Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 6

Results: 28

On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and BiSbTe solid solution.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 692, doi. 10.1134/S1063782617060203
By:
- Lukyanova, L.;
- Boikov, Yu.;
- Usov, O.;
- Danilov, V.
Publication type:
Article
Calculation of the thermal conductivity of nanostructured BiTe with the real phonon spectrum taken into account.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 695, doi. 10.1134/S1063782617060070
By:
- Bulat, L.;
- Pshenay-Severin, D.;
- Osvenskii, V.;
- Parkhomenko, Yu.
Publication type:
Article
Thermoelectric properties of InSb〈Zn〉 in nanoporous glass.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 699, doi. 10.1134/S1063782617060276
By:
- Uryupin, O.;
- Shabaldin, A.
Publication type:
Article
Galvanomagnetic properties of BiSb thin films on different substrates.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 702, doi. 10.1134/S1063782617060173
By:
- Komarov, V.;
- Suslov, A.;
- Suslov, M.
Publication type:
Article
Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 706, doi. 10.1134/S1063782617060240
By:
- Orekhov, A.;
- Kamilov, T.;
- Ibragimova, B.;
- Ivakin, G.;
- Klechkovskaya, V.
Publication type:
Article
Synthesis and electrical properties of BiTe-based thermoelectric materials doped with Er, Tm, Yb, and Lu.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 710, doi. 10.1134/S106378261706029X
By:
- Yapryntsev, M.;
- Lyubushkin, R.;
- Soklakova, O.;
- Ivanov, O.
Publication type:
Article
Preparation and properties of ZnSb-based thermoelectric material.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 714, doi. 10.1134/S1063782617060252
By:
- Panchenko, V.;
- Tabachkova, N.;
- Ivanov, A.;
- Senatulin, B.;
- Andreev, E.
Publication type:
Article
Fe-based semiconducting Heusler alloys.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 718, doi. 10.1134/S1063782617060136
By:
- Khovaylo, V.;
- Voronin, A.;
- Zueva, V.;
- Seredina, M.;
- Chatterdjee, R.
Publication type:
Article
Simulation of the field-activated sintering of thermoelectric materials.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 722, doi. 10.1134/S1063782617060082
By:
- Bulat, L.;
- Novotelnova, A.;
- Osvenskii, V.;
- Tukmakova, A.;
- Yerezhep, D.
Publication type:
Article
Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 725, doi. 10.1134/S1063782617060288
By:
- Yakovleva, G.;
- Romanenko, A.;
- Berdinsky, A.;
- Kuznetsov, V.;
- Ledneva, A.;
- Artemkina, S.;
- Fedorov, V.
Publication type:
Article
On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 729, doi. 10.1134/S1063782617060197
By:
- Lukyanova, L.;
- Bibik, A.;
- Aseev, V.;
- Usov, O.;
- Makarenko, I.;
- Petrov, V.;
- Nikonorov, N.
Publication type:
Article
Polymorphic transformations and thermal expansion in AgCuSe(S,Te) crystals.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 732, doi. 10.1134/S1063782617060045
By:
- Aliyev, Y.;
- Asadov, Y.;
- Aliyeva, R.;
- Jabarov, S.
Publication type:
Article
On a neutron detector based on TlInSe crystals intercalated with a lithium isotope.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 740, doi. 10.1134/S1063782617060021
By:
- Alekseev, I.;
- Goremychkin, E.;
- Gundorin, N.;
- Petrenko, A.;
- Sashin, I.
Publication type:
Article
Study of the distribution profile of iron ions implanted into silicon.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 745, doi. 10.1134/S1063782617060185
By:
- Kozhemyako, A.;
- Balakshin, Yu.;
- Shemukhin, A.;
- Chernysh, V.
Publication type:
Article
Electrical properties of ZnSe crystals doped with transition elements.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 751, doi. 10.1134/S1063782617060239
By:
- Nitsuk, Yu.;
- Vaksman, Yu.
Publication type:
Article
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 755, doi. 10.1134/S1063782617060264
By:
- Rekhviashvili, S.;
- Alikhanov, A.
Publication type:
Article
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100
By:
- Galiev, G.;
- Klochkov, A.;
- Vasil'evskii, I.;
- Klimov, E.;
- Pushkarev, S.;
- Vinichenko, A.;
- Khabibullin, R.;
- Maltsev, P.
Publication type:
Article
Classical magnetoresistance of a two-component system induced by thermoelectric effects.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 766, doi. 10.1134/S1063782617060033
By:
- Alekseev, P.;
- Gornyi, I.;
- Dmitriev, A.;
- Kachorovskii, V.;
- Semina, M.
Publication type:
Article
Influence of the samarium impurity on the structure and surface morphology of SeTe chalcogenide glassy semiconductor.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 777, doi. 10.1134/S1063782617060215
By:
- Mekhtiyeva, S.;
- Atayeva, S.;
- Isayev, A.;
- Zeynalov, V.
Publication type:
Article
Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 783, doi. 10.1134/S1063782617060057
By:
- Basalaev, Yu.;
- Kopytov, A.;
- Poplavnoi, A.;
- Polygalov, Yu.
Publication type:
Article
n-ZnO/ p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 789, doi. 10.1134/S106378261706015X
By:
- Klochko, N.;
- Kopach, V.;
- Khrypunov, G.;
- Korsun, V.;
- Volkova, N.;
- Lyubov, V.;
- Kirichenko, M.;
- Kopach, A.;
- Zhadan, D.;
- Otchenashko, A.
Publication type:
Article
On the limit of the injection ability of silicon p - n junctions as a result of fundamental physical effects.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 798, doi. 10.1134/S1063782617060227
By:
- Mnatsakanov, T.;
- Levinshtein, M.;
- Shuman, V.;
- Seredin, B.
Publication type:
Article
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 803, doi. 10.1134/S1063782617060112
By:
- Gorbatyuk, A.;
- Ivanov, B.
Publication type:
Article
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 812, doi. 10.1134/S1063782617060069
By:
- Buchin, E.;
- Naumov, V.;
- Vasilyev, S.
Publication type:
Article
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 817, doi. 10.1134/S1063782617060161
By:
- Kobziev, V.;
- Zakirova, R.;
- Kostenkov, N.;
- Krylov, P.;
- Fedotova, I.
Publication type:
Article
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 823, doi. 10.1134/S1063782617060148
By:
- Kirienko, D.;
- Berezina, O.
Publication type:
Article
Structural features of SmEuS thin polycrystalline films.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 828, doi. 10.1134/S1063782617060124
By:
- Kaminskii, V.;
- Solov'ev, S.;
- Khavrov, G.;
- Sharenkova, N.;
- Hirai, Shinji
Publication type:
Article
Transport properties of cobalt monosilicide and its alloys at low temperatures.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 689, doi. 10.1134/S1063782617060094
By:
- Burkov, A.;
- Novikov, S.;
- Zaitsev, V.;
- Reith, H.
Publication type:
Article