Electroluminescent 1.5-μm light-emitting diodes based on p-Si/NC β-FeSi/ n-Si structures.
- Published in:
- Semiconductors, 2015, v. 49, n. 4, p. 508, doi. 10.1134/S1063782615040211
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 4
Results: 25
1
2
On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter.
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- Semiconductors, 2015, v. 49, n. 4, p. 423, doi. 10.1134/S106378261504017X
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- Article
3
Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods.
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- Semiconductors, 2015, v. 49, n. 4, p. 456, doi. 10.1134/S106378261504003X
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- Article
4
Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide.
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- Semiconductors, 2015, v. 49, n. 4, p. 472, doi. 10.1134/S1063782615040120
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- Publication type:
- Article
5
Photoluminescence of heterostructures with GaPN and GaPNAs layers grown on GaP and Si substrates by molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 4, p. 479, doi. 10.1134/S1063782615040144
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- Publication type:
- Article
6
Low-temperature conductivity in CuGaS single crystals.
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- Semiconductors, 2015, v. 49, n. 4, p. 428, doi. 10.1134/S1063782615040028
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- Publication type:
- Article
7
Development of a differential method for analyzing the luminescence spectra of semiconductors.
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- Semiconductors, 2015, v. 49, n. 4, p. 452, doi. 10.1134/S1063782615040090
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- Publication type:
- Article
8
Temperature dependence of the carrier lifetime in CdHgTe narrow-gap solid solutions with consideration for Auger processes.
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- Semiconductors, 2015, v. 49, n. 4, p. 432, doi. 10.1134/S1063782615040065
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- Publication type:
- Article
9
Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms.
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- Semiconductors, 2015, v. 49, n. 4, p. 437, doi. 10.1134/S1063782615040156
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- Article
10
Surface plasmon polaritons in a composite system of porous silicon and gold.
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- Semiconductors, 2015, v. 49, n. 4, p. 442, doi. 10.1134/S1063782615040260
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- Publication type:
- Article
11
Energy transfer from Tb to Eu in GaS:(Eu, Tb) crystals.
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- Semiconductors, 2015, v. 49, n. 4, p. 448, doi. 10.1134/S1063782615040247
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- Publication type:
- Article
12
Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals.
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- Semiconductors, 2015, v. 49, n. 4, p. 492, doi. 10.1134/S1063782615040107
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- Publication type:
- Article
13
Plasma waves in a graphene-based superlattice in the presence of a high static electric field.
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- Semiconductors, 2015, v. 49, n. 4, p. 504, doi. 10.1134/S1063782615040119
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- Publication type:
- Article
14
Temperature dependences of the contact resistivity in ohmic contacts to n-InN.
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- Semiconductors, 2015, v. 49, n. 4, p. 461, doi. 10.1134/S1063782615040193
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- Publication type:
- Article
15
Formation of S 'quasi-molecules' in sulfur-doped silicon.
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- Semiconductors, 2015, v. 49, n. 4, p. 421, doi. 10.1134/S1063782615040223
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- Publication type:
- Article
16
Quantum Hall effect in semiconductor systems with quantum dots and antidots.
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- Semiconductors, 2015, v. 49, n. 4, p. 483, doi. 10.1134/S1063782615040077
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- Publication type:
- Article
17
Conditions of steady switching in phase-transition memory cells.
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- Semiconductors, 2015, v. 49, n. 4, p. 498, doi. 10.1134/S1063782615040181
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- Publication type:
- Article
18
A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT.
- Published in:
- Semiconductors, 2015, v. 49, n. 4, p. 513, doi. 10.1134/S1063782615040168
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- Publication type:
- Article
19
Admittance spectroscopy of solar cells based on GaPNAs layers.
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- Semiconductors, 2015, v. 49, n. 4, p. 524, doi. 10.1134/S1063782615040053
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- Publication type:
- Article
20
Surface-barrier photoconverters with graded-gap layers in the space-charge region.
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- Semiconductors, 2015, v. 49, n. 4, p. 519, doi. 10.1134/S1063782615040089
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- Publication type:
- Article
21
Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors.
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- Semiconductors, 2015, v. 49, n. 4, p. 529, doi. 10.1134/S1063782615040259
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- Publication type:
- Article
22
Irradiation of 4 H-SiC UV detectors with heavy ions.
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- Semiconductors, 2015, v. 49, n. 4, p. 540, doi. 10.1134/S1063782615040132
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- Publication type:
- Article
23
Liquid-phase epitaxy of the (Si)(Ge)(GaAs) substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties.
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- Semiconductors, 2015, v. 49, n. 4, p. 547, doi. 10.1134/S106378261504020X
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- Article
24
Anisotropic shaping of macroporous silicon.
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- Semiconductors, 2015, v. 49, n. 4, p. 551, doi. 10.1134/S1063782615040041
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- Publication type:
- Article
25
MBE growth of GaP on a Si substrate.
- Published in:
- Semiconductors, 2015, v. 49, n. 4, p. 559, doi. 10.1134/S1063782615040235
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- Publication type:
- Article