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Results: 21

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1650, doi. 10.1134/S1063782617120120
By:
- Liaw, Yue-Gie;
- Liao, Wen-Shiang;
- Wang, Mu-Chun;
- Chen, Chii-Wen;
- Li, Deshi;
- Gu, Haoshuang;
- Zou, Xuecheng
Publication type:
Article
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1542, doi. 10.1134/S1063782617120028
By:
- Baidakova, N.;
- Verbus, V.;
- Morozova, E.;
- Novikov, A.;
- Skorohodov, E.;
- Shaleev, M.;
- Yurasov, D.;
- Hombe, A.;
- Kurokawa, Y.;
- Usami, N.
Publication type:
Article
Electrical properties and the determination of interface state density from I- V, C- f and G- f measurements in Ir/Ru/ n-InGaN Schottky barrier diode.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1641, doi. 10.1134/S1063782617120156
By:
- Padma, R.;
- Rajagopal Reddy, V.
Publication type:
Article
Single electron transistor: Energy-level broadening effect and thermionic contribution.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1656, doi. 10.1134/S1063782617120144
By:
- Nasri, A.;
- Boubaker, A.;
- Khaldi, W.;
- Hafsi, B.;
- Kalboussi, A.
Publication type:
Article
Al-doped and pure ZnO thin films elaborated by sol-gel spin coating process for optoelectronic applications.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1604, doi. 10.1134/S1063782617120132
By:
- Maache, M.;
- Devers, T.;
- Chala, A.
Publication type:
Article
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1537, doi. 10.1134/S1063782617120041
By:
- Bushuykin, P.;
- Novikov, A.;
- Andreev, B.;
- Lobanov, D.;
- Yunin, P.;
- Skorokhodov, E.;
- Krasil'nikova, L.;
- Demidov, E.;
- Savchenko, G.;
- Davydov, V.
Publication type:
Article
Manifestation of PT symmetry in the exciton spectra of quantum wells.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1547, doi. 10.1134/S1063782617120119
By:
- Kochereshko, V.;
- Kotova, L.;
- Khakhalin, I.;
- Cox, R.;
- Mariette, H.;
- Andre, R.;
- Bukari, H.;
- Ivanov, S.
Publication type:
Article
Effect of Ag in CdSe thin films prepared using thermal evaporation.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1597, doi. 10.1134/S1063782617120181
By:
- Santhosh, T.;
- Bangera, K.;
- Shivakumar, G.
Publication type:
Article
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1552, doi. 10.1134/S1063782617120211
By:
- Yurasov, D.;
- Drozdov, M.;
- Shmagin, V.;
- Novikov, A.
Publication type:
Article
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1557, doi. 10.1134/S106378261712017X
By:
- Rumyantsev, V.;
- Kadykov, A.;
- Fadeev, M.;
- Dubinov, A.;
- Utochkin, V.;
- Mikhailov, N.;
- Dvoretskii, S.;
- Morozov, S.;
- Gavrilenko, V.
Publication type:
Article
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1562, doi. 10.1134/S106378261712003X
By:
- Bovkun, L.;
- Ikonnikov, A.;
- Aleshkin, V.;
- Krishtopenko, S.;
- Antonov, A.;
- Spirin, K.;
- Mikhailov, N.;
- Dvoretsky, S.;
- Gavrilenko, V.
Publication type:
Article
Radiation-produced defects in germanium: Experimental data and models of defects.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1571, doi. 10.1134/S1063782617120065
By:
- Emtsev, V.;
- Kozlovski, V.;
- Poloskin, D.;
- Oganesyan, G.
Publication type:
Article
Study and simulation of electron transport in GalnSb based on Monte Carlo method.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1588, doi. 10.1134/S1063782617120053
By:
- El Ouchdi, A.;
- Bouazza, B.;
- Belhadji, Y.;
- Massoum, N.
Publication type:
Article
Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1592, doi. 10.1134/S106378261712020X
By:
- Yfanti-Katti, M.;
- Prokopos-Chouliaras, F.;
- Milonakou-Koufoudaki, K.;
- Mitzithra, C.;
- Kordatos, K.;
- Hamilakis, S.;
- Kollia, C.;
- Loizos, Z.
Publication type:
Article
Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1634, doi. 10.1134/S1063782617120168
By:
- Rayerfrancis, A.;
- Balaji, Bhargav;
- Ahmed, N.;
- Balaji, C.
Publication type:
Article
Patterning approach for detecting defect in device manufacturing.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1661, doi. 10.1134/S1063782617120193
By:
- Vikram, Abhishek;
- Agarwal, Vineeta
Publication type:
Article
Effect of high voltage electric field on structure and property of PEDOT:PSS film.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1611, doi. 10.1134/S1063782617120223
By:
- Zhang, Jinling;
- Liu, Juncheng
Publication type:
Article
A comparative study on the electronic and optical properties of SbSe thin film.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1615, doi. 10.1134/S1063782617120107
By:
- Kamruzzaman, M.;
- Liu, Chaoping;
- Farid Ul Islam, A.;
- Zapien, J.
Publication type:
Article
Charge density at the AlO/Si interface in Metal-lnsulator-Semiconductor devices: Semiclassical and quantum mechanical descriptions.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1625, doi. 10.1134/S1063782617120089
By:
- Hlali, Slah;
- Hizem, Neila;
- Kalboussi, Adel
Publication type:
Article
The effects of electron irradiation and thermal dependence measurements on 4 H-SiC Schottky diode.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1666, doi. 10.1134/S1063782617120077
By:
- Ganiyev, Sabuhi;
- Azim Khairi, M.;
- Ahmad Fauzi, D.;
- Abdullah, Yusof;
- Hasbullah, N.
Publication type:
Article
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1531, doi. 10.1134/S1063782617120090
By:
- Ikonnikov, A.;
- Bovkun, L.;
- Rumyantsev, V.;
- Krishtopenko, S.;
- Aleshkin, V.;
- Kadykov, A.;
- Orlita, M.;
- Potemski, M.;
- Gavrilenko, V.;
- Morozov, S.;
- Dvoretsky, S.;
- Mikhailov, N.
Publication type:
Article