, n. 2, p. 237, doi. 10.1134/S1063782619020064
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Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent.
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- Semiconductors, 2019, v. 53, n. 2, p. 234, doi. 10.1134/S1063782619020118
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Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates.
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- Semiconductors, 2019, v. 53, n. 2, p. 229, doi. 10.1134/S1063782619020210
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Optical Properties of Polyethylene Filled with Bi<sub>2</sub>Te<sub>3</sub> Nanocrystallites.
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- Semiconductors, 2019, v. 53, n. 2, p. 224, doi. 10.1134/S106378261902009X
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Thermoresistive Semiconductor SiC/Si Composite Material.
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- Semiconductors, 2019, v. 53, n. 2, p. 220, doi. 10.1134/S1063782619020052
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Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides.
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- Semiconductors, 2019, v. 53, n. 2, p. 215, doi. 10.1134/S1063782619020180
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Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga<sub>2</sub>Se<sub>3</sub>) Structures.
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- Semiconductors, 2019, v. 53, n. 2, p. 210, doi. 10.1134/S1063782619020209
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Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light.
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- Semiconductors, 2019, v. 53, n. 2, p. 205, doi. 10.1134/S1063782619020027
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Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance.
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- Semiconductors, 2019, v. 53, n. 2, p. 200, doi. 10.1134/S1063782619020106
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Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region.
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- Semiconductors, 2019, v. 53, n. 2, p. 195, doi. 10.1134/S1063782619020039
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Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface.
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- Semiconductors, 2019, v. 53, n. 2, p. 188, doi. 10.1134/S1063782619020040
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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.
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- Semiconductors, 2019, v. 53, n. 2, p. 180, doi. 10.1134/S1063782619020143
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Technique for the Formation of Antireflection Coatings Based on ITO Films.
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- Semiconductors, 2019, v. 53, n. 2, p. 172, doi. 10.1134/S1063782619020167
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Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl<sub>2</sub>.
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- Semiconductors, 2019, v. 53, n. 2, p. 165, doi. 10.1134/S1063782619020179
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Laser Annealing of Thin ITO Films on Flexible Organic Substrates.
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- Semiconductors, 2019, v. 53, n. 2, p. 160, doi. 10.1134/S1063782619020192
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Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions.
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- Semiconductors, 2019, v. 53, n. 2, p. 156, doi. 10.1134/S1063782619020234
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Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions.
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- Semiconductors, 2019, v. 53, n. 2, p. 153, doi. 10.1134/S1063782619020222
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Features of the Properties of Rare-Earth Semiconductors.
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- Semiconductors, 2019, v. 53, n. 2, p. 150, doi. 10.1134/S106378261902012X
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Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later).
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- Semiconductors, 2019, v. 53, n. 2, p. 139, doi. 10.1134/S1063782619020131
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