Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 2
Results: 26
Compositional dependence of the band gap of (CuInS) · (FeInS) alloys.
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- Semiconductors, 2016, v. 50, n. 2, p. 154, doi. 10.1134/S1063782616020068
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Photoluminescence properties of thallium-containing GeSe and GeSe vitreous semiconductors.
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- Semiconductors, 2016, v. 50, n. 2, p. 158, doi. 10.1134/S1063782616020044
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On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field.
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- Semiconductors, 2016, v. 50, n. 2, p. 162, doi. 10.1134/S1063782616020202
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Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy.
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- Semiconductors, 2016, v. 50, n. 2, p. 167, doi. 10.1134/S106378261602007X
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Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 208, doi. 10.1134/S1063782616020160
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Halogen adsorption at an As-stabilized β2-GaAs (001)-(2 × 4) surface.
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- Semiconductors, 2016, v. 50, n. 2, p. 171, doi. 10.1134/S1063782616020056
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Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 185, doi. 10.1134/S1063782616020123
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Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures.
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- Semiconductors, 2016, v. 50, n. 2, p. 191, doi. 10.1134/S1063782616020020
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Laser-assisted simulation of transient radiation effects in heterostructure components based on AB semiconductor compounds.
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- Semiconductors, 2016, v. 50, n. 2, p. 222, doi. 10.1134/S1063782616020093
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GaAs structures with a gate dielectric based on aluminum-oxide layers.
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- Semiconductors, 2016, v. 50, n. 2, p. 204, doi. 10.1134/S106378261602010X
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On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin.
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- Semiconductors, 2016, v. 50, n. 2, p. 180, doi. 10.1134/S1063782616020214
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Composition and optical properties of amorphous a-SiO:H films with silicon nanoclusters.
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- Semiconductors, 2016, v. 50, n. 2, p. 212, doi. 10.1134/S1063782616020251
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- Article
Effect of transverse electric field on the longitudinal current-voltage characteristic of graphene superlattice.
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- Semiconductors, 2016, v. 50, n. 2, p. 217, doi. 10.1134/S1063782616020147
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Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081
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PbEuTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4-5 μm.
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- Semiconductors, 2016, v. 50, n. 2, p. 228, doi. 10.1134/S1063782616020172
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Field-effect transistor with 2D carrier systems in the gate and channel.
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- Semiconductors, 2016, v. 50, n. 2, p. 235, doi. 10.1134/S1063782616020184
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Si:Si LEDs with room-temperature dislocation-related luminescence.
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- Semiconductors, 2016, v. 50, n. 2, p. 240, doi. 10.1134/S1063782616020238
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.
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- Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263
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Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.
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- Semiconductors, 2016, v. 50, n. 2, p. 249, doi. 10.1134/S1063782616020111
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Electroluminescence properties of LEDs based on electron-irradiated p-Si.
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- Semiconductors, 2016, v. 50, n. 2, p. 252, doi. 10.1134/S106378261602024X
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Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon.
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- Semiconductors, 2016, v. 50, n. 2, p. 257, doi. 10.1134/S1063782616020226
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Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements.
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- Semiconductors, 2016, v. 50, n. 2, p. 261, doi. 10.1134/S1063782616020159
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Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic AlO matrices.
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- Semiconductors, 2016, v. 50, n. 2, p. 266, doi. 10.1134/S1063782616020275
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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride.
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- Semiconductors, 2016, v. 50, n. 2, p. 271, doi. 10.1134/S1063782616020135
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Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries.
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- Semiconductors, 2016, v. 50, n. 2, p. 276, doi. 10.1134/S1063782616020032
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On the theory of the two-photon linear photovoltaic effect in n-GaP.
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- Semiconductors, 2016, v. 50, n. 2, p. 145, doi. 10.1134/S1063782616020196
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