Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 9
Results: 25
Negative differential conductivity in n-Si structures with contacts asymmetric in area.
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- Semiconductors, 2015, v. 49, n. 9, p. 1125, doi. 10.1134/S1063782615090237
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On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects.
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- Semiconductors, 2015, v. 49, n. 9, p. 1129, doi. 10.1134/S1063782615090110
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Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory.
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- Semiconductors, 2015, v. 49, n. 9, p. 1134, doi. 10.1134/S1063782615090225
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Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon Si:B.
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- Semiconductors, 2015, v. 49, n. 9, p. 1140, doi. 10.1134/S1063782615090158
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On the band gap of CuZnSn(SSe) alloys.
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- Semiconductors, 2015, v. 49, n. 9, p. 1145, doi. 10.1134/S1063782615090079
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Specific features of the optical and photoelectric properties of nanocrystalline indium oxide.
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- Semiconductors, 2015, v. 49, n. 9, p. 1149, doi. 10.1134/S1063782615090109
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Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation.
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- Semiconductors, 2015, v. 49, n. 9, p. 1154, doi. 10.1134/S1063782615090043
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Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation.
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- Semiconductors, 2015, v. 49, n. 9, p. 1160, doi. 10.1134/S1063782615090055
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Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4 H-SiC (CVD).
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- Semiconductors, 2015, v. 49, n. 9, p. 1163, doi. 10.1134/S106378261509016X
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Features of the electrical conductivity of TlInSe under photoexcitation and X-ray excitation.
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- Semiconductors, 2015, v. 49, n. 9, p. 1166, doi. 10.1134/S1063782615090195
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Temperature dependence of the carrier lifetime in narrow-gap CdHgTe solid solutions: Radiative recombination.
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- Semiconductors, 2015, v. 49, n. 9, p. 1170, doi. 10.1134/S1063782615090067
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An origin of orange (2 eV) photoluminescence in SiO films implanted with high Si-ion doses.
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- Semiconductors, 2015, v. 49, n. 9, p. 1176, doi. 10.1134/S1063782615090250
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On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN.
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- Semiconductors, 2015, v. 49, n. 9, p. 1181, doi. 10.1134/S1063782615090213
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On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects.
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- Semiconductors, 2015, v. 49, n. 9, p. 1187, doi. 10.1134/S1063782615090080
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Controlled exciton transfer between quantum dots with acoustic phonons taken into account.
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- Semiconductors, 2015, v. 49, n. 9, p. 1191, doi. 10.1134/S1063782615090134
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On the cascade capture of electrons at donors in GaAs quantum wells.
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- Semiconductors, 2015, v. 49, n. 9, p. 1197, doi. 10.1134/S106378261509002X
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Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy.
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- Semiconductors, 2015, v. 49, n. 9, p. 1202, doi. 10.1134/S1063782615090031
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Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.
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- Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122
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Photoluminescence of heterostructures containing an InGaAs quantum well with a high in content at different excitation powers.
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- Semiconductors, 2015, v. 49, n. 9, p. 1218, doi. 10.1134/S1063782615090183
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Defect-related luminescence in silicon p- n junctions.
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- Semiconductors, 2015, v. 49, n. 9, p. 1222, doi. 10.1134/S1063782615090171
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Effect of hydrogen on the electrical characteristics of structural elements of the Pt/WO/6 H-SiC.
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- Semiconductors, 2015, v. 49, n. 9, p. 1226, doi. 10.1134/S1063782615090262
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Effect of catalytic surface modification on the gas sensitivity of SnO + 3% SiO films.
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- Semiconductors, 2015, v. 49, n. 9, p. 1237, doi. 10.1134/S1063782615090249
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Characterization of field-emission cathodes based on graphene films on SiC.
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- Semiconductors, 2015, v. 49, n. 9, p. 1242, doi. 10.1134/S1063782615090146
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Photodetectors based on single-walled carbon nanotubes and thiamonomethinecyanine J-aggregates on flexible substrates.
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- Semiconductors, 2015, v. 49, n. 9, p. 1246, doi. 10.1134/S1063782615090092
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Laser interferometric method for determining the carrier diffusion length in semiconductors.
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- Semiconductors, 2015, v. 49, n. 9, p. 1119, doi. 10.1134/S1063782615090201
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