Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 11

Results: 26

Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1500, doi. 10.1134/S1063782618110040

By:

Bekin, N. A.

Publication type:

Article

Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1495, doi. 10.1134/S1063782618110143

By:

Kudryatvsev, K. E.;
Dubinov, A. A.;
Aleshkin, V. Ya.;
Yurasov, D. V.;
Gorlachuk, P. V.;
Ryaboshtan, Yu. L.;
Marmalyuk, A. A.;
Novikov, A. V.;
Krasilnik, Z. F.

Publication type:

Article

Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1491, doi. 10.1134/S1063782618110088

By:

Drozdov, Yu. N.;
Khrikin, O. I.;
Yunin, P. A.

Publication type:

Article

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1484, doi. 10.1134/S1063782618110039

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Shamirzaev, T. S.

Publication type:

Article

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1477, doi. 10.1134/S106378261811012X

By:

Khananova, A. V.;
Obolensky, S. V.

Publication type:

Article

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1473, doi. 10.1134/S1063782618110180

By:

Okhapkin, A. I.;
Yunin, P. A.;
Drozdov, M. N.;
Kraev, S. A.;
Skorokhodov, E. V.;
Shashkin, V. I.

Publication type:

Article

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1457, doi. 10.1134/S1063782618110222

By:

Rudin, S. A.;
Smagina, Zh. V.;
Zinovyev, V. A.;
Novikov, P. L.;
Nenashev, A. V.;
Rodyakina, E. E.;
Dvurechenskii, A. V.

Publication type:

Article

Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1448, doi. 10.1134/S1063782618110192

By:

Pavelyev, D. G.;
Vasilev, A. P.;
Kozlov, V. A.;
Obolenskaya, E. S.

Publication type:

Article

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283

By:

Zhukov, A. E.;
Gordeev, N. Yu.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Serin, A. A.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.

Publication type:

Article

Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1468, doi. 10.1134/S1063782618110076

By:

Dobretsova, A. A.;
Kvon, Z. D.;
Braginskii, L. S.;
Entin, M. V.;
Mikhailov, N. N.

Publication type:

Article

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258

By:

Cirlin, G. E.;
Reznik, R. R.;
Samsonenko, Yu. B.;
Khrebtov, A. I.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Kirilenko, D. A.;
Kryzhanovskaya, N. V.

Publication type:

Article

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo-Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1407, doi. 10.1134/S1063782618110209

By:

Puzanov, A. S.;
Obolenskiy, S. V.;
Kozlov, V. A.

Publication type:

Article

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1442, doi. 10.1134/S1063782618110167

By:

Novikov, A. V.;
Yurasov, D. V.;
Morozova, E. E.;
Skorohodov, E. V.;
Verbus, V. A.;
Yablonskiy, A. N.;
Baidakova, N. A.;
Gusev, N. S.;
Kudryavtsev, K. E.;
Nezhdanov, A. V.;
Mashin, A. I.

Publication type:

Article

Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1437, doi. 10.1134/S1063782618110064

By:

Derebezov, I. A.;
Gaisler, V. A.;
Gaisler, A. V.;
Dmitriev, D. V.;
Toropov, A. I.;
von Helversen, M.;
de la Haye, C.;
Bounouar, S.;
Reitzenstein, S.

Publication type:

Article

Study of the Structural and Morphological Properties of HPHT Diamond Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1432, doi. 10.1134/S1063782618110271

By:

Yunin, P. A.;
Volkov, P. V.;
Drozdov, Yu. N.;
Koliadin, A. V.;
Korolev, S. A.;
Radischev, D. B.;
Surovegina, E. A.;
Shashkin, V. I.

Publication type:

Article

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210

By:

Reznik, R. R.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Lebedev, S. P.;
Lebedev, A. A.;
Kirilenko, D. A.;
Alexeev, P. A.;
Cirlin, G. E.

Publication type:

Article

Modification of the Ferromagnetic Properties of Si1 -xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1424, doi. 10.1134/S1063782618110179

By:

Novodvorsky, O. A.;
Mikhalevsky, V. A.;
Gusev, D. S.;
Lotin, A. A.;
Parshina, L. S.;
Khramova, O. D.;
Cherebylo, E. A.;
Drovosekov, A. B.;
Rylkov, V. V.;
Nikolaev, S. N.;
Chernoglazov, K. Yu.;
Maslakov, K. I.

Publication type:

Article

Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1420, doi. 10.1134/S1063782618110155

By:

Morozov, K. M.;
Ivanov, K. A.;
Selenin, N.;
Mikhrin, S.;
de Sa Pereira, D.;
Menelaou, C.;
Monkman, A. P.;
Kaliteevski, M. A.

Publication type:

Article

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106

By:

Kalentyeva, I. L.;
Vikhrova, O. V.;
Danilov, Yu. A.;
Zvonkov, B. N.;
Kudrin, A. V.;
Antonov, I. N.

Publication type:

Article

Spinodal Decomposition in InSb/AlAs Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1392, doi. 10.1134/S1063782618110027

By:

Abramkin, D. S.;
Bakarov, A. K.;
Gutakovskii, A. K.;
Shamirzaev, T. S.

Publication type:

Article

Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X

By:

Yunin, P. A.;
Drozdov, Yu. N.;
Khrykin, O. I.;
Grigoryev, V. A.

Publication type:

Article

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1403, doi. 10.1134/S106378261811009X

By:

Gudina, S. V.;
Bogolyubskii, A. S.;
Neverov, V. N.;
Shelushinina, N. G.;
Yakunin, M. V.

Publication type:

Article

Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1386, doi. 10.1134/S1063782618110052

By:

Bovkun, L. S.;
Maremyanin, K. V.;
Ikonnikov, A. V.;
Spirin, K. E.;
Aleshkin, V. Ya.;
Potemski, M.;
Piot, B. A.;
Orlita, M.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Gavrilenko, V. I.

Publication type:

Article

Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1380, doi. 10.1134/S1063782618110118

By:

Khabibullin, R. A.;
Shchavruk, N. V.;
Ponomarev, D. S.;
Ushakov, D. V.;
Afonenko, A. A.;
Vasil’evskii, I. S.;
Zaycev, A. A.;
Danilov, A. I.;
Volkov, O. Yu.;
Pavlovskiy, V. V.;
Maremyanin, K. V.;
Gavrilenko, V. I.

Publication type:

Article

Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1375, doi. 10.1134/S1063782618110234

By:

Rumyantsev, V. V.;
Kulikov, N. S.;
Kadykov, A. M.;
Fadeev, M. A.;
Ikonnikov, A. V.;
Kazakov, A. S.;
Zholudev, M. S.;
Aleshkin, V. Ya.;
Utochkin, V. V.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Morozov, S. V.;
Gavrilenko, V. I.

Publication type:

Article

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 -xCdxTe Layers.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1369, doi. 10.1134/S1063782618110131

By:

Kozlov, D. V.;
Rumyantsev, V. V.;
Morozov, S. V.;
Kadykov, A. M.;
Fadeev, M. A.;
Hübers, H.-W.;
Gavrilenko, V. I.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 11

Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond.

Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.

Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation.

Plasma Chemical Etching of Gallium Arsenide in C<sub>2</sub>F<sub>5</sub>Cl-Based Inductively Coupled Plasma.

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface.

Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices.

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.

Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells.

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo-Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation.

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.

Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots.

Study of the Structural and Morphological Properties of HPHT Diamond Substrates.

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Modification of the Ferromagnetic Properties of Si<sub>1 -</sub><sub>x</sub>Mn<sub>x</sub> Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure.

Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region.

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.

Spinodal Decomposition in InSb/AlAs Heterostructures.

Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase.

Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.

Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.

Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells.

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg<sub>1 -</sub><sub>x</sub>Cd<sub>x</sub>Te Layers.