Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 2
1
- Semiconductors, 2018, v. 52, n. 2, p. 160, doi. 10.1134/S1063782618020057
- Kažukauskas, V.;
- Garbačauskas, R.;
- Savicki, S.
- Article
2
- Semiconductors, 2018, v. 52, n. 2, p. 165, doi. 10.1134/S1063782618020173
- Sobolev, M.;
- Soldatenkov, F.
- Article
3
- Semiconductors, 2018, v. 52, n. 2, p. 143, doi. 10.1134/S1063782618020045
- Kalygina, V.;
- Remizova, I.;
- Tolbanov, O.
- Article
4
- Semiconductors, 2018, v. 52, n. 2, p. 195, doi. 10.1134/S1063782618020112
- Pavlov, N.;
- Zegrya, G.;
- Zegrya, A.;
- Bugrov, V.
- Article
5
- Semiconductors, 2018, v. 52, n. 2, p. 150, doi. 10.1134/S1063782618020100
- Article
6
- Semiconductors, 2018, v. 52, n. 2, p. 156, doi. 10.1134/S1063782618020094
- Mustafaeva, S.;
- Asadov, S.;
- Kerimova, E.
- Article
7
- Semiconductors, 2018, v. 52, n. 2, p. 177, doi. 10.1134/S1063782618020021
- Abdullin, Kh.;
- Gritsenko, L.;
- Kumekov, S.;
- Markhabaeva, A.;
- Terukov, E.
- Article
8
- Semiconductors, 2018, v. 52, n. 2, p. 184, doi. 10.1134/S1063782618020070
- Lubyanskiy, Ya.;
- Bondarev, A.;
- Soshnikov, I.;
- Bert, N.;
- Zolotarev, V.;
- Kirilenko, D.;
- Kotlyar, K.;
- Pikhtin, N.;
- Tarasov, I.
- Article
9
- Semiconductors, 2018, v. 52, n. 2, p. 189, doi. 10.1134/S106378261802015X
- Safonov, D.;
- Vinichenko, A.;
- Kargin, N.;
- Vasil'evskii, I.
- Article
10
- Semiconductors, 2018, v. 52, n. 2, p. 172, doi. 10.1134/S1063782618020227
- Ulashkevich, Yu.;
- Kaminskiy, V.;
- Romanova, M.;
- Sharenkova, N.
- Article
11
- Semiconductors, 2018, v. 52, n. 2, p. 209, doi. 10.1134/S1063782618020148
- Article
12
- Semiconductors, 2018, v. 52, n. 2, p. 215, doi. 10.1134/S1063782618020197
- Stanchik, A.;
- Gremenok, V.;
- Bashkirov, S.;
- Tivanov, M.;
- Juškénas, R.;
- Novikov, G.;
- Giraitis, R.;
- Saad, A.
- Article
13
- Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136
- Ratnikov, V.;
- Sheglov, M.;
- Ber, B.;
- Kazantsev, D.;
- Osinnykh, I.;
- Malin, T.;
- Zhuravlev, K.
- Article
14
- Semiconductors, 2018, v. 52, n. 2, p. 226, doi. 10.1134/S1063782618020033
- Article
15
- Semiconductors, 2018, v. 52, n. 2, p. 231, doi. 10.1134/S1063782618020082
- Miroshnikov, B.;
- Miroshnikova, I.;
- Popov, A.
- Article
16
- Semiconductors, 2018, v. 52, n. 2, p. 236, doi. 10.1134/S1063782618020185
- Solovan, M.;
- Andrushchak, G.;
- Mostovyi, A.;
- Kovaliuk, T.;
- Brus, V.;
- Maryanchuk, P.
- Article
17
- Semiconductors, 2018, v. 52, n. 2, p. 248, doi. 10.1134/S1063782618020240
- Zubov, F.;
- Maximov, M.;
- Gordeev, N.;
- Polubavkina, Yu.;
- Zhukov, A.
- Article
18
- Semiconductors, 2018, v. 52, n. 2, p. 254, doi. 10.1134/S1063782618020124
- Pescherova, S.;
- Yakimov, E.;
- Nepomnyashchikh, A.;
- Pavlova, L.;
- Feklisova, O.;
- Presnyakov, R.
- Article
19
- Semiconductors, 2018, v. 52, n. 2, p. 260, doi. 10.1134/S1063782618020069
- Lotin, A.;
- Novodvorsky, O.;
- Parshina, L.;
- Khramova, O.;
- Cherebylo, E.;
- Mikhalevsky, V.
- Article
20
- Semiconductors, 2018, v. 52, n. 2, p. 242, doi. 10.1134/S1063782618020203
- Tyaginov, S.;
- Makarov, A.;
- Jech, M.;
- Vexler, M.;
- Franco, J.;
- Kaczer, B.;
- Grasser, T.
- Article
21
- Semiconductors, 2018, v. 52, n. 2, p. 264, doi. 10.1134/S1063782618020161
- Shimanskii, A.;
- Pavlyuk, T.;
- Kopytkova, S.;
- Filatov, R.;
- Gorodishcheva, A.
- Article
22
- Semiconductors, 2018, v. 52, n. 2, p. 268, doi. 10.1134/S1063782618020215
- Tyschenko, I.;
- Krivyakin, G.;
- Volodin, V.
- Article
23
- Semiconductors, 2018, v. 52, n. 2, p. 137, doi. 10.1134/S1063782618020239
- Article