Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 11

Results: 25

SiN layers for the in-situ passivation of GaN-based HEMT structures.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251

By:

Yunin, P.;
Drozdov, Yu.;
Drozdov, M.;
Korolev, S.;
Okhapkin, A.;
Khrykin, O.;
Shashkin, V.

Publication type:

Article

Temperature quenching of spontaneous emission in tunnel-injection nanostructures.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1483, doi. 10.1134/S1063782615110214

By:

Talalaev, V.;
Novikov, B.;
Cirlin, G.;
Leipner, H.

Publication type:

Article

Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081

By:

Firsov, D.;
Vorobjev, L.;
Vinnichenko, M.;
Balagula, R.;
Kulagina, M.;
Vasil'iev, A.

Publication type:

Article

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1516, doi. 10.1134/S1063782615110238

By:

Tsatsulnikov, A.;
Lundin, W.;
Sakharov, A.;
Zavarin, E.;
Usov, S.;
Nikolaev, A.;
Sinitsyn, M.;
Cherkashin, N.;
Karpov, S.

Publication type:

Article

Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1400, doi. 10.1134/S1063782615110044

By:

Bolshakov, A.;
Chaldyshev, V.;
Babichev, A.;
Kudryashov, D.;
Gudovskikh, A.;
Morozov, I.;
Sobolev, M.;
Nikitina, E.

Publication type:

Article

Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1405, doi. 10.1134/S1063782615110020

By:

Antonov, A.;
Drozdov, M.;
Novikov, A.;
Yurasov, D.

Publication type:

Article

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1410, doi. 10.1134/S106378261511024X

By:

Yablonskiy, A.;
Baidakova, N.;
Novikov, A.;
Lobanov, D.;
Shaleev, M.

Publication type:

Article

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1415, doi. 10.1134/S1063782615110263

By:

Yurasov, D.;
Bobrov, A.;
Daniltsev, V.;
Novikov, A.;
Pavlov, D.;
Skorokhodov, E.;
Shaleev, M.;
Yunin, P.

Publication type:

Article

On a semiconductor laser with a p- n tunnel junction with radiation emission through the substrate.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1440, doi. 10.1134/S1063782615110123

By:

Kolpakov, D.;
Zvonkov, B.;
Nekorkin, S.;
Dikareva, N.;
Aleshkin, V.;
Dubinov, A.

Publication type:

Article

On the radiation resistance of planar Gunn diodes with δ-doped layers.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1459, doi. 10.1134/S1063782615110160

By:

Obolenskaya, E.;
Churin, A.;
Obolensky, S.;
Murel, A.;
Shashkin, V.

Publication type:

Article

Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1430, doi. 10.1134/S106378261511010X

By:

Kalentyeva, I.;
Zvonkov, B.;
Vikhrova, O.;
Danilov, Yu.;
Demina, P.;
Dorokhin, M.;
Zdoroveyshchev, A.

Publication type:

Article

Temperature switching of cavity modes in InN microcrystals.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1435, doi. 10.1134/S1063782615110111

By:

Kazanov, D.;
Kaibyshev, V.;
Davydov, V.;
Smirnov, A.;
Jmerik, V.;
Kuznetsova, N.;
Kopiev, P.;
Ivanov, S.;
Shubina, T.

Publication type:

Article

Hodographs in diode-structure diagnostics.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1443, doi. 10.1134/S1063782615110196

By:

Shmagin, V.;
Kudryavtsev, K.;
Novikov, A.;
Shengurov, D.;
Yurasov, D.;
Krasilnik, Z.

Publication type:

Article

Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1448, doi. 10.1134/S1063782615110147

By:

Malysheva, E.;
Dorokhin, M.;
Ved', M.;
Kudrin, A.;
Zdoroveishchev, A.

Publication type:

Article

Tandem photovoltaic cells with a composite intermediate layer.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1453, doi. 10.1134/S1063782615110226

By:

Travkin, V.;
Pakhomov, G.;
Luk'anov, A.;
Stuzhin, P.

Publication type:

Article

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6-5.8)-μm under current pumping.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1527, doi. 10.1134/S106378261511007X

By:

Egorov, A.;
Babichev, A.;
Karachinsky, L.;
Novikov, I.;
Nikitina, E.;
Tchernycheva, M.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Dynamics of carrier recombination in a semiconductor laser structure.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1531, doi. 10.1134/S1063782615110056

By:

Dzhioev, R.;
Kavokin, K.;
Kusrayev, Yu.;
Poletaev, N.

Publication type:

Article

Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1468, doi. 10.1134/S1063782615110172

By:

Polischuk, O.;
Popov, V.;
Otsuji, T.

Publication type:

Article

Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1473, doi. 10.1134/S1063782615110159

By:

Mezdrogina, M.;
Eremenko, M.;
Levitskii, V.;
Petrov, V.;
Terukov, E.;
Kaidashev, E.;
Langusov, N.

Publication type:

Article

Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1393, doi. 10.1134/S1063782615110032

By:

Averin, S.;
Kuznetzov, P.;
Zhitov, V.;
Zakharov, L.;
Kotov, V.;
Alkeev, N.;
Gladisheva, N.

Publication type:

Article

Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1493, doi. 10.1134/S1063782615110135

By:

Levitskii, V.;
Lenshin, A.;
Seredin, P.;
Terukov, E.

Publication type:

Article

Spatial hole burning and spectral stability of a quantum-dot laser.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1499, doi. 10.1134/S1063782615110184

By:

Savelyev, A.;
Korenev, V.;
Maximov, M.;
Zhukov, A.

Publication type:

Article

Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1506, doi. 10.1134/S1063782615110202

By:

Sokolova, Z.;
Pikhtin, N.;
Tarasov, I.;
Asryan, L.

Publication type:

Article

Dynamic characteristics of 4 H-SiC drift step recovery diodes.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1511, doi. 10.1134/S1063782615110093

By:

Ivanov, P.;
Kon'kov, O.;
Samsonova, T.;
Potapov, A.;
Grekhov, I.

Publication type:

Article

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1522, doi. 10.1134/S1063782615110068

By:

Egorov, A.;
Karachinsky, L.;
Novikov, I.;
Babichev, A.;
Nevedomskiy, V.;
Bugrov, V.

Publication type:

Article