Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 2

Results: 23

Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 160, doi. 10.1134/S1063782618020057

By:

Kažukauskas, V.;
Garbačauskas, R.;
Savicki, S.

Publication type:

Article

Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p- i- n Structures on the Relaxation time of Nonequilibrium Carriers.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 165, doi. 10.1134/S1063782618020173

By:

Sobolev, M.;
Soldatenkov, F.

Publication type:

Article

Conductivity of GaO-GaAs Heterojunctions.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 143, doi. 10.1134/S1063782618020045

By:

Kalygina, V.;
Remizova, I.;
Tolbanov, O.

Publication type:

Article

Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 195, doi. 10.1134/S1063782618020112

By:

Pavlov, N.;
Zegrya, G.;
Zegrya, A.;
Bugrov, V.

Publication type:

Article

Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 150, doi. 10.1134/S1063782618020100

By:

Ormont, M.;
Zvyagin, I.

Publication type:

Article

Dielectric Properties and Conductivity of Ag-Doped TlGaS Single Crystals.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 156, doi. 10.1134/S1063782618020094

By:

Mustafaeva, S.;
Asadov, S.;
Kerimova, E.

Publication type:

Article

Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 177, doi. 10.1134/S1063782618020021

By:

Abdullin, Kh.;
Gritsenko, L.;
Kumekov, S.;
Markhabaeva, A.;
Terukov, E.

Publication type:

Article

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 184, doi. 10.1134/S1063782618020070

By:

Lubyanskiy, Ya.;
Bondarev, A.;
Soshnikov, I.;
Bert, N.;
Zolotarev, V.;
Kirilenko, D.;
Kotlyar, K.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 189, doi. 10.1134/S106378261802015X

By:

Safonov, D.;
Vinichenko, A.;
Kargin, N.;
Vasil'evskii, I.

Publication type:

Article

Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 172, doi. 10.1134/S1063782618020227

By:

Ulashkevich, Yu.;
Kaminskiy, V.;
Romanova, M.;
Sharenkova, N.

Publication type:

Article

Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm).

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 209, doi. 10.1134/S1063782618020148

By:

Ryzhov, V.;
Melekh, B.

Publication type:

Article

Microstructure and Raman Scattering of CuZnSnSe Thin Films Deposited onto Flexible Metal Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 215, doi. 10.1134/S1063782618020197

By:

Stanchik, A.;
Gremenok, V.;
Bashkirov, S.;
Tivanov, M.;
Juškénas, R.;
Novikov, G.;
Giraitis, R.;
Saad, A.

Publication type:

Article

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlGaN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136

By:

Ratnikov, V.;
Sheglov, M.;
Ber, B.;
Kazantsev, D.;
Osinnykh, I.;
Malin, T.;
Zhuravlev, K.

Publication type:

Article

On the Extended Holstein-Hubbard Model for Epitaxial Graphene on Metal.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 226, doi. 10.1134/S1063782618020033

By:

Davydov, S.

Publication type:

Article

Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 231, doi. 10.1134/S1063782618020082

By:

Miroshnikov, B.;
Miroshnikova, I.;
Popov, A.

Publication type:

Article

Graphite/ p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 236, doi. 10.1134/S1063782618020185

By:

Solovan, M.;
Andrushchak, G.;
Mostovyi, A.;
Kovaliuk, T.;
Brus, V.;
Maryanchuk, P.

Publication type:

Article

Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 248, doi. 10.1134/S1063782618020240

By:

Zubov, F.;
Maximov, M.;
Gordeev, N.;
Polubavkina, Yu.;
Zhukov, A.

Publication type:

Article

Electrical Activity of Extended Defects in Multicrystalline Silicon.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 254, doi. 10.1134/S1063782618020124

By:

Pescherova, S.;
Yakimov, E.;
Nepomnyashchikh, A.;
Pavlova, L.;
Feklisova, O.;
Presnyakov, R.

Publication type:

Article

Luminescence Properties of CdZnO Thin Films.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 260, doi. 10.1134/S1063782618020069

By:

Lotin, A.;
Novodvorsky, O.;
Parshina, L.;
Khramova, O.;
Cherebylo, E.;
Mikhalevsky, V.

Publication type:

Article

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 242, doi. 10.1134/S1063782618020203

By:

Tyaginov, S.;
Makarov, A.;
Jech, M.;
Vexler, M.;
Franco, J.;
Kaczer, B.;
Grasser, T.

Publication type:

Article

Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 264, doi. 10.1134/S1063782618020161

By:

Shimanskii, A.;
Pavlyuk, T.;
Kopytkova, S.;
Filatov, R.;
Gorodishcheva, A.

Publication type:

Article

Ion-Beam Synthesis of the Crystalline Ge Phase in SiON Films upon Annealing under High Pressure.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 268, doi. 10.1134/S1063782618020215

By:

Tyschenko, I.;
Krivyakin, G.;
Volodin, V.

Publication type:

Article

Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons.

Published in:

Semiconductors, 2018, v. 52, n. 2, p. 137, doi. 10.1134/S1063782618020239

By:

Yafarov, R.

Publication type:

Article