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Results: 25

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1638, doi. 10.1134/S1063782618120114
By:
- Ilin, A. S.;
- Matsukatova, A. N.;
- Forsh, P. A.;
- Vygranenko, Yu.
Publication type:
Article
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1635, doi. 10.1134/S1063782618120138
By:
- Kozlovski, V. V.;
- Lebedev, A. A.;
- Davydovskaya, K. S.;
- Lyubimova, Yu. V.
Publication type:
Article
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1621, doi. 10.1134/S1063782618120059
By:
- Asryan, L. V.;
- Zubov, F. I.;
- BalezinaPolubavkina, Yu. S.;
- Moiseev, E. I.;
- Muretova, M. E.;
- Kryzhanovskaya, N. V.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+-n0-n+ Diodes.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1630, doi. 10.1134/S1063782618120126
By:
- Ivanov, P. A.;
- Samsonova, T. P.;
- Potapov, A. S.
Publication type:
Article
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1616, doi. 10.1134/S1063782618120023
By:
- Agrinskaya, N. V.;
- Lebedev, A. A.;
- Lebedev, S. P.;
- Shakhov, M. A.;
- Lahderanta, E.
Publication type:
Article
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1586, doi. 10.1134/S1063782618120230
By:
- Spirin, K. E.;
- Gaponova, D. M.;
- Marem’yanin, K. V.;
- Rumyantsev, V. V.;
- Gavrilenko, V. I.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.
Publication type:
Article
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047
By:
- Alekseev, P. A.;
- Dunaevskiy, M. S.;
- Mikhailov, A. O.;
- Lebedev, S. P.;
- Lebedev, A. A.;
- Ilkiv, I. V.;
- Khrebtov, A. I.;
- Bouravleuv, A. D.;
- Cirlin, G. E.
Publication type:
Article
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1603, doi. 10.1134/S106378261812014X
By:
- Mamutin, V. V.;
- Ilyinskaya, N. D.;
- Usikova, A. A.;
- Lyutetskiy, A. V.
Publication type:
Article
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1595, doi. 10.1134/S1063782618120217
By:
- Shashkin, I. S.;
- Soboleva, O. S.;
- Gavrina, P. S.;
- Zolotarev, V. V.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163
By:
- Maremyanin, K. V.;
- Ikonnikov, A. V.;
- Bovkun, L. S.;
- Rumyantsev, V. V.;
- Chizhevskii, E. G.;
- Zasavitskii, I. I.;
- Gavrilenko, V. I.
Publication type:
Article
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1607, doi. 10.1134/S1063782618120084
By:
- Fefelov, S. A.;
- Kazakova, L. P.;
- Bogoslovskiy, N. A.;
- Tsendin, K. D.
Publication type:
Article
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1581, doi. 10.1134/S1063782618120199
By:
- Sablikov, V. A.;
- Tkach, Yu. Ya.
Publication type:
Article
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1573, doi. 10.1134/S1063782618120254
By:
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Solar Cell Based on Core/Shell Nanowires.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229
By:
- Sibirev, N. V.;
- Kotlyar, K. P.;
- Koryakin, A. A.;
- Shtrom, I. V.;
- Ubiivovk, E. V.;
- Soshnikov, I. P.;
- Reznik, R. R.;
- Bouravleuv, A. D.;
- Cirlin, G. E.
Publication type:
Article
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205
By:
- Samartsev, I. V.;
- Nekorkin, S. M.;
- Zvonkov, B. N.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Pashenkin, I. J.;
- Dikareva, N. V.;
- Chigineva, A. B.
Publication type:
Article
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1559, doi. 10.1134/S1063782618120072
By:
- Erofeeva, I. V.;
- Dorokhin, M. V.;
- Zdoroveyshchev, A. V.;
- Kuznetsov, Yu. M.;
- Popov, A. A.;
- Lantsev, E. A.;
- Boryakov, A. V.;
- Kotomina, V. E.
Publication type:
Article
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1551, doi. 10.1134/S1063782618120102
By:
- Gudina, S. V.;
- Arapov, Yu. G.;
- Ilchenko, E. I.;
- Neverov, V. N.;
- Savelyev, A. P.;
- Podgornykh, S. M.;
- Shelushinina, N. G.;
- Yakunin, M. V.;
- Vasil’evskii, I. S.;
- Vinichenko, A. N.
Publication type:
Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
By:
- Baidus, N. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Krasilnik, Z. F.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Novikov, A. V.;
- Rykov, A. V.;
- Reunov, D. G.;
- Shaleev, M. V.;
- Yunin, P. A.;
- Yurasov, D. V.
Publication type:
Article
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1540, doi. 10.1134/S1063782618120242
By:
- Tikhov, S. V.;
- Gorshkov, O. N.;
- Antonov, I. N.;
- Tetelbaum, D. I.;
- Mikhaylov, A. N.;
- Belov, A. I.;
- Morozov, A. I.;
- Karakolis, P.;
- Dimitrakis, P.
Publication type:
Article
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1534, doi. 10.1134/S1063782618120187
By:
- Polischuk, O. V.;
- Fateev, D. V.;
- Popov, V. V.
Publication type:
Article
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175
By:
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Sobolev, M. S.;
- Nikitina, E. V.;
- Shubina, K. Yu.;
- Berezovskaia, T. N.;
- Shtrom, I. V.;
- Bouravleuv, A. D.
Publication type:
Article
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096
By:
- Gorshkov, A. P.;
- Volkova, N. S.;
- Pavlov, D. A.;
- Usov, Yu. V.;
- Istomin, L. A.;
- Levichev, S. B.
Publication type:
Article
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1518, doi. 10.1134/S1063782618120266
By:
- Venediktov, M. M.;
- Tarasova, E. A.;
- Bozhen’kina, A. D.;
- Obolensky, S. V.;
- Elesin, V. V.;
- Chukov, G. V.;
- Metelkin, I. O.;
- Krevskiy, M. A.;
- Dukov, D. I.;
- Fefelov, A. G.
Publication type:
Article
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1505, doi. 10.1134/S1063782618120035
By:
- Akimov, A. N.;
- Klimov, A. E.;
- Epov, V. S.
Publication type:
Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
By:
- Mansurov, V. G.;
- Galitsyn, Yu. G.;
- Malin, T. V.;
- Teys, S. A.;
- Fedosenko, E. V.;
- Kozhukhov, A. S.;
- Zhuravlev, K. S.;
- Cora, Ildikó;
- Pécz, Béla
Publication type:
Article

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.

Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p<sup>+</sup>-n<sub>0</sub>-n<sup>+</sup> Diodes.

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.

All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.

Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.

On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.

Solar Cell Based on Core/Shell Nanowires.

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.

Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.

Behavioral Features of MIS Memristors with a Si<sub>3</sub>N<sub>4</sub> Nanolayer Fabricated on a Conductive Si Substrate.

Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.

Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.

Formation of a Graphene-Like SiN Layer on the Surface Si(111).