Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 9
1
- Semiconductors, 2017, v. 51, n. 9, p. 1136, doi. 10.1134/S1063782617090111
- Goldman, E.;
- Levashov, S.;
- Naryshkina, V.;
- Chucheva, G.
- Article
2
- Semiconductors, 2017, v. 51, n. 9, p. 1141, doi. 10.1134/S1063782617090159
- Moiseev, K.;
- Nevedomsky, V.;
- Kudriavtsev, Yu.;
- Escobosa-Echavarria, A.;
- Lopez-Lopez, M.
- Article
3
- Semiconductors, 2017, v. 51, n. 9, p. 1111, doi. 10.1134/S1063782617090196
- Seredin, P.;
- Goloshchapov, D.;
- Lenshin, A.;
- Lukin, A.;
- Khudyakov, Yu.;
- Arsentyev, I.;
- Prutskij, Tatiana
- Article
4
- Semiconductors, 2017, v. 51, n. 9, p. 1164, doi. 10.1134/S1063782617090044
- Astrova, E.;
- Preobrazhenskiy, N.;
- Pavlov, S.;
- Voronkov, V.
- Article
5
- Semiconductors, 2017, v. 51, n. 9, p. 1180, doi. 10.1134/S106378261709007X
- Bogdanov, D.;
- Gorbatovskii, G.;
- Verbitskii, V.;
- Bobyl, A.;
- Terukov, E.
- Article
6
- Semiconductors, 2017, v. 51, n. 9, p. 1153, doi. 10.1134/S1063782617090032
- Astrova, E.;
- Preobrazhenskiy, N.;
- Pavlov, S.;
- Voronkov, V.
- Article
7
- Semiconductors, 2017, v. 51, n. 9, p. 1119, doi. 10.1134/S1063782617090172
- Prokofieva, L.;
- Nasredinov, F.;
- Konstantinov, P.;
- Shabaldin, A.
- Article
8
- Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056
- Babichev, A.;
- Kryzhanovskaya, N.;
- Moiseev, E.;
- Gladyshev, A.;
- Karachinsky, L.;
- Novikov, I.;
- Blokhin, S.;
- Bobrov, M.;
- Zadiranov, Yu.;
- Troshkov, S.;
- Egorov, A.
- Article
9
- Semiconductors, 2017, v. 51, n. 9, p. 1133, doi. 10.1134/S1063782617090202
- Sobolev, N.;
- Kalyadin, A.;
- Shek, E.;
- Shtel'makh, K.
- Article
10
- Semiconductors, 2017, v. 51, n. 9, p. 1174, doi. 10.1134/S1063782617090093
- Davydov, V.;
- Kharitonov, S.;
- Lugina, N.;
- Melnik, K.
- Article
11
- Semiconductors, 2017, v. 51, n. 9, p. 1186, doi. 10.1134/S1063782617090068
- Bochkareva, N.;
- Voronenkov, V.;
- Gorbunov, R.;
- Virko, M.;
- Kogotkov, V.;
- Leonidov, A.;
- Vorontsov-Velyaminov, P.;
- Sheremet, I.;
- Shreter, Yu.
- Article
12
- Semiconductors, 2017, v. 51, n. 9, p. 1148, doi. 10.1134/S1063782617090081
- Danilov, L.;
- Mikhailova, M.;
- Andreev, I.;
- Zegrya, G.
- Article
13
- Semiconductors, 2017, v. 51, n. 9, p. 1194, doi. 10.1134/S1063782617090238
- Yuferev, V.;
- Levinshtein, M.;
- Ivanov, P.;
- Zhang, Jon;
- Palmour, John
- Article
14
- Semiconductors, 2017, v. 51, n. 9, p. 1200, doi. 10.1134/S1063782617090214
- Tsukanov, A.;
- Chekmachev, V.
- Article
15
- Semiconductors, 2017, v. 51, n. 9, p. 1208, doi. 10.1134/S1063782617090123
- Article
16
- Semiconductors, 2017, v. 51, n. 9, p. 1214, doi. 10.1134/S1063782617090135
- Article
17
- Semiconductors, 2017, v. 51, n. 9, p. 1218, doi. 10.1134/S1063782617090160
- Ponomarev, D.;
- Khabibullin, R.;
- Yachmenev, A.;
- Pavlov, A.;
- Slapovskiy, D.;
- Glinskiy, I.;
- Lavrukhin, D.;
- Ruban, O.;
- Maltsev, P.
- Article
18
- Semiconductors, 2017, v. 51, n. 9, p. 1224, doi. 10.1134/S1063782617090184
- Royz, M.;
- Baranov, A.;
- Imenkov, A.;
- Burenina, D.;
- Pivovarova, A.;
- Monakhov, A.;
- Grebenshchikova, E.;
- Yakovlev, Yu.
- Article
19
- Semiconductors, 2017, v. 51, n. 9, p. 1233, doi. 10.1134/S1063782617090020
- Abramkin, D.;
- Bakarov, A.;
- Putyato, M.;
- Emelyanov, E.;
- Kolotovkina, D.;
- Gutakovskii, A.;
- Shamirzaev, T.
- Article
20
- Semiconductors, 2017, v. 51, n. 9, p. 1229, doi. 10.1134/S106378261709010X
- Erofeev, E.;
- Fedin, I.;
- Fedina, V.;
- Stepanenko, M.;
- Yuryeva, A.
- Article
21
- Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226
- Tyschenko, I.;
- Cherkov, A.;
- Volodin, V.;
- Voelskow, M.
- Article
22
- Semiconductors, 2017, v. 51, n. 9, p. 1107, doi. 10.1134/S1063782617090147
- Matyash, I.;
- Minailova, I.;
- Serdega, B.;
- Khirunenko, L.
- Article