Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 8

Results: 27

Temperature dependence of the hall coefficient in the ВiSb System ( x = 0.06, 0.12).
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 996, doi. 10.1134/S1063782616080248
By:
- Tairov, B.;
- Gasanova, X.;
- Selim-zade, R.
Publication type:
Article
Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1001, doi. 10.1134/S1063782616080194
By:
- Polvonov, B.;
- Yuldashev, N.
Publication type:
Article
Study of the impurity photoconductivity in p-InSb using epitaxial p contacts.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1005, doi. 10.1134/S1063782616080108
By:
- Eminov, Sh.
Publication type:
Article
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1010, doi. 10.1134/S1063782616080029
By:
- Abdullin, Kh.;
- Gabdullin, M.;
- Gritsenko, L.;
- Ismailov, D.;
- Kalkozova, Zh.;
- Kumekov, S.;
- Mukash, Zh.;
- Sazonov, A.;
- Terukov, E.
Publication type:
Article
Conduction in titanium dioxide films and metal-TiO-Si structures.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1015, doi. 10.1134/S1063782616080133
By:
- Kalygina, V.;
- Egorova, I.;
- Prudaev, I.;
- Tolbanov, O.
Publication type:
Article
Electrical and photoelectric properties of n-TiN/ p-HgInTe heterostructures.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1020, doi. 10.1134/S1063782616080236
By:
- Solovan, M.;
- Mostovyi, A.;
- Brus, V.;
- Maistruk, E.;
- Maryanchuk, P.
Publication type:
Article
Room temperature de Haas-van Alphen effect in silicon nanosandwiches.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1025, doi. 10.1134/S1063782616080273
By:
- Bagraev, N.;
- Grigoryev, V.;
- Klyachkin, L.;
- Malyarenko, A.;
- Mashkov, V.;
- Romanov, V.
Publication type:
Article
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1034, doi. 10.1134/S1063782616080200
By:
- Samila, A.;
- Lastivka, G.;
- Khandozhko, V.;
- Kovalyuk, Z.
Publication type:
Article
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1038, doi. 10.1134/S1063782616080042
By:
- Aleksandrov, I.;
- Mansurov, V.;
- Zhuravlev, K.
Publication type:
Article
Elastic strains and delocalized optical phonons in AlN/GaN superlattices.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1043, doi. 10.1134/S1063782616080169
By:
- Pankin, D.;
- Smirnov, M.;
- Davydov, V.;
- Smirnov, A.;
- Zavarin, E.;
- Lundin, W.
Publication type:
Article
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1049, doi. 10.1134/S1063782616080170
By:
- Pokhabov, D.;
- Pogosov, A.;
- Budantsev, M.;
- Zhdanov, E.;
- Bakarov, A.
Publication type:
Article
Effect of uniaxial deformation on the current-voltage characteristic of a p-Ge/ n-GaAs heterostructure.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1054, doi. 10.1134/S106378261608011X
By:
- Gadzhialiev, M.;
- Pirmagomedov, Z.;
- Efendieva, T.
Publication type:
Article
Carrier velocity effect on carbon nanotube Schottky contact.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1056, doi. 10.1134/S1063782616080285
By:
- Fathi, Amir;
- Ahmadi, M.;
- Ismail, Razali
Publication type:
Article
Electromagnetic radiation of electrons in corrugated graphene.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1060, doi. 10.1134/S1063782616080157
By:
- Ktitorov, S.;
- Myhamadiarov, R.
Publication type:
Article
Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1065, doi. 10.1134/S1063782616080066
By:
- Antonova, I.;
- Kotin, I.;
- Popov, V.;
- Vasileva, F.;
- Kapitonov, A.;
- Smagulova, S.
Publication type:
Article
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μ c-Si:H.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1074, doi. 10.1134/S1063782616080030
By:
- Abramov, A.;
- Andronikov, D.;
- Emtsev, K.;
- Kukin, A.;
- Semenov, A.;
- Terukova, E.;
- Titov, A.;
- Yakovlev, S.
Publication type:
Article
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1079, doi. 10.1134/S1063782616080224
By:
- Sergeev, V.;
- Hodakov, A.
Publication type:
Article
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1085, doi. 10.1134/S1063782616080091
By:
- Betekbaev, A.;
- Mukashev, B.;
- Pelissier, L.;
- Lay, P.;
- Fortin, G.;
- Bounaas, L.;
- Skakov, D.;
- Kalygulov, D.;
- Turmagambetov, T.;
- Lee, V.
Publication type:
Article
Transition times between the extremum points of the current-voltage characteristic of a resonant tunneling diode with hysteresis.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1092, doi. 10.1134/S1063782616080121
By:
- Grishakov, K.;
- Elesin, V.
Publication type:
Article
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1097, doi. 10.1134/S106378261608008X
By:
- Babichev, A.;
- Zhang, H.;
- Guan, N.;
- Egorov, A.;
- Julien, F.;
- Messanvi, A.;
- Durand, C.;
- Eymery, J.;
- Tchernycheva, M.
Publication type:
Article
Heterojunction low-barrier gaas diodes with an improved reverse I-V characteristic.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1102, doi. 10.1134/S106378261608025X
By:
- Yunusov, I.;
- Kagadei, V.;
- Fazleeva, A.;
- Arykov, V.
Publication type:
Article
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1107, doi. 10.1134/S1063782616080054
By:
- Aleksandrov, P.;
- Baranova, E.;
- Budaragin, V.
Publication type:
Article
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1112, doi. 10.1134/S1063782616080212
By:
- Serafimovich, P.;
- Stepikhova, M.;
- Kazanskiy, N.;
- Gusev, S.;
- Egorov, A.;
- Skorokhodov, E.;
- Krasilnik, Z.
Publication type:
Article
On a two-layer SiN/SiO dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1117, doi. 10.1134/S1063782616080078
By:
- Arutyunyan, S.;
- Pavlov, A.;
- Pavlov, B.;
- Tomosh, K.;
- Fedorov, Yu.
Publication type:
Article
Formation of donors in germanium-silicon alloys implanted with hydrogen ions with different energies.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1122, doi. 10.1134/S1063782616080182
By:
- Pokotilo, Yu.;
- Petukh, A.;
- Litvinov, V.;
- Markevich, V.;
- Abrosimov, N.;
- Kamyshan, A.;
- Giro, A.;
- Solyanikova, K.
Publication type:
Article
Changes in the conductivity of lead-selenide thin films after plasma etching.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1125, doi. 10.1134/S1063782616080261
By:
- Zimin, S.;
- Amirov, I.;
- Naumov, V.
Publication type:
Article
Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 989, doi. 10.1134/S1063782616080145
By:
- Karabeshkin, K.;
- Karaseov, P.;
- Titov, A.
Publication type:
Article