Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 420, doi. 10.1134/S1063782617040091
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 4
Results: 24
1
2
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures.
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- Semiconductors, 2017, v. 51, n. 4, p. 438, doi. 10.1134/S1063782617040194
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- Article
3
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions.
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- Semiconductors, 2017, v. 51, n. 4, p. 430, doi. 10.1134/S1063782617040169
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- Article
4
Effect of gamma irradiation on the photoluminescence of porous silicon.
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- Semiconductors, 2017, v. 51, n. 4, p. 483, doi. 10.1134/S1063782617040029
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- Publication type:
- Article
5
Optical transparency of graphene layers grown on metal surfaces.
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- Semiconductors, 2017, v. 51, n. 4, p. 492, doi. 10.1134/S1063782617040182
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- Article
6
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation.
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- Semiconductors, 2017, v. 51, n. 4, p. 417, doi. 10.1134/S1063782617040108
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- Article
7
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer.
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- Semiconductors, 2017, v. 51, n. 4, p. 498, doi. 10.1134/S1063782617040145
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- Article
8
Electron mobility in the inversion layers of fully depleted SOI films.
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- Semiconductors, 2017, v. 51, n. 4, p. 423, doi. 10.1134/S1063782617040248
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- Article
9
Quantum-well charge and voltage distribution in a metal-insulator-semiconductor structure upon resonant electron Tunneling.
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- Semiconductors, 2017, v. 51, n. 4, p. 444, doi. 10.1134/S1063782617040224
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- Article
10
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide.
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- Semiconductors, 2017, v. 51, n. 4, p. 449, doi. 10.1134/S1063782617040133
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- Publication type:
- Article
11
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
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- Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
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- Article
12
Terahertz radiation in InGaAs grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation.
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- Semiconductors, 2017, v. 51, n. 4, p. 509, doi. 10.1134/S1063782617040170
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- Article
13
Specific features of ZnCdS nanoparticles synthesized in different solvents.
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- Semiconductors, 2017, v. 51, n. 4, p. 454, doi. 10.1134/S106378261704011X
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- Publication type:
- Article
14
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism.
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- Semiconductors, 2017, v. 51, n. 4, p. 458, doi. 10.1134/S1063782617040212
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- Publication type:
- Article
15
Ab initio calculations of the electron spectrum and density of states of TlFeS and TlFeSe crystals.
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- Semiconductors, 2017, v. 51, n. 4, p. 473, doi. 10.1134/S1063782617040078
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- Publication type:
- Article
16
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 477, doi. 10.1134/S106378261704025X
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- Article
17
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 488, doi. 10.1134/S1063782617040030
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- Publication type:
- Article
18
Optimization of vertical cavity lasers with intracavity metal layers.
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- Semiconductors, 2017, v. 51, n. 4, p. 520, doi. 10.1134/S1063782617040121
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- Publication type:
- Article
19
In AsSb heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers.
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- Semiconductors, 2017, v. 51, n. 4, p. 524, doi. 10.1134/S1063782617040066
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- Publication type:
- Article
20
Investigation of spatial distribution of photocurrent in the plane of a Si p-n photodiode with GeSi nanoislands by scanning near-field optical microscopy.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 536, doi. 10.1134/S1063782617040042
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- Publication type:
- Article
21
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 514, doi. 10.1134/S106378261704008X
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- Publication type:
- Article
22
Surface nanostructuring in the carbon-silicon(100) system upon microwave plasma treatment.
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- Semiconductors, 2017, v. 51, n. 4, p. 531, doi. 10.1134/S1063782617040236
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- Publication type:
- Article
23
Silicon nanowire array architecture for heterojunction electronics.
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 542, doi. 10.1134/S1063782617040200
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- Publication type:
- Article
24
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator BiSb (0.07 ≤ x ≤ 0.2).
- Published in:
- Semiconductors, 2017, v. 51, n. 4, p. 413, doi. 10.1134/S1063782617040157
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- Publication type:
- Article