Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 16

Results: 38

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2149, doi. 10.1134/S1063782618160406

By:

Zinovyev, V. A.;
Zinovieva, A. F.;
Katsuba, A. V.;
Smagina, Zh. V.;
Dvurechenskii, A. V.;
Borodavchenko, O. M.;
Zhivulko, V. D.;
Mudryi, A. V.

Publication type:

Article

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285

By:

Shtrom, I. V.;
Kotlyar, K. P.;
Filosofov, N. G.;
Serov, A. Yu.;
Krizhkov, D. I.;
Samsonenko, Yu. B.;
Ilkiev, I. V.;
Reznik, R. R.;
Agekyan, V. F.;
Cirlin, G. E.

Publication type:

Article

Manganese Doped Zinc Sulfide Quantum Dots as Efficient Photocatalyst for Dye Decolorization.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2143, doi. 10.1134/S1063782618160261

By:

Sergeeva, K. A.;
Sergeev, A. A.;
Postnova, I. V.;
Voznesenskiy, S. S.

Publication type:

Article

Luminescent Silicon Nanocrystals Prepared by Laser-Assisted Synthesis in Liquid for Imaging and Photovoltaic Applications.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2140, doi. 10.1134/S1063782618160352

By:

Tarasenko, N. V.;
Butsen, A. V.;
Nevar, A. A.;
Tarasenka, N. N.;
Stankevičius, E.;
Gečys, P.;
Trusovas, R.;
Daugnoraitė, E.;
Račiukaitis, G.

Publication type:

Article

Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2135, doi. 10.1134/S1063782618160340

By:

Spirina, A. A.;
Nastovjak, A. G.;
Neizvestny, I. G.;
Shwartz, N. L.

Publication type:

Article

Nucleation and Growth Modeling of Protein Crystals in Capillaries.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2132, doi. 10.1134/S1063782618160339

By:

Sokolovskii, A. S.;
Besedina, N. A.;
Berdnikov, Yu.;
Dubrovskii, V. G.

Publication type:

Article

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327

By:

Sobolev, M. S.;
Lazarenko, A. A.;
Mizerov, A. M.;
Nikitina, E. V.;
Pirogov, E. V.;
Timoshnev, S. N.;
Bouravleuv, A. D.

Publication type:

Article

Two Methods of Calculation Ternary Nanowire Composition.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2124, doi. 10.1134/S1063782618160315

By:

Sibirev, N. V.;
Koryakin, A. A.;
Berdnikov, Y. S.

Publication type:

Article

Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2120, doi. 10.1134/S1063782618160303

By:

Sibirev, N. V.;
Belyaev, V. V.;
Berdnikov, Y. S.

Publication type:

Article

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2117, doi. 10.1134/S1063782618160297

By:

Shubina, K. Yu.;
Berezovskaya, T. N.;
Mokhov, D. V.;
Morozov, I. A.;
Kotlyar, K. P.;
Mizerov, A. M.;
Nikitina, E. V.;
Bouravleuv, A. D.

Publication type:

Article

FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2114, doi. 10.1134/S1063782618160212

By:

Mitrofanov, M. I.;
Levitskii, I. V.;
Voznyuk, G. V.;
Tatarinov, E. E.;
Rodin, S. N.;
Lundin, W. V.;
Evtikhiev, V. P.;
Mizerov, M.N.

Publication type:

Article

Structural Transformation of "Silica+Zn" Nanocomposite after Annealing in Oxidizing Atmosphere.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2111, doi. 10.1134/S1063782618160133

By:

Komarov, F. F.;
Makhavikou, M. A.;
Vlasukova, L. A.;
Milchanin, O. V.;
Skuratov, V. A.;
Vuuren, A. Janse;
Neetling, J. N.;
Parkhomenko, I. N.;
Żuk, J.

Publication type:

Article

MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2107, doi. 10.1134/S1063782618160170

By:

Lutsenko, E. V.;
Rzheutski, M. V.;
Vainilovich, A. G.;
Svitsiankou, I. E.;
Shulenkova, V. A.;
Muravitskaya, E. V.;
Alexeev, A. N.;
Petrov, S. I.;
Yablonskii, G. P.

