Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 5
Results: 25
Optical an photoelectric properties odf ZnSe:Ti crystals.
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- Semiconductors, 2017, v. 51, n. 5, p. 571, doi. 10.1134/S1063782617050190
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Ab initio calculations of phonon dispersion in CdGaSe.
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- Semiconductors, 2017, v. 51, n. 5, p. 556, doi. 10.1134/S1063782617050074
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Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering.
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- Semiconductors, 2017, v. 51, n. 5, p. 559, doi. 10.1134/S1063782617050177
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Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs.
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- Semiconductors, 2017, v. 51, n. 5, p. 565, doi. 10.1134/S1063782617050025
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Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir-Blodgett method.
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- Semiconductors, 2017, v. 51, n. 5, p. 576, doi. 10.1134/S1063782617050268
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Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium.
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- Semiconductors, 2017, v. 51, n. 5, p. 582, doi. 10.1134/S1063782617050244
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Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions.
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- Semiconductors, 2017, v. 51, n. 5, p. 586, doi. 10.1134/S1063782617050165
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Origin of discrepancies in the experimental values of the barrier height at metal-semiconductor junctions.
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- Semiconductors, 2017, v. 51, n. 5, p. 591, doi. 10.1134/S1063782617050049
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Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field.
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- Semiconductors, 2017, v. 51, n. 5, p. 594, doi. 10.1134/S1063782617050207
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Injection-induced terahertz electroluminescence from silicon p-n structures.
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- Semiconductors, 2017, v. 51, n. 5, p. 604, doi. 10.1134/S1063782617050256
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Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures.
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- Semiconductors, 2017, v. 51, n. 5, p. 608, doi. 10.1134/S106378261705013X
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Electronic structure of single-layer superlattices (GeC)(SiC), (SnC)(SiC), and (SnC)(GeC).
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- Semiconductors, 2017, v. 51, n. 5, p. 617, doi. 10.1134/S1063782617050050
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Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice.
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- Semiconductors, 2017, v. 51, n. 5, p. 621, doi. 10.1134/S1063782617050086
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Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals.
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- Semiconductors, 2017, v. 51, n. 5, p. 628, doi. 10.1134/S1063782617050153
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On the photoconductivity of TlInSe.
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- Semiconductors, 2017, v. 51, n. 5, p. 632, doi. 10.1134/S1063782617050104
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Effect of hydrogen desorption on the mechanical properties and electron structure of diamond-like carbon nanothreads.
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- Semiconductors, 2017, v. 51, n. 5, p. 636, doi. 10.1134/S1063782617050219
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Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate.
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- Semiconductors, 2017, v. 51, n. 5, p. 640, doi. 10.1134/S1063782617050062
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InAs QDs in a metamorphic InGaAs matrix, grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 5, p. 672, doi. 10.1134/S1063782617050189
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Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode.
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- Semiconductors, 2017, v. 51, n. 5, p. 649, doi. 10.1134/S1063782617050098
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Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers.
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- Semiconductors, 2017, v. 51, n. 5, p. 657, doi. 10.1134/S1063782617050220
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On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates.
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- Semiconductors, 2017, v. 51, n. 5, p. 663, doi. 10.1134/S1063782617050037
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Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters.
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- Semiconductors, 2017, v. 51, n. 5, p. 667, doi. 10.1134/S1063782617050116
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Laser (λ = 809 nm) power converter based on GaAs.
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- Semiconductors, 2017, v. 51, n. 5, p. 645, doi. 10.1134/S1063782617050128
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Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe.
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- Semiconductors, 2017, v. 51, n. 5, p. 679, doi. 10.1134/S1063782617050232
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Negative annealing in silicon after the implantation of high-energy sodium ions.
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- Semiconductors, 2017, v. 51, n. 5, p. 549, doi. 10.1134/S1063782617050141
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