Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 3
Results: 26
Crystal defects in solar cells produced by the method of thermomigration.
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- Semiconductors, 2017, v. 51, n. 3, p. 285, doi. 10.1134/S1063782617030162
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Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength.
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- Semiconductors, 2017, v. 51, n. 3, p. 290, doi. 10.1134/S1063782617030046
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Atomic configuration and charge state of hydrogen at dislocations in silicon.
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- Semiconductors, 2017, v. 51, n. 3, p. 293, doi. 10.1134/S1063782617030265
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Effect of the energy of bombarding electrons on the conductivity of n-4 H-SiC (CVD) epitaxial layers.
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- Semiconductors, 2017, v. 51, n. 3, p. 299, doi. 10.1134/S1063782617030137
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Effect of H implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region.
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- Semiconductors, 2017, v. 51, n. 3, p. 305, doi. 10.1134/S1063782617030113
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Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.
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- Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071
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Effect of temperature and doping with Cu on the reflectance spectra of PbSbTe crystals.
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- Semiconductors, 2017, v. 51, n. 3, p. 318, doi. 10.1134/S1063782617030204
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Radiative d-d transitions at tungsten centers in II-VI semiconductors.
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- Semiconductors, 2017, v. 51, n. 3, p. 322, doi. 10.1134/S1063782617030253
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On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses.
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- Semiconductors, 2017, v. 51, n. 3, p. 326, doi. 10.1134/S1063782617030150
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Valence-band offsets in strained SiGeSn/Si layers with different tin contents.
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- Semiconductors, 2017, v. 51, n. 3, p. 329, doi. 10.1134/S1063782617030058
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Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition.
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- Semiconductors, 2017, v. 51, n. 3, p. 335, doi. 10.1134/S1063782617030125
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Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions.
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- Semiconductors, 2017, v. 51, n. 3, p. 344, doi. 10.1134/S1063782617030216
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Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO/insulator structures from the results of synchrotron investigations.
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- Semiconductors, 2017, v. 51, n. 3, p. 349, doi. 10.1134/S1063782617030241
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Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics.
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- Semiconductors, 2017, v. 51, n. 3, p. 353, doi. 10.1134/S1063782617030101
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Optical properties of hybrid quantum-well-dots nanostructures grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 3, p. 357, doi. 10.1134/S1063782617030198
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Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.
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- Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034
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Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.
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- Semiconductors, 2017, v. 51, n. 3, p. 367, doi. 10.1134/S1063782617030022
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A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum.
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- Semiconductors, 2017, v. 51, n. 3, p. 370, doi. 10.1134/S1063782617030083
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Current-voltage characteristics of high-voltage 4 H-SiC p - n - n diodes in the avalanche breakdown mode.
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- Semiconductors, 2017, v. 51, n. 3, p. 374, doi. 10.1134/S1063782617030095
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AlN/GaN heterostructures for normally-off transistors.
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- Semiconductors, 2017, v. 51, n. 3, p. 379, doi. 10.1134/S1063782617030277
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Pulsed laser deposition of AlGaAs and GaP thin films onto Si substrates for photoelectric converters.
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- Semiconductors, 2017, v. 51, n. 3, p. 387, doi. 10.1134/S1063782617030174
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Properties of ZnO:Er films obtained by the sol-gel method.
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- Semiconductors, 2017, v. 51, n. 3, p. 392, doi. 10.1134/S1063782617030186
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Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.
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- Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149
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Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures.
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- Semiconductors, 2017, v. 51, n. 3, p. 402, doi. 10.1134/S106378261703023X
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Effect of energy density on the target on SnO:Sb film properties when using a high-speed particle separator.
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- Semiconductors, 2017, v. 51, n. 3, p. 407, doi. 10.1134/S1063782617030228
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Single crystals of (FeInS) · (CuInS) alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion.
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- Semiconductors, 2017, v. 51, n. 3, p. 279, doi. 10.1134/S106378261703006X
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