Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 5
Results: 26
Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands.
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- Semiconductors, 2015, v. 49, n. 5, p. 570, doi. 10.1134/S1063782615050255
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Electron scattering in the Δ model of the conduction band of germanium single crystals.
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- Semiconductors, 2015, v. 49, n. 5, p. 574, doi. 10.1134/S1063782615050140
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GaInP semiconductor compounds doped with the Sb isovalent impurity.
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- Semiconductors, 2015, v. 49, n. 5, p. 579, doi. 10.1134/S1063782615050231
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Temperature dependence of the band gap of CuZnSnS single crystals.
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- Semiconductors, 2015, v. 49, n. 5, p. 582, doi. 10.1134/S106378261505005X
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Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H ions.
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- Semiconductors, 2015, v. 49, n. 5, p. 586, doi. 10.1134/S1063782615050073
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Light-induced relaxation of the metastable conductivity of undoped a-Si:H films illuminated at elevated temperatures.
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- Semiconductors, 2015, v. 49, n. 5, p. 590, doi. 10.1134/S1063782615050127
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Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm.
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- Semiconductors, 2015, v. 49, n. 5, p. 593, doi. 10.1134/S1063782615050048
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Photoelectric properties of n-ITO/ p-GaTe heterojunctions.
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- Semiconductors, 2015, v. 49, n. 5, p. 600, doi. 10.1134/S1063782615050085
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Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAsSb/AlSb quantum wells.
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- Semiconductors, 2015, v. 49, n. 5, p. 604, doi. 10.1134/S106378261505019X
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On the density of states of disordered epitaxial graphene.
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- Semiconductors, 2015, v. 49, n. 5, p. 615, doi. 10.1134/S1063782615050061
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Simulation of radiation-defect formation processes in heterostructures with self-assembled Ge(Si)/Si(001) nanoislands under neutron irradiation.
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- Semiconductors, 2015, v. 49, n. 5, p. 621, doi. 10.1134/S1063782615050243
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Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals.
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- Semiconductors, 2015, v. 49, n. 5, p. 625, doi. 10.1134/S1063782615050206
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Ion implantation of erbium into polycrystalline cadmium telluride.
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- Semiconductors, 2015, v. 49, n. 5, p. 630, doi. 10.1134/S1063782615050267
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Geometrization of the dynamic structure of the transient photoresponse from zinc chalcogenides.
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- Semiconductors, 2015, v. 49, n. 5, p. 634, doi. 10.1134/S1063782615050152
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Photoluminescence of GaAs/AlGaAs quantum ring arrays.
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- Semiconductors, 2015, v. 49, n. 5, p. 638, doi. 10.1134/S106378261505022X
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Optical phonons in PbTe/CdTe multilayer heterostructures.
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- Semiconductors, 2015, v. 49, n. 5, p. 644, doi. 10.1134/S1063782615050176
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Silicon vacancy-related centers in non-irradiated 6 H-SiC nanostructure.
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- Semiconductors, 2015, v. 49, n. 5, p. 649, doi. 10.1134/S1063782615050036
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Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films.
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- Semiconductors, 2015, v. 49, n. 5, p. 658, doi. 10.1134/S1063782615050115
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Effect of electromagnetic radiation on an array of noninteracting carbon nanoribbons in the presence of nanosecond electrical pulses.
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- Semiconductors, 2015, v. 49, n. 5, p. 663, doi. 10.1134/S1063782615050218
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Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.
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- Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164
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Thermal resistance of ultra-small-diameter disk microlasers.
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- Semiconductors, 2015, v. 49, n. 5, p. 674, doi. 10.1134/S1063782615050279
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Flexible photovoltaic modules based on amorphous hydrogenated silicon.
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- Semiconductors, 2015, v. 49, n. 5, p. 679, doi. 10.1134/S1063782615050024
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Simulation of the natural characteristics of vertical a-Si:H/μ c-Si:H tandem solar cells. 1. General relations.
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- Semiconductors, 2015, v. 49, n. 5, p. 683, doi. 10.1134/S1063782615050097
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Simulation of the natural characteristics of vertical a-Si:H/μ c-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment.
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- Semiconductors, 2015, v. 49, n. 5, p. 693, doi. 10.1134/S1063782615050103
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Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures.
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- Semiconductors, 2015, v. 49, n. 5, p. 700, doi. 10.1134/S1063782615050139
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Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of VO thin films.
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- Semiconductors, 2015, v. 49, n. 5, p. 563, doi. 10.1134/S1063782615050188
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