Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 10

Results: 27

New mechanism of structuring associated with the quasi-merohedral twinning by an example of CaLaF ordered solid solutions.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1259, doi. 10.1134/S1063782615100139

By:

Maksimov, S.;
Maksimov, K.;
Sukhov, N.;
Lovygin, M.

Publication type:

Article

Crossover between transport mechanisms in the region of the transition from sublinearity to superlinearity of the AC-conductivity frequency dependence for disordered semiconductors.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1270, doi. 10.1134/S1063782615100206

By:

Ormont, M.

Publication type:

Article

Magnetic and electrical properties of FeAgInS single crystals.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1276, doi. 10.1134/S106378261510005X

By:

Bodnar, I.;
Trukhanov, S.;
Barugu, T.

Publication type:

Article

Investigation of current instabilities in MnSi-Si:Mn-MnSi and MnSi-Si:Mn-M heterojunctions.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1281, doi. 10.1134/S1063782615100097

By:

Kamilov, T.;
Aksenova, L.;
Sharipov, B.;
Ernst, I.

Publication type:

Article

Increase in the diffusion length of minority carriers in AlGaN alloys ( = 0-0.1) fabricated by ammonia molecular beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1285, doi. 10.1134/S1063782615100140

By:

Malin, T.;
Gilinsky, A.;
Mansurov, V.;
Protasov, D.;
Kozhuhov, A.;
Yakimov, E.;
Zhuravlev, K.

Publication type:

Article

Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1290, doi. 10.1134/S106378261510022X

By:

Reutov, V.;
Dmitriev, S.;
Sohatsky, A.;
Zaluzhnyi, A.

Publication type:

Article

Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator-metal phase transition.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1294, doi. 10.1134/S1063782615100267

By:

Veinger, A.;
Zabrodskii, A.;
Makarova, T.;
Tisnek, T.;
Goloshchapov, S.;
Semenikhin, P.

Publication type:

Article

Anisotropic mixed hole scattering mechanism in SbTeSe crystals (0 ≤ x ≤ 0.1) according to the data of the Nernst-Ettingshausen and seebeck effects.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1302, doi. 10.1134/S1063782615100188

By:

Nemov, S.;
Blagikh, N.;
Allahkhah, A.;
Ivanova, L.

Publication type:

Article

On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1307, doi. 10.1134/S1063782615100061

By:

Brudnyi, V.;
Sarkisov, S.;
Kosobutsky, A.

Publication type:

Article

Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1311, doi. 10.1134/S1063782615100218

By:

Pokutnyi, S.;
Kulchin, Yu.;
Dzyuba, V.

Publication type:

Article

Density dependence of electron mobility in the accumulation mode for fully depleted SOI films.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1316, doi. 10.1134/S1063782615100176

By:

Naumova, O.;
Zaitseva, E.;
Fomin, B.;
Ilnitsky, M.;
Popov, V.

Publication type:

Article

Density of surface states in colloidal CdSe nanoplatelets.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1323, doi. 10.1134/S1063782615100103

By:

Katsaba, A.;
Fedyanin, V.;
Ambrozevich, S.;
Vitukhnovsky, A.;
Sokolikova, M.;
Vasiliev, R.

Publication type:

Article

Structure and optical transmission spectra of ZnS-SiO nanocomposite films deposited at low temperatures.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1327, doi. 10.1134/S1063782615100115

By:

Krylov, P.;
Zakirova, R.;
Knyazev, I.;
Kostenkov, N.;
Romanov, E.;
Fedotova, I.

Publication type:

Article

Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1332, doi. 10.1134/S1063782615100024

By:

Bakhadyrkhanov, M.;
Isamov, S.;
Iliev, Kh.;
Kamalov, Kh.

Publication type:

Article

Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1335, doi. 10.1134/S1063782615100243

By:

Sobolev, M.;
Buyalo, M.;
Nevedomskiy, V.;
Zadiranov, Yu.;
Zolotareva, R.;
Vasil'ev, A.;
Ustinov, V.;
Portnoi, E.

Publication type:

Article

Radiation hardness of n-GaN schottky diodes.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1341, doi. 10.1134/S1063782615100127

By:

Lebedev, A.;
Belov, S.;
Mynbaeva, M.;
Strel'chuk, A.;
Bogdanova, E.;
Makarov, Yu.;
Usikov, A.;
Kurin, S.;
Barash, I.;
Roenkov, A.;
Kozlovski, V.

Publication type:

Article

Polaron mass of charge carriers in semiconductor quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1344, doi. 10.1134/S1063782615100152

By:

Maslov, A.;
Proshina, O.

Publication type:

Article

Current-voltage characteristics of disordered organic layers under space-charge-limited conditions based on the transport level concept.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1348, doi. 10.1134/S106378261510019X

By:

Nikitenko, V.;
Saunina, A.

Publication type:

Article

X-ray fluorescence analysis of GeSe, AsSe, and GeAsSe glasses using electronic excitation.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1352, doi. 10.1134/S1063782615100255

By:

Terukov, E.;
Seregin, P.;
Marchenko, A.;
Zhilina, D.;
Bobokhuzhaev, K.

Publication type:

Article

Zinc-oxide-based nanostructured materials for heterostructure solar cells.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1357, doi. 10.1134/S1063782615100048

By:

Bobkov, A.;
Maximov, A.;
Moshnikov, V.;
Somov, P.;
Terukov, E.

Publication type:

Article

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1361, doi. 10.1134/S1063782615100279

By:

Wu, Yi-Chen;
Tsai, Jung-Hui;
Chiang, Te-Kuang;
Wang, Fu-Min

Publication type:

Article

Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1365, doi. 10.1134/S1063782615100231

By:

Shengurov, V.;
Chalkov, V.;
Denisov, S.;
Alyabina, N.;
Guseinov, D.;
Trushin, V.;
Gorshkov, A.;
Volkova, N.;
Ivanova, M.;
Kruglov, A.;
Filatov, D.

Publication type:

Article

Whispering gallery modes in a spherical microcavity with a photoluminescent shell.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1369, doi. 10.1134/S1063782615100085

By:

Grudinkin, S.;
Dontsov, A.;
Feoktistov, N.;
Baranov, M.;
Bogdanov, K.;
Averkiev, N.;
Golubev, V.

Publication type:

Article

Study of silicon production processes and development of solar-cell fabrication technologies.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1375, doi. 10.1134/S1063782615100164

By:

Mukashev, B.;
Betekbaev, A.;
Kalygulov, D.;
Pavlov, A.;
Skakov, D.

Publication type:

Article

Properties of AlN films deposited by reactive ion-plasma sputtering.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1383, doi. 10.1134/S1063782615100036

By:

Bert, N.;
Bondarev, A.;
Zolotarev, V.;
Kirilenko, D.;
Lubyanskiy, Ya.;
Lyutetskiy, A.;
Slipchenko, S.;
Petrunov, A.;
Pikhtin, N.;
Ayusheva, K.;
Arsentyev, I.;
Tarasov, I.

Publication type:

Article

Metamorphic distributed Bragg reflectors for the 1440-1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1388, doi. 10.1134/S1063782615100073

By:

Egorov, A.;
Karachinsky, L.;
Novikov, I.;
Babichev, A.;
Berezovskaya, T.;
Nevedomskiy, V.

Publication type:

Article

Structural properties of ZnO:Al films produced by the sol-gel technique.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1253, doi. 10.1134/S1063782615100280

By:

Zaretskaya, E.;
Gremenok, V.;
Semchenko, A.;
Sidsky, V.;
Juskenas, R.

Publication type:

Article