Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 13

Results: 13

Improving the functional characteristics of gallium nitride during vapor phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1697, doi. 10.1134/S1063782616130108

By:

Vigdorovich, E.

Publication type:

Article

Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1702, doi. 10.1134/S1063782616130029

By:

Atdaev, A.;
Danilyuk, A.;
Labunov, V.;
Prischepa, S.;
Pavlov, A.;
Basaev, A.;
Shaman, Yu.

Publication type:

Article

Methods of accounting for inclusion-shape randomness in calculating the effective dielectric characteristics of heterogeneous textured materials.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1708, doi. 10.1134/S1063782616130121

By:

Zavgorodnyaya, M.;
Lavrov, I.

Publication type:

Article

Method of investigation of galvanomagnetic properties of CdHgTe and CdHgTe/CdZnTe.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1716, doi. 10.1134/S1063782616130030

By:

Golubyatnikov, V.;
Lysenko, A.;
Belov, A.;
Kanevskii, V.

Publication type:

Article

Effect of ionic Ag transfer on localization of metal-assisted etching of silicon surface.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1720, doi. 10.1134/S1063782616130078

By:

Pyatilova, O.;
Sysa, A.;
Gavrilov, S.;
Yakimova, L.;
Pavlov, A.;
Belov, A.;
Raskin, A.

Publication type:

Article

Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1726, doi. 10.1134/S106378261613011X

By:

Yafarov, R.;
Gornev, E.;
Orlov, S.;
Timoshenkov, S.;
Timoshenkov, V.;
Timoshenkov, A.

Publication type:

Article

Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1729, doi. 10.1134/S1063782616130133

By:

Zhukov, A.;
Popova, E.;
Gerasimenko, N.

Publication type:

Article

The effect of the electron-phonon interaction on reverse currents of GaAs-based p-n junctions.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1734, doi. 10.1134/S1063782616130145

By:

Zhukov, A.

Publication type:

Article

Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1738, doi. 10.1134/S1063782616130054

By:

Levin, D.;
Bobrinetskiy, I.;
Emelianov, A.;
Nevolin, V.;
Romashkin, A.;
Petuhov, V.

Publication type:

Article

Nanostructured current sources based on carbon nanotubes excited by β radiation.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1744, doi. 10.1134/S106378261613008X

By:

Saurov, A.;
Bulyarskiy, S.;
Risovaniy, V.;
Pavlov, A.;
Abanin, I.;
Kitsyuk, E.;
Shamanaev, A.;
Lebedev, E.

Publication type:

Article

Formation of carbon nanotubes on an amorphous NiTaN alloy film by chemical vapor deposition.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1748, doi. 10.1134/S1063782616130042

By:

Gromov, D.;
Dubkov, S.;
Pavlov, A.;
Skorik, S.;
Trifonov, A.;
Kirilenko, E.;
Shulyat'ev, A.;
Shaman, Yu.;
Rygalin, B.

Publication type:

Article

Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1753, doi. 10.1134/S1063782616130066

By:

Lovygin, M.;
Borgardt, N.;
Bugaev, A.;
Volkov, R.;
Seibt, M.

Publication type:

Article

Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1759, doi. 10.1134/S1063782616130091

By:

Usanov, D.;
Nikitov, S.;
Skripal, A.;
Ponomarev, D.;
Latysheva, E.

Publication type:

Article