Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 4
Results: 24
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation.
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- Semiconductors, 2017, v. 51, n. 4, p. 417, doi. 10.1134/S1063782617040108
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Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe.
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- Semiconductors, 2017, v. 51, n. 4, p. 420, doi. 10.1134/S1063782617040091
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Electron mobility in the inversion layers of fully depleted SOI films.
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- Semiconductors, 2017, v. 51, n. 4, p. 423, doi. 10.1134/S1063782617040248
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Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions.
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- Semiconductors, 2017, v. 51, n. 4, p. 430, doi. 10.1134/S1063782617040169
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Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures.
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- Semiconductors, 2017, v. 51, n. 4, p. 438, doi. 10.1134/S1063782617040194
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Quantum-well charge and voltage distribution in a metal-insulator-semiconductor structure upon resonant electron Tunneling.
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- Semiconductors, 2017, v. 51, n. 4, p. 444, doi. 10.1134/S1063782617040224
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Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide.
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- Semiconductors, 2017, v. 51, n. 4, p. 449, doi. 10.1134/S1063782617040133
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Specific features of ZnCdS nanoparticles synthesized in different solvents.
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- Semiconductors, 2017, v. 51, n. 4, p. 454, doi. 10.1134/S106378261704011X
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism.
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- Semiconductors, 2017, v. 51, n. 4, p. 458, doi. 10.1134/S1063782617040212
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Ab initio calculations of the electron spectrum and density of states of TlFeS and TlFeSe crystals.
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- Semiconductors, 2017, v. 51, n. 4, p. 473, doi. 10.1134/S1063782617040078
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Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments.
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- Semiconductors, 2017, v. 51, n. 4, p. 477, doi. 10.1134/S106378261704025X
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Effect of gamma irradiation on the photoluminescence of porous silicon.
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- Semiconductors, 2017, v. 51, n. 4, p. 483, doi. 10.1134/S1063782617040029
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On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes.
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- Semiconductors, 2017, v. 51, n. 4, p. 488, doi. 10.1134/S1063782617040030
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Optical transparency of graphene layers grown on metal surfaces.
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- Semiconductors, 2017, v. 51, n. 4, p. 492, doi. 10.1134/S1063782617040182
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Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer.
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- Semiconductors, 2017, v. 51, n. 4, p. 498, doi. 10.1134/S1063782617040145
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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
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- Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
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Terahertz radiation in InGaAs grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation.
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- Semiconductors, 2017, v. 51, n. 4, p. 509, doi. 10.1134/S1063782617040170
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Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme.
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- Semiconductors, 2017, v. 51, n. 4, p. 514, doi. 10.1134/S106378261704008X
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Optimization of vertical cavity lasers with intracavity metal layers.
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- Semiconductors, 2017, v. 51, n. 4, p. 520, doi. 10.1134/S1063782617040121
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In AsSb heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers.
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- Semiconductors, 2017, v. 51, n. 4, p. 524, doi. 10.1134/S1063782617040066
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Surface nanostructuring in the carbon-silicon(100) system upon microwave plasma treatment.
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- Semiconductors, 2017, v. 51, n. 4, p. 531, doi. 10.1134/S1063782617040236
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Investigation of spatial distribution of photocurrent in the plane of a Si p-n photodiode with GeSi nanoislands by scanning near-field optical microscopy.
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- Semiconductors, 2017, v. 51, n. 4, p. 536, doi. 10.1134/S1063782617040042
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Silicon nanowire array architecture for heterojunction electronics.
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- Semiconductors, 2017, v. 51, n. 4, p. 542, doi. 10.1134/S1063782617040200
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On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator BiSb (0.07 ≤ x ≤ 0.2).
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- Semiconductors, 2017, v. 51, n. 4, p. 413, doi. 10.1134/S1063782617040157
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