Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 5

Results: 35

Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 593, doi. 10.1134/S1063782618050214

By:

Mikoushkin, V. M.;
Bryzgalov, V. V.;
Nikonov, S. Yu.;
Solonitsyna, A. P.;
Marchenko, D. E.

Publication type:

Article

Spectroscopy of PbS and PbSe Quantum Dots in Fluorine Phosphate Glasses.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 558, doi. 10.1134/S1063782618050172

By:

Kuznetsova, M. S.;
Cherbunin, R. V.;
Litvyak, V. M.;
Kolobkova, E. V.

Publication type:

Article

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 618, doi. 10.1134/S1063782618050147

By:

Kazantsev, D. M.;
Akhundov, I. O.;
Alperovich, V. L.;
Shwartz, N. L.;
Kozhukhov, A. S.;
Latyshev, A. V.

Publication type:

Article

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251

By:

Reznik, R. R.;
Kotlyar, K. P.;
Soshnikov, I. P.;
Kukushkin, S. A.;
Osipov, A. V.;
Cirlin, G. E.

Publication type:

Article

Air-Oxidation of Nb Nano-Films.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 678, doi. 10.1134/S1063782618050196

By:

Lubenchenko, A. V.;
Batrakov, A. A.;
Ivanov, D. A.;
Lubenchenko, O. I.;
Lashkov, I. A.;
Pavolotsky, A. B.;
Schleicher, B.;
Albert, N.;
Nielsch, K.

Publication type:

Article

Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 675, doi. 10.1134/S1063782618050305

By:

Smolyarova, T. E.;
Lukyanenko, A. V.;
Tarasov, A. S.;
Sokolov, A. E.

Publication type:

Article

Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 671, doi. 10.1134/S1063782618050093

By:

Gladskikh, I. A.;
Gushchin, M. G.;
Vartanyan, T. A.

Publication type:

Article

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 667, doi. 10.1134/S1063782618050123

By:

Jmerik, V. N.;
Shubina, T. V.;
Nechaev, D. V.;
Semenov, A. N.;
Kirilenko, D. A.;
Davydov, V. Yu.;
Smirnov, A. N.;
Eliseev, I. A.;
Posina, G.;
Ivanov, S. V.

Publication type:

Article

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354

By:

Vasev, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.;
Bakarov, A. K.;
Toropov, A. I.

Publication type:

Article

Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into <italic>p</italic>-Si(001).

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 654, doi. 10.1134/S1063782618050330

By:

Tarasov, I. A.;
Rautskii, M. V.;
Yakovlev, I. A.;
Volochaev, M. N.

Publication type:

Article

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 660, doi. 10.1134/S1063782618050342

By:

Timoshnev, S. N.;
Mizerov, A. M.;
Sobolev, M. S.;
Nikitina, E. V.

Publication type:

Article

Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 645, doi. 10.1134/S106378261805024X

By:

Privezentsev, V. V.;
Makunin, A. V.;
Batrakov, A. A.;
Ksenich, S. V.;
Goryachev, A. V.

Publication type:

Article

Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056

By:

Evropeytsev, E. A.;
Semenov, A. N.;
Nechaev, D. V.;
Jmerik, V. N.;
Kaibyshev, V. Kh.;
Troshkov, S. I.;
Brunkov, P. N.;
Usikova, A. A.;
Ivanov, S. V.;
Toropov, A. A.

Publication type:

Article

Polymer Composition Influence on Optical Properties of Laser-Generated Au Nanoparticles Based Nanocomposites.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 583, doi. 10.1134/S1063782618050366

By:

Zulina, N. A.;
Achor, U. S.;
Kniazev, K. I.

Publication type:

Article

Сoncentric GaAs Nanorings Growth Modelling.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 639, doi. 10.1134/S1063782618050226

By:

Nastovjak, A. G.;
Neizvestny, I. G.;
Vasilenko, M. A.;
Shwartz, N. L.

Publication type:

Article

Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 636, doi. 10.1134/S1063782618050202

By:

Lukyanenko, A. V.;
Smolyarova, T. E.

Publication type:

Article

Fabrication of Silicon Nanostructures for Application in Photonics.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 632, doi. 10.1134/S1063782618050135

By:

Kamalieva, A. N.;
Toropov, N. A.;
Vartanyan, T. A.;
Baranov, M. A.;
Parfenov, P. S.;
Bogdanov, K. V.;
Zharova, Y. A.;
Tolmachev, V. A.

Publication type:

Article

New Method of Porous Ge Layer Fabrication: Structure and Optical Properties.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 628, doi. 10.1134/S1063782618050111

By:

Gorokhov, E. B.;
Astankova, K. N.;
Azarov, I. A.;
Volodin, V. A.;
Latyshev, A. V.

Publication type:

Article

Ion Synthesis: Si-Ge Quantum Dots.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 625, doi. 10.1134/S1063782618050081

By:

Gerasimenko, N. N.;
Balakleyskiy, N. S.;
Volokhovskiy, A. D.;
Smirnov, D. I.;
Zaporozhan, O. A.

Publication type:

Article

Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 615, doi. 10.1134/S1063782618050238

By:

Ploog, K. H.

Publication type:

Article

Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 587, doi. 10.1134/S1063782618050044

By:

Bodunov, E. N.;
Simões Gamboa, A. L.

