Radiation-stimulated processes in transistor temperature sensors.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 678, doi. 10.1134/S1063782616050183
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 5
Results: 25
1
2
Localization of the interband transitions in the bulk of the Brillouin zone of III-V compound crystals.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 572, doi. 10.1134/S1063782616050213
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- Publication type:
- Article
3
X-ray conductivity of ZnSe single crystals.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 579, doi. 10.1134/S1063782616050067
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- Publication type:
- Article
4
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250-1400-nm spectral range.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 612, doi. 10.1134/S1063782616050079
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- Publication type:
- Article
5
Study of the correlation properties of the surface structure of nc-Si/ a-Si:H films with different fractions of the crystalline phase.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 590, doi. 10.1134/S1063782616050031
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- Publication type:
- Article
6
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 586, doi. 10.1134/S106378261605002X
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- Publication type:
- Article
7
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 607, doi. 10.1134/S1063782616050110
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- Publication type:
- Article
8
A new simulation model for inhomogeneous Au/ n-GaN structure.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 616, doi. 10.1134/S1063782616050134
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- Publication type:
- Article
9
Atomic steps on an ultraflat Si(111) surface upon sublimation.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 596, doi. 10.1134/S1063782616050201
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- Publication type:
- Article
10
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 601, doi. 10.1134/S1063782616050043
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- Publication type:
- Article
11
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high- K oxide/SiO/Si structure.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 671, doi. 10.1134/S1063782616050249
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- Publication type:
- Article
12
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 621, doi. 10.1134/S1063782616050171
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- Publication type:
- Article
13
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 688, doi. 10.1134/S1063782616050146
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- Publication type:
- Article
14
Lifetime of excitons localized in Si nanocrystals in amorphous silicon.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 627, doi. 10.1134/S1063782616050092
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- Publication type:
- Article
15
Biosensor properties of SOI nanowire transistors with a PEALD AlO dielectric protective layer.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 632, doi. 10.1134/S1063782616050195
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- Publication type:
- Article
16
Photodiode 1 × 64 linear array based on a double p-InAsSbP/ n-InAsSb/ n-InAs heterostructure.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 646, doi. 10.1134/S1063782616050122
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- Publication type:
- Article
17
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 639, doi. 10.1134/S1063782616050237
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- Publication type:
- Article
18
GaAs/InGaAsN heterostructures for multi-junction solar cells.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 652, doi. 10.1134/S106378261605016X
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- Publication type:
- Article
19
Isothermal current-voltage characteristics of high-voltage 4 H-SiC junction barrier Schottky rectifiers.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 656, doi. 10.1134/S1063782616050158
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- Publication type:
- Article
20
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 694, doi. 10.1134/S1063782616050080
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- Publication type:
- Article
21
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 662, doi. 10.1134/S1063782616050262
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- Publication type:
- Article
22
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n-GaN substrates.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 699, doi. 10.1134/S1063782616050250
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- Publication type:
- Article
23
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 667, doi. 10.1134/S1063782616050225
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- Publication type:
- Article
24
Acanthite-argentite transformation in nanocrystalline silver sulfide and the AgS/Ag nanoheterostructure.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 682, doi. 10.1134/S1063782616050109
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- Publication type:
- Article
25
Anisotropy of the thermal expansion of CuInSe single crystals in two structural modifications.
- Published in:
- Semiconductors, 2016, v. 50, n. 5, p. 567, doi. 10.1134/S1063782616050055
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- Publication type:
- Article