Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 6, doi. 10.1134/S1063782618010086
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 1
Results: 24
1
2
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 1, p. 12, doi. 10.1134/S1063782618010098
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- Article
3
Ultrafast Dynamics of Photoinduced Electron-Hole Plasma in Semiconductor Nanowires.
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- Semiconductors, 2018, v. 52, n. 1, p. 19, doi. 10.1134/S1063782618010244
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- Article
4
On Mobility of Definite Energy Charge Carriers.
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- Semiconductors, 2018, v. 52, n. 1, p. 24, doi. 10.1134/S1063782618010049
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- Article
5
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium.
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- Semiconductors, 2018, v. 52, n. 1, p. 31, doi. 10.1134/S1063782618010141
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- Article
6
Infrared Reflection Spectra of PbSnSe ( x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures.
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- Semiconductors, 2018, v. 52, n. 1, p. 34, doi. 10.1134/S1063782618010177
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- Article
7
Mechanism of the Semiconductor-Metal Phase Transition in SmGdS Thin Films.
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- Semiconductors, 2018, v. 52, n. 1, p. 41, doi. 10.1134/S1063782618010116
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- Article
8
Mobility of the Two-Dimensional Electron Gas in DA- pHEMT Heterostructures with Various δ- n-Layer Profile Widths.
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- Semiconductors, 2018, v. 52, n. 1, p. 44, doi. 10.1134/S1063782618010189
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- Article
9
Bimodality in Arrays of InGaAs Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 1, p. 53, doi. 10.1134/S1063782618010153
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- Article
10
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots.
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- Semiconductors, 2018, v. 52, n. 1, p. 59, doi. 10.1134/S1063782618010220
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- Article
11
On the Electret Effect in Polymer-Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations.
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- Semiconductors, 2018, v. 52, n. 1, p. 64, doi. 10.1134/S1063782618010128
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- Article
12
Determination of Thermodynamic Parameters in the CuNiS Phase-Transition Regions.
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- Semiconductors, 2018, v. 52, n. 1, p. 71, doi. 10.1134/S1063782618010037
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- Article
13
Peculiarities of the Properties of III-V Semiconductors in a Multigrain Structure.
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- Semiconductors, 2018, v. 52, n. 1, p. 78, doi. 10.1134/S1063782618010256
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- Article
14
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide.
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- Semiconductors, 2018, v. 52, n. 1, p. 84, doi. 10.1134/S1063782618010074
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- Publication type:
- Article
15
Two-Terminal Tandem Solar Cells DSC/ c-Si: Optimization of TiO-based Photoelectrode Parameters.
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- Semiconductors, 2018, v. 52, n. 1, p. 88, doi. 10.1134/S1063782618010165
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- Publication type:
- Article
16
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
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- Article
17
On the Spatial Localization of Free Electrons in 4 H-SiC MOSFETS with an n Channel.
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- Semiconductors, 2018, v. 52, n. 1, p. 100, doi. 10.1134/S1063782618010104
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- Article
18
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells.
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- Semiconductors, 2018, v. 52, n. 1, p. 105, doi. 10.1134/S1063782618010025
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- Article
19
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100).
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- Semiconductors, 2018, v. 52, n. 1, p. 112, doi. 10.1134/S1063782618010207
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- Article
20
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume.
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- Semiconductors, 2018, v. 52, n. 1, p. 118, doi. 10.1134/S1063782618010050
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- Article
21
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InAlAs ( x = 0.05-0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001).
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- Semiconductors, 2018, v. 52, n. 1, p. 120, doi. 10.1134/S1063782618010232
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- Article
22
Investigation of the Modified Structure of a Quantum Cascade Laser.
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- Semiconductors, 2018, v. 52, n. 1, p. 126, doi. 10.1134/S106378261801013X
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- Article
23
On a New Mechanism for the Realization of Ohmic Contacts.
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- Semiconductors, 2018, v. 52, n. 1, p. 131, doi. 10.1134/S1063782618010190
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- Article
24
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
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- Publication type:
- Article