Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 5

Results: 26

On the density of states of disordered epitaxial graphene.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 615, doi. 10.1134/S1063782615050061

By:

Davydov, S.

Publication type:

Article

Light-induced relaxation of the metastable conductivity of undoped a-Si:H films illuminated at elevated temperatures.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 590, doi. 10.1134/S1063782615050127

By:

Kurova, I.;
Ormont, N.

Publication type:

Article

Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 593, doi. 10.1134/S1063782615050048

By:

Ben Nasr, A.;
Habchi, M.;
Bilel, C.;
Rebey, A.;
El Jani, B.

Publication type:

Article

Photoelectric properties of n-ITO/ p-GaTe heterojunctions.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 600, doi. 10.1134/S1063782615050085

By:

Katerynchuk, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 570, doi. 10.1134/S1063782615050255

By:

Sobolev, V.;
Perevoshchikov, D.

Publication type:

Article

Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAsSb/AlSb quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 604, doi. 10.1134/S106378261505019X

By:

Pavlov, N.;
Zegrya, G.

Publication type:

Article

Electron scattering in the Δ model of the conduction band of germanium single crystals.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 574, doi. 10.1134/S1063782615050140

By:

Luniov, S.;
Burban, O.;
Nazarchuk, P.

Publication type:

Article

GaInP semiconductor compounds doped with the Sb isovalent impurity.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 579, doi. 10.1134/S1063782615050231

By:

Skachkov, A.

Publication type:

Article

Temperature dependence of the band gap of CuZnSnS single crystals.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 582, doi. 10.1134/S106378261505005X

By:

Bodnar, I.

Publication type:

Article

Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H ions.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 586, doi. 10.1134/S1063782615050073

By:

Garibov, A.;
Madatov, R.;
Komarov, F.;
Pilko, V.;
Mustafayev, Yu.;
Akhmedov, F.;
Jakhangirov, M.

Publication type:

Article

Flexible photovoltaic modules based on amorphous hydrogenated silicon.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 679, doi. 10.1134/S1063782615050024

By:

Ablayev, G.;
Abramov, A.;
Nyapshaev, I.;
Vygranenko, Y.;
Yang, R.;
Sazonov, A.;
Shvarts, M.;
Terukov, E.

Publication type:

Article

Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of VO thin films.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 563, doi. 10.1134/S1063782615050188

By:

Novodvorsky, O.;
Parshina, L.;
Khramova, O.;
Mikhalevsky, V.;
Shcherbachev, K.;
Panchenko, V.

Publication type:

Article

Photoluminescence of GaAs/AlGaAs quantum ring arrays.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 638, doi. 10.1134/S106378261505022X

By:

Sibirmovskii, Yu.;
Vasil'evskii, I.;
Vinichenko, A.;
Eremin, I.;
Zhigunov, D.;
Kargin, N.;
Kolentsova, O.;
Martyuk, P.;
Strikhanov, M.

Publication type:

Article

Simulation of radiation-defect formation processes in heterostructures with self-assembled Ge(Si)/Si(001) nanoislands under neutron irradiation.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 621, doi. 10.1134/S1063782615050243

By:

Skupov, A.

Publication type:

Article

Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 625, doi. 10.1134/S1063782615050206

By:

Pavlyk, B.;
Lys, R.;
Didyk, R.;
Shykorjak, J.

Publication type:

Article

Ion implantation of erbium into polycrystalline cadmium telluride.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 630, doi. 10.1134/S1063782615050267

By:

Ushakov, V.;
Klevkov, Yu.;
Dravin, V.

Publication type:

Article

Geometrization of the dynamic structure of the transient photoresponse from zinc chalcogenides.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 634, doi. 10.1134/S1063782615050152

By:

Mygal, V.;
But, A.;
Phomin, A.;
Klimenko, I.

Publication type:

Article

Optical phonons in PbTe/CdTe multilayer heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 644, doi. 10.1134/S1063782615050176

By:

Novikova, N.;
Yakovlev, V.;
Kucherenko, I.;
Karczewski, G.;
Aleshchenko, Yu.;
Muratov, A.;
Zavaritskaya, T.;
Melnik, N.

Publication type:

Article

Thermal resistance of ultra-small-diameter disk microlasers.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 674, doi. 10.1134/S1063782615050279

By:

Zhukov, A.;
Kryzhanovskaya, N.;
Maximov, M.;
Lipovskii, A.;
Savelyev, A.;
Shostak, I.;
Moiseev, E.;
Kudashova, Yu.;
Kulagina, M.;
Troshkov, S.

Publication type:

Article

Silicon vacancy-related centers in non-irradiated 6 H-SiC nanostructure.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 649, doi. 10.1134/S1063782615050036

By:

Bagraev, N.;
Danilovskii, E.;
Gets, D.;
Kalabukhova, E.;
Klyachkin, L.;
Koudryavtsev, A.;
Malyarenko, A.;
Mashkov, V.;
Savchenko, D.;
Shanina, B.

Publication type:

Article

Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 658, doi. 10.1134/S1063782615050115

By:

Kurdyukov, D.;
Shishkin, I.;
Grudinkin, S.;
Sitnikova, A.;
Zamoryanskaya, M.;
Golubev, V.

Publication type:

Article

Effect of electromagnetic radiation on an array of noninteracting carbon nanoribbons in the presence of nanosecond electrical pulses.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 663, doi. 10.1134/S1063782615050218

By:

Sadykov, N.;
Belonenko, M.;
Peshkov, D.

Publication type:

Article

Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164

By:

Mintairov, M.;
Evstropov, V.;
Mintairov, S.;
Shvarts, M.;
Timoshina, N.;
Kalyuzhnyy, N.

Publication type:

Article

Simulation of the natural characteristics of vertical a-Si:H/μ c-Si:H tandem solar cells. 1. General relations.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 683, doi. 10.1134/S1063782615050097

By:

Kryuchenko, Yu.;
Sachenko, A.;
Bobyl, A.;
Kostylyov, V.;
Terukov, E.;
Abramov, A.;
Mal'chukova, E.;
Sokolovskyi, I.

Publication type:

Article

Simulation of the natural characteristics of vertical a-Si:H/μ c-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 693, doi. 10.1134/S1063782615050103

By:

Kryuchenko, Yu.;
Sachenko, A.;
Bobyl, A.;
Kostylyov, V.;
Terukov, E.;
Abramov, A.;
Verbitskiy, V.;
Emtsev, K.;
Kudryashov, S.;
Sokolovskyi, I.

Publication type:

Article

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 700, doi. 10.1134/S1063782615050139

By:

Levin, R.;
Marichev, A.;
Shvarts, M.;
Marukhina, E.;
Khvostikov, V.;
Pushnyi, B.;
Mizerov, M.;
Andreev, V.

Publication type:

Article