Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 9

Results: 22

Generation of surface electron states with a silicon-ultrathin-oxide interface under the field-induced damage of metal-oxide-semiconductor structures.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1136, doi. 10.1134/S1063782617090111

By:

Goldman, E.;
Levashov, S.;
Naryshkina, V.;
Chucheva, G.

Publication type:

Article

On the delta-type doping of GaAs-based heterostructures with manganese compounds.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1141, doi. 10.1134/S1063782617090159

By:

Moiseev, K.;
Nevedomsky, V.;
Kudriavtsev, Yu.;
Escobosa-Echavarria, A.;
Lopez-Lopez, M.

Publication type:

Article

Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their optical properties.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1111, doi. 10.1134/S1063782617090196

By:

Seredin, P.;
Goloshchapov, D.;
Lenshin, A.;
Lukin, A.;
Khudyakov, Yu.;
Arsentyev, I.;
Prutskij, Tatiana

Publication type:

Article

Characteristic properties of macroporous silicon sintering in an argon atmosphere.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1164, doi. 10.1134/S1063782617090044

By:

Astrova, E.;
Preobrazhenskiy, N.;
Pavlov, S.;
Voronkov, V.

Publication type:

Article

Degradation of micromorphous thin-film silicon (α-Si/μ c-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1180, doi. 10.1134/S106378261709007X

By:

Bogdanov, D.;
Gorbatovskii, G.;
Verbitskii, V.;
Bobyl, A.;
Terukov, E.

Publication type:

Article

High-temperature annealing of macroporous silicon in an inert-gas flow.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1153, doi. 10.1134/S1063782617090032

By:

Astrova, E.;
Preobrazhenskiy, N.;
Pavlov, S.;
Voronkov, V.

Publication type:

Article

Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1119, doi. 10.1134/S1063782617090172

By:

Prokofieva, L.;
Nasredinov, F.;
Konstantinov, P.;
Shabaldin, A.

Publication type:

Article

Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056

By:

Babichev, A.;
Kryzhanovskaya, N.;
Moiseev, E.;
Gladyshev, A.;
Karachinsky, L.;
Novikov, I.;
Blokhin, S.;
Bobrov, M.;
Zadiranov, Yu.;
Troshkov, S.;
Egorov, A.

Publication type:

Article

Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1133, doi. 10.1134/S1063782617090202

By:

Sobolev, N.;
Kalyadin, A.;
Shek, E.;
Shtel'makh, K.

Publication type:

Article

Derivation of an analytical expression for a physical process from an experimental curve with kinks.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1174, doi. 10.1134/S1063782617090093

By:

Davydov, V.;
Kharitonov, S.;
Lugina, N.;
Melnik, K.

Publication type:

Article

Hopping conductivity and dielectric relaxation in Schottky barriers on GaN.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1186, doi. 10.1134/S1063782617090068

By:

Bochkareva, N.;
Voronenkov, V.;
Gorbunov, R.;
Virko, M.;
Kogotkov, V.;
Leonidov, A.;
Vorontsov-Velyaminov, P.;
Sheremet, I.;
Shreter, Yu.

Publication type:

Article

Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1148, doi. 10.1134/S1063782617090081

By:

Danilov, L.;
Mikhailova, M.;
Andreev, I.;
Zegrya, G.

Publication type:

Article

Transient switch-off of a 4 H-SiC bipolar transistor from the deep-saturation mode.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1194, doi. 10.1134/S1063782617090238

By:

Yuferev, V.;
Levinshtein, M.;
Ivanov, P.;
Zhang, Jon;
Palmour, John

Publication type:

Article

Electric-field sensor based on a double quantum dot in a microcavity.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1200, doi. 10.1134/S1063782617090214

By:

Tsukanov, A.;
Chekmachev, V.

Publication type:

Article

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: I. Physics of the switching process.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1208, doi. 10.1134/S1063782617090123

By:

Kyuregyan, A.

Publication type:

Article

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: II. Energy efficiency.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1214, doi. 10.1134/S1063782617090135

By:

Kyuregyan, A.

Publication type:

Article

Electrical and thermal properties of photoconductive antennas based on InGaAs ( x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1218, doi. 10.1134/S1063782617090160

By:

Ponomarev, D.;
Khabibullin, R.;
Yachmenev, A.;
Pavlov, A.;
Slapovskiy, D.;
Glinskiy, I.;
Lavrukhin, D.;
Ruban, O.;
Maltsev, P.

Publication type:

Article

Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1224, doi. 10.1134/S1063782617090184

By:

Royz, M.;
Baranov, A.;
Imenkov, A.;
Burenina, D.;
Pivovarova, A.;
Monakhov, A.;
Grebenshchikova, E.;
Yakovlev, Yu.

Publication type:

Article

Formation of low-dimensional structures in the InSb/AlAs heterosystem.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1233, doi. 10.1134/S1063782617090020

By:

Abramkin, D.;
Bakarov, A.;
Putyato, M.;
Emelyanov, E.;
Kolotovkina, D.;
Gutakovskii, A.;
Shamirzaev, T.

Publication type:

Article

High-voltage MIS-gated GaN transistors.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1229, doi. 10.1134/S106378261709010X

By:

Erofeev, E.;
Fedin, I.;
Fedina, V.;
Stepanenko, M.;
Yuryeva, A.

Publication type:

Article

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226

By:

Tyschenko, I.;
Cherkov, A.;
Volodin, V.;
Voelskow, M.

Publication type:

Article

Residual stresses in silicon and their evolution upon heat treatment and irradiation.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1107, doi. 10.1134/S1063782617090147

By:

Matyash, I.;
Minailova, I.;
Serdega, B.;
Khirunenko, L.

Publication type:

Article