Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 3

Results: 25

Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 290, doi. 10.1134/S1063782615030185

By:

Romaka, V.;
Rogl, P.;
Kaczorowski, D.;
Stadnyk, Yu.;
Korzh, R.;
Krayovskyy, V.;
Kovbasyuk, T.

Publication type:

Article

Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150-200 K.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 285, doi. 10.1134/S1063782615030161

By:

Odrinsky, A.

Publication type:

Article

Positronics of radiation-induced effects in chalcogenide glassy semiconductors.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 298, doi. 10.1134/S1063782615030197

By:

Shpotyuk, O.;
Kozyukhin, S.;
Shpotyuk, M.;
Ingram, A.;
Szatanik, R.

Publication type:

Article

Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 305, doi. 10.1134/S1063782615030240

By:

Zakhar'in, A.;
Bobylev, A.;
Egorov, S.;
Andrianov, A.

Publication type:

Article

Investigation of surface potential in the V-defect region of MBE CdHgTe film.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 309, doi. 10.1134/S106378261503015X

By:

Novikov, V.;
Grigoryev, D.

Publication type:

Article

Optical properties of alloys based on II-S and II-Te chalcogenides.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 313, doi. 10.1134/S1063782615030124

By:

Kirovskaya, I.;
Nor, P.;
Nagibina, I.;
Karpova, E.

Publication type:

Article

On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 319, doi. 10.1134/S1063782615030239

By:

Yafarov, R.

Publication type:

Article

Effect of water and a biologically active medium on different modifications of silicon.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 325, doi. 10.1134/S1063782615030069

By:

Bilenko, D.;
Belobrovaya, O.;
Galushka, V.;
Karsakova, Ya.;
Mel'nikova, T.;
Mysenko, I.;
Polyanskaya, V.;
Terin, D.

Publication type:

Article

Molecular-beam epitaxy of heterostructures of wide-gap II-VI compounds for low-threshold lasers with optical and electron pumping.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 331, doi. 10.1134/S1063782615030215

By:

Sorokin, S.;
Gronin, S.;
Sedova, I.;
Rakhlin, M.;
Baidakova, M.;
Kop'ev, P.;
Vainilovich, A.;
Lutsenko, E.;
Yablonskii, G.;
Gamov, N.;
Zhdanova, E.;
Zverev, M.;
Ruvimov, S.;
Ivanov, S.

Publication type:

Article

Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 337, doi. 10.1134/S1063782615030136

By:

Lovygin, M.;
Borgardt, N.;
Kazakov, I.;
Seibt, M.

Publication type:

Article

Photoelectric characteristics of metal-GaO-GaAs structures.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 345, doi. 10.1134/S1063782615030100

By:

Kalygina, V.;
Vishnikina, V.;
Petrova, Yu.;
Prudaev, I.;
Yaskevich, T.

Publication type:

Article

Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 367, doi. 10.1134/S1063782615030148

By:

Mynbaev, K.;
Shilyaev, A.;
Bazhenov, N.;
Izhnin, A.;
Izhnin, I.;
Mikhailov, N.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 387, doi. 10.1134/S1063782615030082

By:

Filatov, D.;
Gorshkov, A.;
Volkova, N.;
Guseinov, D.;
Alyabina, N.;
Ivanova, M.;
Chalkov, V.;
Denisov, S.;
Shengurov, V.

Publication type:

Article

Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 358, doi. 10.1134/S1063782615030057

By:

Baidus, N.;
Vikhrova, O.;
Zvonkov, B.;
Malysheva, E.;
Trufanov, A.

Publication type:

Article

Electrical properties of Pd-oxide-InP structures.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094

By:

Grebenshchikova, E.;
Evstropov, V.;
Il'inskaya, N.;
Mel'nikov, Yu.;
Serebrennikova, O.;
Sidorov, V.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article

Optical studies of carriers' vertical transport in the alternately-strained ZnSSe/CdSe superlattice.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 352, doi. 10.1134/S1063782615030070

By:

Evropeytsev, E.;
Sorokin, S.;
Gronin, S.;
Sedova, I.;
Klimko, G.;
Ivanov, S.;
Toropov, A.

Publication type:

Article

Optical and structural properties of ensembles of colloidal AgS quantum dots in gelatin.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 373, doi. 10.1134/S1063782615030173

By:

Ovchinnikov, O.;
Smirnov, M.;
Shapiro, B.;
Shatskikh, T.;
Perepelitsa, A.;
Korolev, N.

Publication type:

Article

Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 406, doi. 10.1134/S1063782615030203

By:

Sobolev, N.;
Danilov, D.;
Aleksandrov, O.;
Loshachenko, A.;
Sakharov, V.;
Serenkov, I.;
Shek, E.;
Trapeznikova, I.

Publication type:

Article

Electrooptical properties and structural features of amorphous ITO.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 414, doi. 10.1134/S1063782615030045

By:

Amosova, L.

Publication type:

Article

Response of semiconductor nonlinear circuits to external perturbations.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 401, doi. 10.1134/S1063782615030033

By:

Aliev, K.;
Kamilov, I.;
Ibragimov, Kh.;
Abakarova, N.

Publication type:

Article

Formation of Si nanocrystals in multilayered nanoperiodic AlO/SiO/AlO/SiO/.../Si(100) structures: Synchrotron and photoluminescence data.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 409, doi. 10.1134/S1063782615030227

By:

Turishchev, S.;
Terekhov, V.;
Koyuda, D.;
Spirin, D.;
Parinova, E.;
Nesterov, D.;
Grachev, D.;
Karabanova, I.;
Ershov, A.;
Mashin, A.;
Domashevskaya, E.

Publication type:

Article

Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett technique.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 380, doi. 10.1134/S1063782615030252

By:

Zarubanov, A.;
Zhuravlev, K.

Publication type:

Article

Effect of nanoscale tin-dioxide layers on the efficiency of CdS/CdTe-based film solar elements.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 394, doi. 10.1134/S1063782615030112

By:

Khrypunov, G.;
Pirohov, O.;
Gorstka, T.;
Novikov, V.;
Kovtun, N.

Publication type:

Article

First principles calculations of structure parameters and transition pressures of GaNBi alloys.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 279, doi. 10.1134/S1063782615030021

By:

Alaya, R.;
Mbarki, M.;
Rebey, A.

Publication type:

Article

Erratum to: 'Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy'.

Published in:

2015

By:

Teterin, P.;
Averyanov, D.;
Sadofyev, Yu.;
Parfenov, O.;
Likhachev, I.;
Storchak, V.

Publication type:

Erratum