Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 1
Results: 24
Investigations of CuFeS semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field.
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- Semiconductors, 2017, v. 51, n. 1, p. 4, doi. 10.1134/S1063782617010134
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Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices.
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- Semiconductors, 2017, v. 51, n. 1, p. 8, doi. 10.1134/S1063782617010250
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Two-tone nonlinear electrostatic waves in the quantum electron-hole plasma of semiconductors.
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- Semiconductors, 2017, v. 51, n. 1, p. 14, doi. 10.1134/S1063782617010079
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Lifetime of excess electrons in Cu-Zn-Sn-Se powders.
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- Semiconductors, 2017, v. 51, n. 1, p. 18, doi. 10.1134/S1063782617010171
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Atomic and electronic structure of the CdTe(111) B-(2√3 × 4) orthogonal surface.
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- Semiconductors, 2017, v. 51, n. 1, p. 23, doi. 10.1134/S106378261701002X
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On the growth, structure, and surface morphology of epitaxial CdTe films.
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- Semiconductors, 2017, v. 51, n. 1, p. 34, doi. 10.1134/S1063782617010183
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Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.
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- Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109
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Spin-dependent tunneling recombination in heterostructures with a magnetic layer.
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- Semiconductors, 2017, v. 51, n. 1, p. 43, doi. 10.1134/S1063782617010067
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Formation and properties of the buried isolating silicon-dioxide layer in double-layer 'porous silicon-on-insulator' structures.
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- Semiconductors, 2017, v. 51, n. 1, p. 49, doi. 10.1134/S1063782617010043
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Study of the parameters of nanoscale layers in nanoheterostructures based on II-VI semiconductor compounds.
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- Semiconductors, 2017, v. 51, n. 1, p. 54, doi. 10.1134/S1063782617010080
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Fabrication of oxide heterostructures for promising solar cells of a new generation.
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- Semiconductors, 2017, v. 51, n. 1, p. 61, doi. 10.1134/S1063782617010031
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Optimization of the parameters of power sources excited by β-radiation.
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- Semiconductors, 2017, v. 51, n. 1, p. 66, doi. 10.1134/S1063782617010055
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Effect of active-region 'volume' on the radiative properties of laser heterostructures with radiation output through the substrate.
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- Semiconductors, 2017, v. 51, n. 1, p. 73, doi. 10.1134/S1063782617010158
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Anodes for Li-ion batteries based on p-Si with self-organized macropores.
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- Semiconductors, 2017, v. 51, n. 1, p. 78, doi. 10.1134/S1063782617010195
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Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III-V solar cells.
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- Semiconductors, 2017, v. 51, n. 1, p. 88, doi. 10.1134/S1063782617010146
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Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 1, p. 93, doi. 10.1134/S1063782617010201
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InGaN/GaN light-emitting diode microwires of submillimeter length.
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- Semiconductors, 2017, v. 51, n. 1, p. 100, doi. 10.1134/S1063782617010122
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Surface texture of single-crystal silicon oxidized under a thin VO layer.
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- Semiconductors, 2017, v. 51, n. 1, p. 104, doi. 10.1134/S106378261701016X
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Nanoscale CuO films: Radio-frequency magnetron sputtering and structural and optical studies.
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- Semiconductors, 2017, v. 51, n. 1, p. 110, doi. 10.1134/S1063782617010110
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Epitaxial AlGaAs:Mg alloys with different conductivity types.
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- Semiconductors, 2017, v. 51, n. 1, p. 122, doi. 10.1134/S1063782617010213
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PEALD grown high-k ZrO thin films on SiC group IV compound semiconductor.
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- Semiconductors, 2017, v. 51, n. 1, p. 131, doi. 10.1134/S1063782617010092
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Application of BN and BP as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study.
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- Semiconductors, 2017, v. 51, n. 1, p. 134, doi. 10.1134/S1063782617010225
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Diffusion of interstitial magnesium in dislocation-free silicon.
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- Semiconductors, 2017, v. 51, n. 1, p. 1, doi. 10.1134/S1063782617010237
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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire.
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- Semiconductors, 2017, v. 51, n. 1, p. 115, doi. 10.1134/S1063782617010249
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