Publication type:

Article

New Advanced Hybrid Organic-Inorganic Complex.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2103, doi. 10.1134/S1063782618160157

By:

Lapina, V. A.;
Pavich, T. A.;
Pershukevich, P. P.

Publication type:

Article

Formation and Properties of New Types of Metal-Dielectric Nanostructures for Creating Optical Metamaterials.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2099, doi. 10.1134/S106378261816011X

By:

Kazak, N. S.;
Agabekov, V. E.;
Kurilkina, S. N.;
Belyi, V. N.

Publication type:

Article

InGaN/GaN QDs Nanorods: Processing and Properties.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2096, doi. 10.1134/S1063782618160145

By:

Kotlyar, K. P.;
Soshnikov, I. P.;
Morozov, I. A.;
Berezovskaya, T. N.;
Kryzhanovskaya, N. V.;
Kudryashov, D. A.;
Lysak, V. V.

Publication type:

Article

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X

By:

Fedorov, V. V.;
Bolshakov, A. D.;
Dvoretckaia, L. N.;
Sapunov, G. A.;
Kirilenko, D. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2088, doi. 10.1134/S1063782618160054

By:

Bolshakov, A. D.;
Dvoretckaia, L. N.;
Fedorov, V. V.;
Sapunov, G. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Mukhin, M. S.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

Growth Modes of GaN Plasma-Assisted MBE Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2085, doi. 10.1134/S1063782618160042

By:

Berdnikov, Yu. S.;
Sibirev, N. V.

Publication type:

Article

Atomic Force Microscopy Local Oxidation of GeO Thin Films.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2081, doi. 10.1134/S1063782618160030

By:

Astankova, K. N.;
Kozhukhov, A. S.;
Gorokhov, E. B.;
Azarov, I. A.;
Latyshev, A. V.

Publication type:

Article

Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2078, doi. 10.1134/S1063782618160376

By:

Ushakov, N. M.;
Vasil'kov, M. Yu.;
Shaturnuy, V. R.

Publication type:

Article

Growth of Textured Au-Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2073, doi. 10.1134/S1063782618160364

By:

Tarasov, I. A.;
Smolyarova, T. E.;
Yakovlev, I. A.;
Kosyrev, N. N.;
Komarov, V. A.;
Nemtsev, I. V.;
Varnakov, S. N.;
Patrin, S. G.;
Ovchinnikov, S. G.

Publication type:

Article

XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Si.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2070, doi. 10.1134/S1063782618160121

By:

Khramov, E. V.;
Privezentsev, V. V.

Publication type:

Article

Polarized Retroreflection from Nanoporous III-V Semiconductors.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2068, doi. 10.1134/S1063782618160248

By:

Prislopski, S. Ya.;
Gaponenko, S. V.;
Monaico, E.;
Sergentu, V. V.;
Tiginyanu, I. M.

Publication type:

Article

Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2065, doi. 10.1134/S1063782618160224

By:

Muravijova, D. V.;
Ermakov, I. A.;
Eurov, D. A.;
Kirilenko, D. A.;
Kurdyukov, D. A.;
Rabchinskii, M. K.;
Shvidchenko, A. V.;
Trofimuk, A. D.;
Baidakova, M. V.

Publication type:

Article

In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy Ion Implantation.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2061, doi. 10.1134/S1063782618160200

By:

Mikoushkin, V. M.

Publication type:

Article

Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2057, doi. 10.1134/S1063782618160194

By:

Mikoushkin, V. M.;
Bryzgalov, V. V.;
Makarevskaya, E. A.;
Solonitsyna, A. P.;
Marchenko, D.E.

Publication type:

Article

Polarization Properties of Photoluminescence of Anisotropic Polymer Films Containing Aligned Au Nanorods and Semiconductor Nanoparticles of Various Shape.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2054, doi. 10.1134/S1063782618160108

By:

Gurinovich, L. I.;
Trotsiuk, L. L.;
Kulakovich, O. S.;
Sushko, N. I.;
Demir, H. V.;
Gaponenko, S. V.

Publication type:

Article

Reflectometry of X-ray Whispering Gallery Waves Propagating along Liquid Meniscuses.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2049, doi. 10.1134/S1063782618160091

By:

Goray, L. I.;
Asadchikov, V. E.;
Roshchin, B. S.;
Volkov, Yu. O.;
Tikhonov, A. M.

