Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 6

Results: 28

Galvanomagnetic properties of BiSb thin films on different substrates.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 702, doi. 10.1134/S1063782617060173

By:

Komarov, V.;
Suslov, A.;
Suslov, M.

Publication type:

Article

On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and BiSbTe solid solution.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 692, doi. 10.1134/S1063782617060203

By:

Lukyanova, L.;
Boikov, Yu.;
Usov, O.;
Danilov, V.

Publication type:

Article

Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 706, doi. 10.1134/S1063782617060240

By:

Orekhov, A.;
Kamilov, T.;
Ibragimova, B.;
Ivakin, G.;
Klechkovskaya, V.

Publication type:

Article

Synthesis and electrical properties of BiTe-based thermoelectric materials doped with Er, Tm, Yb, and Lu.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 710, doi. 10.1134/S106378261706029X

By:

Yapryntsev, M.;
Lyubushkin, R.;
Soklakova, O.;
Ivanov, O.

Publication type:

Article

Preparation and properties of ZnSb-based thermoelectric material.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 714, doi. 10.1134/S1063782617060252

By:

Panchenko, V.;
Tabachkova, N.;
Ivanov, A.;
Senatulin, B.;
Andreev, E.

Publication type:

Article

Fe-based semiconducting Heusler alloys.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 718, doi. 10.1134/S1063782617060136

By:

Khovaylo, V.;
Voronin, A.;
Zueva, V.;
Seredina, M.;
Chatterdjee, R.

Publication type:

Article

Calculation of the thermal conductivity of nanostructured BiTe with the real phonon spectrum taken into account.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 695, doi. 10.1134/S1063782617060070

By:

Bulat, L.;
Pshenay-Severin, D.;
Osvenskii, V.;
Parkhomenko, Yu.

Publication type:

Article

Thermoelectric properties of InSb〈Zn〉 in nanoporous glass.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 699, doi. 10.1134/S1063782617060276

By:

Uryupin, O.;
Shabaldin, A.

Publication type:

Article

Simulation of the field-activated sintering of thermoelectric materials.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 722, doi. 10.1134/S1063782617060082

By:

Bulat, L.;
Novotelnova, A.;
Osvenskii, V.;
Tukmakova, A.;
Yerezhep, D.

Publication type:

Article

On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 729, doi. 10.1134/S1063782617060197

By:

Lukyanova, L.;
Bibik, A.;
Aseev, V.;
Usov, O.;
Makarenko, I.;
Petrov, V.;
Nikonorov, N.

Publication type:

Article

Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 725, doi. 10.1134/S1063782617060288

By:

Yakovleva, G.;
Romanenko, A.;
Berdinsky, A.;
Kuznetsov, V.;
Ledneva, A.;
Artemkina, S.;
Fedorov, V.

Publication type:

Article

Electrical properties of ZnSe crystals doped with transition elements.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 751, doi. 10.1134/S1063782617060239

By:

Nitsuk, Yu.;
Vaksman, Yu.

Publication type:

Article

Polymorphic transformations and thermal expansion in AgCuSe(S,Te) crystals.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 732, doi. 10.1134/S1063782617060045

By:

Aliyev, Y.;
Asadov, Y.;
Aliyeva, R.;
Jabarov, S.

Publication type:

Article

On a neutron detector based on TlInSe crystals intercalated with a lithium isotope.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 740, doi. 10.1134/S1063782617060021

By:

Alekseev, I.;
Goremychkin, E.;
Gundorin, N.;
Petrenko, A.;
Sashin, I.

Publication type:

Article

Study of the distribution profile of iron ions implanted into silicon.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 745, doi. 10.1134/S1063782617060185

By:

Kozhemyako, A.;
Balakshin, Yu.;
Shemukhin, A.;
Chernysh, V.

Publication type:

Article

n-ZnO/ p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 789, doi. 10.1134/S106378261706015X

By:

Klochko, N.;
Kopach, V.;
Khrypunov, G.;
Korsun, V.;
Volkova, N.;
Lyubov, V.;
Kirichenko, M.;
Kopach, A.;
Zhadan, D.;
Otchenashko, A.

Publication type:

Article

Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100

By:

Galiev, G.;
Klochkov, A.;
Vasil'evskii, I.;
Klimov, E.;
Pushkarev, S.;
Vinichenko, A.;
Khabibullin, R.;
Maltsev, P.

Publication type:

Article

Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 783, doi. 10.1134/S1063782617060057

By:

Basalaev, Yu.;
Kopytov, A.;
Poplavnoi, A.;
Polygalov, Yu.

Publication type:

Article

Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 755, doi. 10.1134/S1063782617060264

By:

Rekhviashvili, S.;
Alikhanov, A.

Publication type:

Article

Influence of the samarium impurity on the structure and surface morphology of SeTe chalcogenide glassy semiconductor.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 777, doi. 10.1134/S1063782617060215

By:

Mekhtiyeva, S.;
Atayeva, S.;
Isayev, A.;
Zeynalov, V.

Publication type:

Article

Classical magnetoresistance of a two-component system induced by thermoelectric effects.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 766, doi. 10.1134/S1063782617060033

By:

Alekseev, P.;
Gornyi, I.;
Dmitriev, A.;
Kachorovskii, V.;
Semina, M.

Publication type:

Article

Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 817, doi. 10.1134/S1063782617060161

By:

Kobziev, V.;
Zakirova, R.;
Kostenkov, N.;
Krylov, P.;
Fedotova, I.

Publication type:

Article

On the limit of the injection ability of silicon p - n junctions as a result of fundamental physical effects.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 798, doi. 10.1134/S1063782617060227

By:

Mnatsakanov, T.;
Levinshtein, M.;
Shuman, V.;
Seredin, B.

Publication type:

Article

Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 812, doi. 10.1134/S1063782617060069

By:

Buchin, E.;
Naumov, V.;
Vasilyev, S.

Publication type:

Article

On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 823, doi. 10.1134/S1063782617060148

By:

Kirienko, D.;
Berezina, O.

Publication type:

Article

Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 803, doi. 10.1134/S1063782617060112

By:

Gorbatyuk, A.;
Ivanov, B.

Publication type:

Article

Structural features of SmEuS thin polycrystalline films.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 828, doi. 10.1134/S1063782617060124

By:

Kaminskii, V.;
Solov'ev, S.;
Khavrov, G.;
Sharenkova, N.;
Hirai, Shinji

Publication type:

Article

Transport properties of cobalt monosilicide and its alloys at low temperatures.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 689, doi. 10.1134/S1063782617060094

By:

Burkov, A.;
Novikov, S.;
Zaitsev, V.;
Reith, H.

Publication type:

Article