Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 12

Results: 25

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1621, doi. 10.1134/S1063782618120059
By:
- Asryan, L. V.;
- Zubov, F. I.;
- BalezinaPolubavkina, Yu. S.;
- Moiseev, E. I.;
- Muretova, M. E.;
- Kryzhanovskaya, N. V.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1638, doi. 10.1134/S1063782618120114
By:
- Ilin, A. S.;
- Matsukatova, A. N.;
- Forsh, P. A.;
- Vygranenko, Yu.
Publication type:
Article
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1635, doi. 10.1134/S1063782618120138
By:
- Kozlovski, V. V.;
- Lebedev, A. A.;
- Davydovskaya, K. S.;
- Lyubimova, Yu. V.
Publication type:
Article
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+-n0-n+ Diodes.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1630, doi. 10.1134/S1063782618120126
By:
- Ivanov, P. A.;
- Samsonova, T. P.;
- Potapov, A. S.
Publication type:
Article
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1616, doi. 10.1134/S1063782618120023
By:
- Agrinskaya, N. V.;
- Lebedev, A. A.;
- Lebedev, S. P.;
- Shakhov, M. A.;
- Lahderanta, E.
Publication type:
Article
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
By:
- Alekseev, P. A.;
- Dunaevskiy, M. S.;
- Mikhailov, A. O.;
- Lebedev, S. P.;
- Lebedev, A. A.;
- Ilkiv, I. V.;
- Khrebtov, A. I.;
- Bouravleuv, A. D.;
- Cirlin, G. E.
Publication type:
Article
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1607, doi. 10.1134/S1063782618120084
By:
- Fefelov, S. A.;
- Kazakova, L. P.;
- Bogoslovskiy, N. A.;
- Tsendin, K. D.
Publication type:
Article
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1603, doi. 10.1134/S106378261812014X
By:
- Mamutin, V. V.;
- Ilyinskaya, N. D.;
- Usikova, A. A.;
- Lyutetskiy, A. V.
Publication type:
Article
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1595, doi. 10.1134/S1063782618120217
By:
- Shashkin, I. S.;
- Soboleva, O. S.;
- Gavrina, P. S.;
- Zolotarev, V. V.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163
By:
- Maremyanin, K. V.;
- Ikonnikov, A. V.;
- Bovkun, L. S.;
- Rumyantsev, V. V.;
- Chizhevskii, E. G.;
- Zasavitskii, I. I.;
- Gavrilenko, V. I.
Publication type:
Article
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1586, doi. 10.1134/S1063782618120230
By:
- Spirin, K. E.;
- Gaponova, D. M.;
- Marem’yanin, K. V.;
- Rumyantsev, V. V.;
- Gavrilenko, V. I.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.
Publication type:
Article
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1581, doi. 10.1134/S1063782618120199
By:
- Sablikov, V. A.;
- Tkach, Yu. Ya.
Publication type:
Article
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1573, doi. 10.1134/S1063782618120254
By:
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Solar Cell Based on Core/Shell Nanowires.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229
By:
- Sibirev, N. V.;
- Kotlyar, K. P.;
- Koryakin, A. A.;
- Shtrom, I. V.;
- Ubiivovk, E. V.;
- Soshnikov, I. P.;
- Reznik, R. R.;
- Bouravleuv, A. D.;
- Cirlin, G. E.
Publication type:
Article
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205
By:
- Samartsev, I. V.;
- Nekorkin, S. M.;
- Zvonkov, B. N.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Pashenkin, I. J.;
- Dikareva, N. V.;
- Chigineva, A. B.
Publication type:
Article
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1559, doi. 10.1134/S1063782618120072
By:
- Erofeeva, I. V.;
- Dorokhin, M. V.;
- Zdoroveyshchev, A. V.;
- Kuznetsov, Yu. M.;
- Popov, A. A.;
- Lantsev, E. A.;
- Boryakov, A. V.;
- Kotomina, V. E.
Publication type:
Article
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1551, doi. 10.1134/S1063782618120102
By:
- Gudina, S. V.;
- Arapov, Yu. G.;
- Ilchenko, E. I.;
- Neverov, V. N.;
- Savelyev, A. P.;
- Podgornykh, S. M.;
- Shelushinina, N. G.;
- Yakunin, M. V.;
- Vasil’evskii, I. S.;
- Vinichenko, A. N.
Publication type:
Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
By:
- Baidus, N. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Reunov, D. G.;
- Shaleev, M. V.;
- Yunin, P. A.;
- Yurasov, D. V.
Publication type:
Article
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1540, doi. 10.1134/S1063782618120242
By:
- Tikhov, S. V.;
- Gorshkov, O. N.;
- Antonov, I. N.;
- Tetelbaum, D. I.;
- Mikhaylov, A. N.;
- Belov, A. I.;
- Morozov, A. I.;
- Karakolis, P.;
- Dimitrakis, P.
Publication type:
Article
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1534, doi. 10.1134/S1063782618120187
By:
- Polischuk, O. V.;
- Fateev, D. V.;
- Popov, V. V.
Publication type:
Article
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175
By:
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Sobolev, M. S.;
- Nikitina, E. V.;
- Shubina, K. Yu.;
- Berezovskaia, T. N.;
- Shtrom, I. V.;
- Bouravleuv, A. D.
Publication type:
Article
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096
By:
- Gorshkov, A. P.;
- Volkova, N. S.;
- Pavlov, D. A.;
- Usov, Yu. V.;
- Istomin, L. A.;
- Levichev, S. B.
Publication type:
Article
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1518, doi. 10.1134/S1063782618120266
By:
- Venediktov, M. M.;
- Tarasova, E. A.;
- Bozhen’kina, A. D.;
- Obolensky, S. V.;
- Elesin, V. V.;
- Chukov, G. V.;
- Metelkin, I. O.;
- Krevskiy, M. A.;
- Dukov, D. I.;
- Fefelov, A. G.
Publication type:
Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
By:
- Mansurov, V. G.;
- Galitsyn, Yu. G.;
- Malin, T. V.;
- Teys, S. A.;
- Fedosenko, E. V.;
- Kozhukhov, A. S.;
- Zhuravlev, K. S.;
- Cora, Ildikó;
- Pécz, Béla
Publication type:
Article
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1505, doi. 10.1134/S1063782618120035
By:
- Akimov, A. N.;
- Klimov, A. E.;
- Epov, V. S.
Publication type:
Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 12

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.

Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p<sup>+</sup>-n<sub>0</sub>-n<sup>+</sup> Diodes.

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.

All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.

Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.

On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.

Solar Cell Based on Core/Shell Nanowires.

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.

Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.

Behavioral Features of MIS Memristors with a Si<sub>3</sub>N<sub>4</sub> Nanolayer Fabricated on a Conductive Si Substrate.

Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.

Formation of a Graphene-Like SiN Layer on the Surface Si(111).

Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.