Publication type:

Article

Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 612, doi. 10.1134/S106378261805007X

By:

Fomin, M. A.;
Chernev, A. L.;
Bagraev, N. T.;
Klyachkin, L. E.;
Emelyanov, A. K.;
Dubina, M. V.

Publication type:

Article

GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 609, doi. 10.1134/S1063782618050020

By:

Alekseev, P. A.;
Sharov, V. A.;
Geydt, P.;
Dunaevskiy, M. S.;
Soshnikov, I. P.;
Reznik, R. R.;
Lysak, V. V.;
Lähderanta, E.;
Cirlin, G. E.

Publication type:

Article

The Features of GaAs Nanowire SEM Images.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 605, doi. 10.1134/S1063782618050317

By:

Soshnikov, I. P.;
Kotlyar, K. P.;
Bert, N. A.;
Kirilenko, D. A.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299

By:

Shtrom, I. V.;
Filosofov, N. G.;
Agekian, V. F.;
Smirnov, M. B.;
Serov, A. Yu.;
Reznik, R. R.;
Kudryavtsev, K. E.;
Cirlin, G. E.

Publication type:

Article

TiN Nanoporous Electrode Covered by Single Cell as Bio-Electronic Sensor of Radiation Hazard.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 600, doi. 10.1134/S1063782618050329

By:

Stupin, D. D.

Publication type:

Article

Geometry Optimization and Charge Density Distribution of Single Layer of ZN-Based Metal-Organic Framework.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 597, doi. 10.1134/S1063782618050287

By:

Senkevich, N. Y.;
Vrubel, I. I.;
Polozkov, R. G.;
Shelykh, I. A.

Publication type:

Article

Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 575, doi. 10.1134/S1063782618050160

By:

Kulik, L. V.;
Gorbunov, A. V.;
Zhuravlev, A. S.;
Timofeev, V. B.;
Kukushkin, I. V.

Publication type:

Article

Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 572, doi. 10.1134/S1063782618050263

By:

Rodina, A. V.;
Golovatenko, A. A.;
Shornikova, E. V.;
Yakovlev, D. R.;
Efros, Al. L.

Publication type:

Article

Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 590, doi. 10.1134/S1063782618050068

By:

Filatov, D. O.;
Guseinov, D. V.;
Chalkov, V. Yu.;
Denisov, S. A.;
Shengurov, V. G.

Publication type:

Article

The Impact of the Substrate Material on the Optical Properties of 2D WSe2 Monolayers.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 565, doi. 10.1134/S1063782618050275

By:

Schneider, L. M.;
Lippert, S.;
Kuhnert, J.;
Renaud, D.;
Kang, K. N.;
Ajayi, O.;
Halbich, M.-u.;
Abdulmunem, O. M.;
Lin, X.;
Hassoon, K.;
Edalati-Boostan, S.;
Kim, Y. D.;
Heimbrodt, W.;
Yang, E. H.;
Hone, J. C.;
Rahimi-Iman, A.

Publication type:

Article

Plasmon-Excitonic Polaritons in Metal-Semiconductor Nanostructures with Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 579, doi. 10.1134/S1063782618050159

By:

Kosobukin, V. A.

Publication type:

Article

Calculation of Energy States of Excitons in Square Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 551, doi. 10.1134/S1063782618050032

By:

Belov, P. A.

Publication type:

Article

Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 554, doi. 10.1134/S106378261805010X

By:

Golovatenko, A. A.;
Semina, M. A.;
Rodina, A. V.;
Shubina, T. V.

Publication type:

Article

Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 562, doi. 10.1134/S1063782618050184

By:

Loginov, D. K.;
Donets, A. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 5

Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer.

Spectroscopy of PbS and PbSe Quantum Dots in Fluorine Phosphate Glasses.

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation.

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.

Air-Oxidation of Nb Nano-Films.

Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine.

Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold.

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.

Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi<sub>2</sub> Nanocrystals Into <italic>p</italic>-Si(001).

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.

Nanoparticle Formation in Zn<sup>+</sup> and O<sup>+</sup> Ion Sequentially Implanted SiO<sub>2</sub> Film.

Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.

Polymer Composition Influence on Optical Properties of Laser-Generated Au Nanoparticles Based Nanocomposites.

Сoncentric GaAs Nanorings Growth Modelling.

Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography.

Fabrication of Silicon Nanostructures for Application in Photonics.

New Method of Porous Ge Layer Fabrication: Structure and Optical Properties.

Ion Synthesis: Si-Ge Quantum Dots.

Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision.

Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function.

Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures.

GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells.

The Features of GaAs Nanowire SEM Images.

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.

TiN Nanoporous Electrode Covered by Single Cell as Bio-Electronic Sensor of Radiation Hazard.

Geometry Optimization and Charge Density Distribution of Single Layer of ZN-Based Metal-Organic Framework.

Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure.

Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets.

Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands.

The Impact of the Substrate Material on the Optical Properties of 2D WSe<sub>2</sub> Monolayers.

Plasmon-Excitonic Polaritons in Metal-Semiconductor Nanostructures with Quantum Wells.

Calculation of Energy States of Excitons in Square Quantum Wells.

Biexciton Binding Energy in Spherical Quantum Dots with Γ<sub>8</sub> Valence Band.

Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells.