Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 9

Results: 23

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1225, doi. 10.1134/S1063782618090026
By:
- Anisimov, A. N.;
- Wolfson, A. A.;
- Mokhov, E. N.
Publication type:
Article
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1221, doi. 10.1134/S1063782618090038
By:
- Dubinov, A. A.;
- Aleshkin, V. Ya.;
- Morozov, S. V.
Publication type:
Article
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1215, doi. 10.1134/S1063782618090099
By:
- Kunitsyna, E. V.;
- Andreev, I. A.;
- Konovalov, G. G.;
- Ivanov, E. V.;
- Pivovarova, A. A.;
- Il’inskaya, N. D.;
- Yakovlev, Yu. P.
Publication type:
Article
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1160, doi. 10.1134/S1063782618090051
By:
- Castro, R. A.;
- Grabko, G. I.;
- Kononov, A. A.
Publication type:
Article
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1156, doi. 10.1134/S1063782618090075
By:
- Kolodeznyi, E. S.;
- Kurochkin, A. S.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Savelyev, A. V.;
- Egorov, A. Yu.;
- Denisov, D. V.
Publication type:
Article
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1150, doi. 10.1134/S1063782618090191
By:
- Smagina, Zh. V.;
- Zinovyev, V. A.;
- Krivyakin, G. K.;
- Rodyakina, E. E.;
- Kuchinskaya, P. A.;
- Fomin, B. I.;
- Yablonskiy, A. N.;
- Stepikhova, M. V.;
- Novikov, A. V.;
- Dvurechenskii, A. V.
Publication type:
Article
Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization).
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1145, doi. 10.1134/S106378261809004X
By:
- Ivanov, K. A.;
- Gubaydullin, A. R.;
- Kaliteevski, M. A.
Publication type:
Article
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1137, doi. 10.1134/S1063782618090087
By:
- Kondratenko, T. S.;
- Smirnov, M. S.;
- Ovchinnikov, O. V.;
- Shabunya-Klyachkovskaya, E. V.;
- Matsukovich, A. S.;
- Zvyagin, A. I.;
- Vinokur, Y. A.
Publication type:
Article
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1203, doi. 10.1134/S1063782618090063
By:
- Klochko, N. P.;
- Kopach, V. R.;
- Khrypunov, G. S.;
- Korsun, V. E.;
- Lyubov, V. M.;
- Zhadan, D. O.;
- Otchenashko, A. N.;
- Kirichenko, M. V.;
- Khrypunov, M. G.
Publication type:
Article
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1198, doi. 10.1134/S1063782618090130
By:
- Rut’kov, E. V.;
- Gall, N. R.
Publication type:
Article
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1193, doi. 10.1134/S106378261809021X
By:
- Teplyakov, M. P.;
- Ken, O. S.;
- Goryachev, D. N.;
- Sreseli, O. M.
Publication type:
Article
Effect of Injection Depletion in p-Si-n-(Si2)1 -x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1188, doi. 10.1134/S1063782618090142
By:
- Saidov, A. S.;
- Leyderman, A. Yu.;
- Usmonov, Sh. N.;
- Amonov, K. A.
Publication type:
Article
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1178, doi. 10.1134/S1063782618090233
By:
- Volodin, V. A.;
- Rui, Zhang;
- Krivyakin, G. K.;
- Antonenko, A. Kh.;
- Stoffel, M.;
- Rinnert, H.;
- Vergnat, M.
Publication type:
Article
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 -xZnxTe Heterojunctions.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1171, doi. 10.1134/S1063782618090117
By:
- Orletskyi, I. G.;
- Ilashchuk, M. I.;
- Solovan, M. N.;
- Maryanchuk, P. D.;
- Parfenyuk, O. A.;
- Maistruk, E. V.;
- Nichyi, S. V.
Publication type:
Article
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1163, doi. 10.1134/S1063782618090154
By:
- Seredin, P. V.;
- Lenshin, A. S.;
- Fedyukin, A. V.;
- Goloshchapov, D. L.;
- Lukin, A. N.;
- Arsentyev, I. N.;
- Zhabotinsky, A. V.
Publication type:
Article
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1129, doi. 10.1134/S1063782618090129
By:
- Orlov, M. L.;
- Volkova, N. S.;
- Ivina, N. L.;
- Orlov, L. K.
Publication type:
Article
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1123, doi. 10.1134/S1063782618090208
By:
- Stovpiaga, E. Yu.;
- Eurov, D. A.;
- Kurdyukov, D. A.;
- Smirnov, A. N.;
- Yagovkina, M. A.;
- Yakovlev, D. R.;
- Golubev, V. G.
Publication type:
Article
Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1118, doi. 10.1134/S106378261809018X
By:
- Sitnikov, A. V.;
- Zhilova, O. V.;
- Babkina, I. V.;
- Makagonov, V. A.;
- Kalinin, Yu. E.;
- Remizova, O. I.
Publication type:
Article
Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1114, doi. 10.1134/S1063782618090166
By:
- Shiryaev, A. A.;
- Vorotyntsev, V. M.;
- Shobolov, E. L.
Publication type:
Article
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1110, doi. 10.1134/S1063782618090178
By:
- Shkumbatjuk, P. S.
Publication type:
Article
Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1104, doi. 10.1134/S1063782618090245
By:
- Yafarov, R. K.
Publication type:
Article
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy-Oxygen Complexes in Irradiated Silicon Crystals.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1097, doi. 10.1134/S1063782618090221
By:
- Tolkacheva, E. A.;
- Markevich, V. P.;
- Murin, L. I.
Publication type:
Article
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1091, doi. 10.1134/S1063782618090105
By:
- Okulich, E. V.;
- Okulich, V. I.;
- Tetelbaum, D. I.
Publication type:
Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 9

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method.

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells.

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.

Low-Frequency Dielectric Relaxation in Iron-Doped Ge<sub>28.5</sub>Pb<sub>15</sub>S<sub>56.5</sub> Glassy System.

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface.

Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization).

Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid.

Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method.

Intercalation of C<sub>60</sub> Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide.

Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si.

Effect of Injection Depletion in p-Si-n-(Si<sub>2</sub>)<sub>1 -</sub><sub>x</sub>(ZnSe)<sub>x</sub> (0 ≤ x ≤ 0.01) Heterostructure.

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO<sub>2</sub> Films.

Electrical Properties and Energy Parameters of n-FeS<sub>2</sub>/p-Cd<sub>1 -</sub><sub>x</sub>Zn<sub>x</sub>Te Heterojunctions.

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.

Template Synthesis of Monodisperse Spherical Nanocomposite SiO<sub>2</sub>/GaN:Eu<sup>3+</sup> Particles.

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films.

Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.

Superficial Defect Formation in CdTe under the Radiation Effect of a CO<sub>2</sub> Laser.

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals.

Optical Properties and the Mechanism of the Formation of V<sub>2</sub>O<sub>2</sub> and V<sub>3</sub>O<sub>2</sub> Vacancy-Oxygen Complexes in Irradiated Silicon Crystals.

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions.