Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 2

Results: 25

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe-SbTe chalcogenide semiconductors.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 146, doi. 10.1134/S1063782617020191

By:

Sherchenkov, A.;
Kozyukhin, S.;
Lazarenko, P.;
Babich, A.;
Bogoslovskiy, N.;
Sagunova, I.;
Redichev, E.

Publication type:

Article

Raman scattering in InP doped by Be-ion implantation.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 168, doi. 10.1134/S106378261702004X

By:

Avakyants, L.;
Bokov, P.;
Chervyakov, A.

Publication type:

Article

On the thermopower and thermomagnetic properties of ErSnSe solid solutions.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 153, doi. 10.1134/S1063782617020075

By:

Huseynov, J.;
Murguzov, M.;
Ismayilov, Sh.;
Mamedova, R.;
Gojayev, E.

Publication type:

Article

Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 163, doi. 10.1134/S1063782617020233

By:

Veinger, A.;
Tisnek, T.;
Kochman, I.;
Okulov, V.

Publication type:

Article

Field diffusion in disordered organic materials under conditions of occupied deep states.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 158, doi. 10.1134/S1063782617020129

By:

Nikitenko, V.;
Kudrov, A.

Publication type:

Article

Influence of the doping type and level on the morphology of porous Si formed by galvanic etching.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 173, doi. 10.1134/S1063782617020178

By:

Pyatilova, O.;
Gavrilov, S.;
Shilyaeva, Yu.;
Pavlov, A.;
Shaman, Yu.;
Dudin, A.

Publication type:

Article

Study of silicon doped with zinc ions and annealed in oxygen.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 178, doi. 10.1134/S1063782617020154

By:

Privezentsev, V.;
Kirilenko, E.;
Goryachev, A.;
Batrakov, A.

Publication type:

Article

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038

By:

Avakyants, L.;
Aslanyan, A.;
Bokov, P.;
Polozhentsev, K.;
Chervyakov, A.

Publication type:

Article

Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 184, doi. 10.1134/S1063782617020105

By:

Lenshin, A.;
Seredin, P.;
Kavetskaya, I.;
Minakov, D.;
Kashkarov, V.

Publication type:

Article

New mechanism of semiconductor polarization at the interface with an organic insulator.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 193, doi. 10.1134/S1063782617020245

By:

Yafyasov, A.;
Bogevolnov, V.;
Ryumtsev, E.;
Kovshik, A.;
Mikhailovski, V.

Publication type:

Article

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 196, doi. 10.1134/S1063782617020208

By:

Shuleiko, D.;
Zabotnov, S.;
Zhigunov, D.;
Zelenina, A.;
Kamenskih, I.;
Kashkarov, P.

Publication type:

Article

Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 203, doi. 10.1134/S106378261702021X

By:

Sitnikov, S.;
Kosolobov, S.;
Latyshev, A.

Publication type:

Article

Structural studies of ZnS:Cu (5 at %) nanocomposites in porous AlO of different thicknesses.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 207, doi. 10.1134/S1063782617020221

By:

Valeev, R.;
Trigub, A.;
Chukavin, A.;
Beltiukov, A.

Publication type:

Article

Thermal stability of hydrogenated small-diameter carbon nanotubes.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 213, doi. 10.1134/S1063782617020130

By:

Podlivaev, A.;
Openov, L.

Publication type:

Article

Analysis of the impact of non-1D effects on the gate switch-on current in 4 H-SiC thyristors.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 225, doi. 10.1134/S1063782617020257

By:

Yurkov, S.;
Mnatsakanov, T.;
Levinshtein, M.;
Tandoev, A.;
Palmour, J.

Publication type:

Article

On the theory of adsorption on graphene-like compounds.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 217, doi. 10.1134/S1063782617020051

By:

Davydov, S.

Publication type:

Article

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 232, doi. 10.1134/S1063782617020166

By:

Prudaev, I.;
Kopyev, V.;
Romanov, I.;
Oleynik, V.

Publication type:

Article

Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 239, doi. 10.1134/S1063782617020117

By:

Mynbaev, K.;
Bazhenov, N.;
Semakova, A.;
Mikhailova, M.;
Stoyanov, N.;
Kizhaev, S.;
Molchanov, S.;
Astakhova, A.;
Chernyaev, A.;
Lipsanen, H.;
Bougrov, V.

Publication type:

Article

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 245, doi. 10.1134/S1063782617020063

By:

Erofeev, E.;
Fedin, I.;
Kutkov, I.;
Yuryev, Yu.

Publication type:

Article

MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 249, doi. 10.1134/S1063782617020099

By:

Kuznetzov, P.;
Averin, S.;
Zhitov, V.;
Zakharov, L.;
Kotov, V.

Publication type:

Article

Specific features of waveguide recombination in laser structures with asymmetric barrier layers.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 254, doi. 10.1134/S1063782617020142

By:

Polubavkina, Yu.;
Zubov, F.;
Moiseev, E.;
Kryzhanovskaya, N.;
Maximov, M.;
Semenova, E.;
Yvind, K.;
Asryan, L.;
Zhukov, A.

Publication type:

Article

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 260, doi. 10.1134/S1063782617020269

By:

Zakgeim, A.;
Il'inskaya, N.;
Karandashev, S.;
Lavrov, A.;
Matveev, B.;
Remennyy, M.;
Stus', N.;
Usikova, A.;
Cherniakov, A.

Publication type:

Article

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 267, doi. 10.1134/S1063782617020087

By:

Kryzhanovskaya, N.;
Polubavkina, Yu.;
Nevedomskiy, V.;
Nikitina, E.;
Lazarenko, A.;
Egorov, A.;
Maximov, M.;
Moiseev, E.;
Zhukov, A.

Publication type:

Article

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 272, doi. 10.1134/S1063782617020026

By:

Arapov, Yu.;
Gudina, S.;
Klepikova, A.;
Neverov, V.;
Harus, G.;
Shelushinina, N.;
Yakunin, M.

Publication type:

Article

Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 139, doi. 10.1134/S106378261702018X

By:

Romaka, V.;
Rogl, P.;
Kaczorowski, D.;
Krayovskyy, V.;
Stadnyk, Yu.;
Horyn, A.

Publication type:

Article