Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 8
Results: 32
Anisotropy of the thermopower in higher silicide of transitions metals.
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- Semiconductors, 2017, v. 51, n. 8, p. 972, doi. 10.1134/S1063782617080188
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Response of thermoelectric parameters of BiSbTe films to secondary recrystallization.
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- Semiconductors, 2017, v. 51, n. 8, p. 976, doi. 10.1134/S1063782617080048
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Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity.
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- Semiconductors, 2017, v. 51, n. 8, p. 979, doi. 10.1134/S1063782617080206
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Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power.
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- Semiconductors, 2017, v. 51, n. 8, p. 981, doi. 10.1134/S1063782617080255
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Thermoelements from antimony- and bismuth-chalcogenide alloys.
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- Semiconductors, 2017, v. 51, n. 8, p. 986, doi. 10.1134/S1063782617080140
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Specific features of the transport properties of the LuBiTe compound.
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- Semiconductors, 2017, v. 51, n. 8, p. 989, doi. 10.1134/S1063782617080322
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On the band structure of SbTeSe (0 ≤ x ≤ 0.1): Kinetic and optical data.
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- Semiconductors, 2017, v. 51, n. 8, p. 992, doi. 10.1134/S1063782617080243
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Contact resistance in spark plasma sintered segmented legs.
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- Semiconductors, 2017, v. 51, n. 8, p. 996, doi. 10.1134/S1063782617080097
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CeB thin films produced on different substrates by electron-beam deposition.
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- Semiconductors, 2017, v. 51, n. 8, p. 999, doi. 10.1134/S1063782617080176
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Thermoelectric properties of BiTeSe solid solutions of different particle-size composition.
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- Semiconductors, 2017, v. 51, n. 8, p. 1002, doi. 10.1134/S1063782617080139
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Thermoelectric properties of the MgGeSn solid solution with p-type conductivity.
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- Semiconductors, 2017, v. 51, n. 8, p. 1005, doi. 10.1134/S1063782617080127
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Optimization of a segmented generating leg.
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- Semiconductors, 2017, v. 51, n. 8, p. 1009, doi. 10.1134/S1063782617080103
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Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics.
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- Semiconductors, 2017, v. 51, n. 8, p. 1012, doi. 10.1134/S1063782617080267
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- Article
Superconducting properties of (PbSn)Te doped with indium under conditions of hydrostatic compression.
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- Semiconductors, 2017, v. 51, n. 8, p. 1017, doi. 10.1134/S106378261708022X
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Structure of BiSeTe alloy plates obtained by crystallization in a flat cavity by the Bridgman method.
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- Semiconductors, 2017, v. 51, n. 8, p. 1021, doi. 10.1134/S1063782617080085
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- Article
Thermoelectric properties of BiSbTe ribbons prepared by melt spinning.
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- Semiconductors, 2017, v. 51, n. 8, p. 1024, doi. 10.1134/S106378261708005X
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MnAgInS single crystals: Crystal structure, band gap, and thermal expansion.
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- Semiconductors, 2017, v. 51, n. 8, p. 1027, doi. 10.1134/S1063782617080036
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High-temperature diffusion of magnesium in dislocation-free silicon.
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- Semiconductors, 2017, v. 51, n. 8, p. 1031, doi. 10.1134/S1063782617080292
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Complex structure of optical transitions from the core d-levels of InAs and InSb crystals.
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- Semiconductors, 2017, v. 51, n. 8, p. 1034, doi. 10.1134/S1063782617080309
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Impurity levels in HgInTe crystals.
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- Semiconductors, 2017, v. 51, n. 8, p. 1041, doi. 10.1134/S1063782617080061
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Effects of irradiation with 8-MeV protons on n-3 C-SiC heteroepitaxial layers.
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- Semiconductors, 2017, v. 51, n. 8, p. 1044, doi. 10.1134/S1063782617080218
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Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers.
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- Semiconductors, 2017, v. 51, n. 8, p. 1047, doi. 10.1134/S1063782617080279
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On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account.
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- Semiconductors, 2017, v. 51, n. 8, p. 1052, doi. 10.1134/S1063782617080152
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Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100).
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- Semiconductors, 2017, v. 51, n. 8, p. 1093, doi. 10.1134/S106378261708019X
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Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions.
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- Semiconductors, 2017, v. 51, n. 8, p. 1067, doi. 10.1134/S1063782617080115
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Study of the crystal and electronic structure of graphene films grown on 6 H-SiC (0001).
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- Semiconductors, 2017, v. 51, n. 8, p. 1072, doi. 10.1134/S1063782617080073
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Current-voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers.
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- Semiconductors, 2017, v. 51, n. 8, p. 1081, doi. 10.1134/S1063782617080231
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.
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- Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280
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Influence of traps in silicon dioxide on the breakdown of MOS structures.
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- Semiconductors, 2017, v. 51, n. 8, p. 1062, doi. 10.1134/S1063782617080024
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InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates.
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- Semiconductors, 2017, v. 51, n. 8, p. 1101, doi. 10.1134/S1063782617080310
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Erratum to: 'Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron'.
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- 2017
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- Erratum
Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)][(Bi, Sb)(Te, Se)] ( m, n = 0, 1, 2,...) family within the theory of closely packed spheres.
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- Semiconductors, 2017, v. 51, n. 8, p. 969, doi. 10.1134/S1063782617080164
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