Publication type:

Article

Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2046, doi. 10.1134/S1063782618160078

By:

Dunaevskiy, M. S.;
Alekseev, P. A.;
Monakhov, A. M.;
Sokolovskii, G. S.;
Baranov, A. N.;
Arinero, R.;
Teissier, R.

Publication type:

Article

Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2039, doi. 10.1134/S1063782618160182

By:

Muhammad Maqbool;
Alruwaili, Amani;
Milinovic, Dunja;
Khan, Tahirzeb;
Ali, Ghafar;
Ahmad, Iftikhar

Publication type:

Article

Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2030, doi. 10.1134/S1063782618160066

By:

Demir, I.;
Altuntas, I.;
Kasapoğlu, A. E.;
Mobtakeri, S.;
Gür, E.;
Elagoz, S.

Publication type:

Article

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2026, doi. 10.1134/S106378261816039X

By:

Lianhong Yang;
Guo, Fuqiang;
Zhang, Baohua;
Li, Yanqing;
Chen, Dunjun

Publication type:

Article

Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2022, doi. 10.1134/S1063782618160236

By:

Petrosyan, S. G.;
Yesayan, A. E.;
Nersesyan, S. R.;
Khachatryan, V. A.

Publication type:

Article

Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2017, doi. 10.1134/S1063782618160169

By:

Yajie Li;
Wang, Pengfei;
Meng, Fangyuan;
Yu, Hongyan;
Zhou, Xuliang;
Wang, Huolei;
Pan, Jiaoqing

Publication type:

Article

Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2007, doi. 10.1134/S1063782618160273

By:

Seyidov, MirHasan Yu.;
Suleymanov, R. A.;
Şale, Yasin;
Kandemir, Buket Bilgen

Publication type:

Article

Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 1998, doi. 10.1134/S106378261816025X

By:

Rabehi, A.;
Amrani, M.;
Benamara, Z.;
Akkal, B.;
Ziane, A.;
Guermoui, M.;
Hatem-Kacha, A.;
Monier, G.;
Gruzza, B.;
Bideux, L.;
Robert-Goumet, C.

Publication type:

Article

Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 1991, doi. 10.1134/S1063782618160029

By:

Ajayan, J.;
Ravichandran, T.;
Mohankumar, P.;
Prajoon, P.;
Pravin, J. Charles;
Nirmal, D.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 16

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands.

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.

Manganese Doped Zinc Sulfide Quantum Dots as Efficient Photocatalyst for Dye Decolorization.

Luminescent Silicon Nanocrystals Prepared by Laser-Assisted Synthesis in Liquid for Imaging and Photovoltaic Applications.

Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation.

Nucleation and Growth Modeling of Protein Crystals in Capillaries.

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Two Methods of Calculation Ternary Nanowire Composition.

Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions.

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.

FIB Lithography Challenges of Si<sub>3</sub>N<sub>4</sub>/GaN Mask Preparation for Selective Epitaxy.

Structural Transformation of "Silica+Zn" Nanocomposite after Annealing in Oxidizing Atmosphere.

MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.

New Advanced Hybrid Organic-Inorganic Complex.

Formation and Properties of New Types of Metal-Dielectric Nanostructures for Creating Optical Metamaterials.

InGaN/GaN QDs Nanorods: Processing and Properties.

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires.

Growth Modes of GaN Plasma-Assisted MBE Nanowires.

Atomic Force Microscopy Local Oxidation of GeO Thin Films.

Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide.

Growth of Textured Au-Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface.

XAFS Investigation of Nanoparticle Formation in <sup>64</sup>Zn<sup>+</sup> Ion Implanted and Thermo Oxidized Si.

Polarized Retroreflection from Nanoporous III-V Semiconductors.

Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles.

In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy Ion Implantation.

Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar<sup>+</sup> Ion Beam.

Polarization Properties of Photoluminescence of Anisotropic Polymer Films Containing Aligned Au Nanorods and Semiconductor Nanoparticles of Various Shape.

Reflectometry of X-ray Whispering Gallery Waves Propagating along Liquid Meniscuses.

Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape.

Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber.

Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas.

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer.

Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping.

Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction.

Diode Polarization and Resistive Switching in Metal/TlGaSe<sub>2</sub> Semiconductor/Metal Devices.

Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode.

Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications.