Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 1

Results: 23

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 132, doi. 10.1134/S1063782619010196

By:

Shvets, V. A.;
Azarov, I. A.;
Marin, D. V.;
Yakushev, M. V.;
Rykhlitsky, S. V.

Publication type:

Article

Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 127, doi. 10.1134/S1063782619010184

By:

Shchukin, V. G.;
Sharafutdinov, R. G.;
Konstantinov, V. O.

Publication type:

Article

Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 114, doi. 10.1134/S1063782619010147

By:

Li, G. V.;
Astrova, E. V.;
Lihachev, A. I.

Publication type:

Article

Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 110, doi. 10.1134/S1063782619010123

By:

Kulikov, N. A.;
Popov, V. D.

Publication type:

Article

Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 106, doi. 10.1134/S1063782619010135

By:

Kuzmichev, N. D.;
Vasyutin, M. A.

Publication type:

Article

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 99, doi. 10.1134/S1063782619010032

By:

Bochkareva, N. I.;
Ivanov, A. M.;
Klochkov, A. V.;
Shreter, Y. G.

Publication type:

Article

Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 96, doi. 10.1134/S1063782619010214

By:

Svintsov, A. A.;
Yakimov, E. B.;
Dorokhin, M. V.;
Demina, P. B.;
Kuznetsov, Yu. M.

Publication type:

Article

Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 89, doi. 10.1134/S1063782619010111

By:

Khrypunov, G. S.;
Meriuts, A. V.;
Shelest, T. N.;
Khrypunov, M. G

Publication type:

Article

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 85, doi. 10.1134/S1063782619010093

By:

Goldman, E. I.;
Nabiev, A.;
Naryshkina, V. G.;
Chucheva, G. V.

Publication type:

Article

A Chainlike Model of the Zigzag Edge Decoration of Graphene.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 78, doi. 10.1134/S1063782619010044

By:

Davydov, S. Yu.

Publication type:

Article

Investigation into the Memristor Effect in Nanocrystalline ZnO Films.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 72, doi. 10.1134/S1063782619010202

By:

Smirnov, V. A.;
Tominov, R. V.;
Avilov, V. I.;
Alyabieva, N. I.;
Vakulov, Z. E.;
Zamburg, E. G.;
Khakhulin, D. A.;
Ageev, O. A.

Publication type:

Article

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Lukin, A. N.;
Mizerov, A. M.;
Nikitina, E. V.;
Arsentyev, I. N.;
Leiste, H.;
Rinke, M.

Publication type:

Article

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238

By:

Tyschenko, I. E.;
Zhanaev, E. D.;
Popov, V. P.

Publication type:

Article

Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 55, doi. 10.1134/S1063782619010160

By:

Peshcherova, S. M.;
Yakimov, E. B.;
Nepomnyashchikh, A. I.;
Orlov, V. I.;
Feklisova, O. V.;
Pavlova, L. A.;
Presnyakov, R. V.

Publication type:

Article

The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 51, doi. 10.1134/S1063782619010056

By:

Elistratova, M. A.;
Zakharova, I. B.;
Li, G. V.;
Dubrovin, R. M.;
Sreseli, O. M.

Publication type:

Article

Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 46, doi. 10.1134/S1063782619010159

By:

Mikhailova, M. P.;
Ivanov, E. V.;
Danilov, L. V.;
Levin, R. V.;
Andreev, I. A.;
Kunitsyna, E. V.;
Yakovlev, Yu. P.

Publication type:

Article

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 42, doi. 10.1134/S1063782619010081

By:

Goldman, E. I.;
Kuharskaya, N. F.;
Levashov, S. A.;
Chucheva, G. V.

Publication type:

Article

Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 37, doi. 10.1134/S1063782619010068

By:

Galeeva, A. V.;
Gomanko, M. A.;
Tamm, M. E.;
Yashina, L. V.;
Danilov, S. N.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 28, doi. 10.1134/S1063782619010226

By:

Torkhov, N. A.

Publication type:

Article

Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 22, doi. 10.1134/S106378261901010X

By:

Gruzintsev, A. N.;
Redkin, A. N.

Publication type:

Article

Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 14, doi. 10.1134/S106378261901024X

By:

Yafarov, R. K.

Publication type:

Article

Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 9, doi. 10.1134/S1063782619010020

By:

Bannaya, V. F.;
Nikitina, E. V.

Publication type:

Article

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 1, doi. 10.1134/S106378261901007X

By:

Gladilin, A. A.;
Ilichev, N. N.;
Kalinushkin, V. P.;
Studenikin, M. I.;
Uvarov, O. V.;
Chapnin, V. A.;
Tumorin, V. V.;
Novikov, G. G.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 1

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe.

Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method.

Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence.

Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO<sub>2</sub> Interface in a MOS Transistor.

Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure.

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well.

Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell.

Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis.

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect.

A Chainlike Model of the Zigzag Edge Decoration of Graphene.

Investigation into the Memristor Effect in Nanocrystalline ZnO Films.

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.

Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters.

The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films.

Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE.

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements.

Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>3</sub> Topological Insulators.

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures.

Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping.

Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals.

Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium.

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals.